ATE449420T1 - Cmos bauelemente mit doppelter schicht - Google Patents

Cmos bauelemente mit doppelter schicht

Info

Publication number
ATE449420T1
ATE449420T1 AT02761307T AT02761307T ATE449420T1 AT E449420 T1 ATE449420 T1 AT E449420T1 AT 02761307 T AT02761307 T AT 02761307T AT 02761307 T AT02761307 T AT 02761307T AT E449420 T1 ATE449420 T1 AT E449420T1
Authority
AT
Austria
Prior art keywords
layer
distal
proximal
channel
double layer
Prior art date
Application number
AT02761307T
Other languages
English (en)
Inventor
Eugene Fitzgerald
Original Assignee
Amberwave Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amberwave Systems Corp filed Critical Amberwave Systems Corp
Application granted granted Critical
Publication of ATE449420T1 publication Critical patent/ATE449420T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Fats And Perfumes (AREA)
AT02761307T 2001-08-09 2002-08-09 Cmos bauelemente mit doppelter schicht ATE449420T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3118801P 2001-08-09 2001-08-09
PCT/US2002/025286 WO2003015160A2 (en) 2001-08-09 2002-08-09 Dual layer cmos devices

Publications (1)

Publication Number Publication Date
ATE449420T1 true ATE449420T1 (de) 2009-12-15

Family

ID=32092164

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02761307T ATE449420T1 (de) 2001-08-09 2002-08-09 Cmos bauelemente mit doppelter schicht

Country Status (5)

Country Link
EP (1) EP1415337B1 (de)
JP (1) JP2004538639A (de)
AT (1) ATE449420T1 (de)
DE (1) DE60234450D1 (de)
WO (1) WO2003015160A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040072738A (ko) * 2002-01-23 2004-08-18 스피나커 세미컨덕터, 인크. 변형 반도체 기판과 쇼트키 또는 쇼트키 콘택트와 유사한콘택트를 형성하는 소스 및/또는 드레인을 갖는 전계 효과트랜지스터
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
FR2868209B1 (fr) * 2004-03-25 2006-06-16 Commissariat Energie Atomique Transistor a effet de champ a canal en carbone diamant
US7244958B2 (en) * 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
KR102069275B1 (ko) 2013-06-07 2020-01-22 삼성전자주식회사 변형된 채널층을 갖는 반도체 소자 및 그 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155571A (en) * 1990-08-06 1992-10-13 The Regents Of The University Of California Complementary field effect transistors having strained superlattice structure
US5534713A (en) * 1994-05-20 1996-07-09 International Business Machines Corporation Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
JP3372158B2 (ja) * 1996-02-09 2003-01-27 株式会社東芝 半導体装置及びその製造方法
DE19720008A1 (de) * 1997-05-13 1998-11-19 Siemens Ag Integrierte CMOS-Schaltungsanordnung und Verfahren zu deren Herstellung
JP3403076B2 (ja) * 1998-06-30 2003-05-06 株式会社東芝 半導体装置及びその製造方法
JP4521542B2 (ja) * 1999-03-30 2010-08-11 ルネサスエレクトロニクス株式会社 半導体装置および半導体基板
JP2001160594A (ja) * 1999-09-20 2001-06-12 Toshiba Corp 半導体装置
US6339232B1 (en) * 1999-09-20 2002-01-15 Kabushika Kaisha Toshiba Semiconductor device
JP4226175B2 (ja) * 1999-12-10 2009-02-18 富士通株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2003015160A3 (en) 2003-12-04
DE60234450D1 (de) 2009-12-31
JP2004538639A (ja) 2004-12-24
WO2003015160A2 (en) 2003-02-20
EP1415337B1 (de) 2009-11-18
EP1415337A2 (de) 2004-05-06

Similar Documents

Publication Publication Date Title
WO2007018944A3 (en) Gate electrode structures and methods of manufacture
WO2004086458A3 (en) Electronic device including a self-assembled monolayer, and a method of fabricating the same
EP1744351A3 (de) Verfahren zur Herstellung von einem MOSFET mit vollsilizidiertem Gatter und dadurch hergestelle Bauelemente
WO2004040655A3 (en) Semiconductor component and method of manufacture
WO2007012490A3 (de) Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
WO2006025609A3 (en) Thin film transistor and its manufacturing method
TW200802811A (en) Semiconductor structure and method for forming the same
GB2453492A (en) Organic el device and manufacturing method thereof
WO2003058723A1 (fr) Transistor a film mince organique et son procede de fabrication
WO2005113033A3 (en) Medical devices and methods of making the same
TW200729570A (en) Transistor, organic semiconductor device, and method for manufacturing the transistor or device
DE60302831D1 (de) Halbleiterschalter mit isolierten MOS-Transistoren
WO2010030493A3 (en) Transistor with a passive gate and methods of fabricating the same
WO2006091823A3 (en) Electronic devices with carbon nanotube components
DE602004023774D1 (de) Leitfähige Zusammensetzung
GB2444466A (en) Self-aligned gate isolation
WO2007084811A3 (en) Embedded assembly including moveable element and antenna element
AU2003209247A1 (en) Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
EP1685789A3 (de) Endoskop mit längsgeführtem Stülpschlauch
WO2003015182A3 (de) Steg-feldeffekttransistor und verfahren zum herstellen eines steg-feldeffekttransistors
PT1553942E (pt) Composicao farmaceutica associando tenatoprazol e um anti-inflamatorio
TWI266360B (en) An integrated circuit device, microelectronic device and method of fabricating the same
DE60234450D1 (de) Cmos bauelemente mit doppelter schicht
EP1443570A3 (de) Organischer Dünnfilmtransistor mit einem Heteroübergang und einer Gatterisolationsschicht
TW200729460A (en) Semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties