ATE449417T1 - Belichtungssystem und belichtungsverfahren - Google Patents

Belichtungssystem und belichtungsverfahren

Info

Publication number
ATE449417T1
ATE449417T1 AT04701103T AT04701103T ATE449417T1 AT E449417 T1 ATE449417 T1 AT E449417T1 AT 04701103 T AT04701103 T AT 04701103T AT 04701103 T AT04701103 T AT 04701103T AT E449417 T1 ATE449417 T1 AT E449417T1
Authority
AT
Austria
Prior art keywords
mask
optical system
image
projection
field stop
Prior art date
Application number
AT04701103T
Other languages
English (en)
Inventor
Hideki Komatsuda
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE449417T1 publication Critical patent/ATE449417T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal Substances (AREA)
AT04701103T 2003-01-10 2004-01-09 Belichtungssystem und belichtungsverfahren ATE449417T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003003868 2003-01-10
PCT/JP2004/000129 WO2004064128A1 (ja) 2003-01-10 2004-01-09 露光装置および露光方法

Publications (1)

Publication Number Publication Date
ATE449417T1 true ATE449417T1 (de) 2009-12-15

Family

ID=32708922

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04701103T ATE449417T1 (de) 2003-01-10 2004-01-09 Belichtungssystem und belichtungsverfahren

Country Status (6)

Country Link
US (1) US7023523B2 (de)
EP (1) EP1585169B1 (de)
JP (1) JP4822417B2 (de)
AT (1) ATE449417T1 (de)
DE (1) DE602004024168D1 (de)
WO (1) WO2004064128A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7312851B2 (en) * 2004-06-23 2007-12-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method in which a reflective projection optical system has a non-circular aperture stop
JP5007538B2 (ja) * 2006-08-30 2012-08-22 株式会社ニコン 露光装置、デバイスの製造方法及び露光方法
DE102008002377A1 (de) * 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem
JP5061063B2 (ja) 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光用ミラーおよび極端紫外光源装置
KR102160046B1 (ko) * 2010-04-02 2020-09-28 가부시키가이샤 니콘 조명 광학계, 노광 방법 및 디바이스 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5315629A (en) * 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5583609A (en) * 1993-04-23 1996-12-10 Nikon Corporation Projection exposure apparatus
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3057998B2 (ja) * 1994-02-16 2000-07-04 キヤノン株式会社 照明装置及びそれを用いた投影露光装置
JP3358097B2 (ja) * 1994-04-12 2002-12-16 株式会社ニコン Ｘ線投影露光装置
JP3624523B2 (ja) * 1996-03-06 2005-03-02 株式会社ニコン Ｘ線投影露光装置
JPH1092727A (ja) * 1996-09-11 1998-04-10 Canon Inc 投影露光装置
JP2000091220A (ja) * 1998-09-08 2000-03-31 Nikon Corp 投影露光装置及び投影露光方法
JP2000286191A (ja) * 1999-03-31 2000-10-13 Nikon Corp 露光装置および露光方法ならびにデバイス製造方法
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置
JP2000356855A (ja) * 1999-06-15 2000-12-26 Nikon Corp 照明領域設定装置および露光装置
JP3363882B2 (ja) * 2000-10-17 2003-01-08 株式会社日立製作所 露光装置

Also Published As

Publication number Publication date
EP1585169A4 (de) 2007-07-18
EP1585169B1 (de) 2009-11-18
WO2004064128A1 (ja) 2004-07-29
EP1585169A1 (de) 2005-10-12
JP4822417B2 (ja) 2011-11-24
DE602004024168D1 (de) 2009-12-31
JPWO2004064128A1 (ja) 2006-05-18
US7023523B2 (en) 2006-04-04
US20050264789A1 (en) 2005-12-01

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties