ATE449427T1 - Vorrichtung - Google Patents

Vorrichtung

Info

Publication number
ATE449427T1
ATE449427T1 AT07828857T AT07828857T ATE449427T1 AT E449427 T1 ATE449427 T1 AT E449427T1 AT 07828857 T AT07828857 T AT 07828857T AT 07828857 T AT07828857 T AT 07828857T AT E449427 T1 ATE449427 T1 AT E449427T1
Authority
AT
Austria
Prior art keywords
helical
substituted polyacetylene
electrodes
pair
contraption
Prior art date
Application number
AT07828857T
Other languages
English (en)
Inventor
Takeyuki Sone
Akira Kuriyama
Koji Yano
Otto Albrecht
Masayoshi Tabata
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006261341A external-priority patent/JP5196755B2/ja
Priority claimed from JP2006261340A external-priority patent/JP5196754B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE449427T1 publication Critical patent/ATE449427T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/143Polyacetylene; Derivatives thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701Organic molecular electronic devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Bipolar Transistors (AREA)
AT07828857T 2006-09-26 2007-09-21 Vorrichtung ATE449427T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006261341A JP5196755B2 (ja) 2006-09-26 2006-09-26 デバイス
JP2006261340A JP5196754B2 (ja) 2006-09-26 2006-09-26 配向膜を用いたデバイス
PCT/JP2007/069116 WO2008047586A1 (en) 2006-09-26 2007-09-21 Device

Publications (1)

Publication Number Publication Date
ATE449427T1 true ATE449427T1 (de) 2009-12-15

Family

ID=38779713

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07828857T ATE449427T1 (de) 2006-09-26 2007-09-21 Vorrichtung

Country Status (6)

Country Link
US (1) US8450724B2 (de)
EP (1) EP2016632B1 (de)
CN (1) CN102157690A (de)
AT (1) ATE449427T1 (de)
DE (1) DE602007003340D1 (de)
WO (1) WO2008047586A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080099129A1 (en) 2006-10-27 2008-05-01 Canon Kabushiki Kaisha Method and apparatus for forming a continuous oriented structure of a polymer
JP5196815B2 (ja) * 2007-03-09 2013-05-15 キヤノン株式会社 螺旋型置換ポリアセチレン構造体、その製造方法、デバイス構造、イオン輸送膜および気体分離膜
KR101539669B1 (ko) * 2008-12-16 2015-07-27 삼성전자주식회사 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법
US8663745B2 (en) * 2010-06-04 2014-03-04 Canon Kabushiki Kaisha Film-forming method based on LB method
EP2492294A1 (de) * 2011-02-28 2012-08-29 Canon Kabushiki Kaisha Helix-Polyacetylen und Vorrichtung mit dem Helix-Polyacetylen

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3645999A (en) * 1969-10-23 1972-02-29 Mc Donnell Douglas Corp Polymeric materials
JPH01108780A (ja) 1987-10-22 1989-04-26 Seiko Epson Corp 分子素子
JPH0651757B2 (ja) 1989-01-09 1994-07-06 松下電器産業株式会社 金属化ポリアセチレン又は金属化ポリアセン型超長共役ポリマーの製造方法
JP3262472B2 (ja) 1994-04-22 2002-03-04 キヤノン株式会社 ラングミュアーブロジェット膜の製造装置
TW552592B (en) * 2001-01-23 2003-09-11 Quantum Polymer Technologies I Conductive polymer materials and methods for their manufacture and use
CN100367528C (zh) 2001-05-07 2008-02-06 先进微装置公司 具储存效应的开关装置
EP1405356B1 (de) * 2001-07-09 2013-07-31 Plastic Logic Limited Lösungsmittelbeeinflusste ausrichtung
US6806526B2 (en) * 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
JP5061414B2 (ja) * 2001-09-27 2012-10-31 東レ株式会社 薄膜トランジスタ素子
JP2003142273A (ja) 2001-11-01 2003-05-16 Nichia Chem Ind Ltd 正孔輸送材およびそれを用いた有機電界発光素子
JP2004027182A (ja) 2002-02-28 2004-01-29 Masayoshi Tabata 吸光・発光スペクトルの形状及びピーク位置が可逆的に変化するポリマー及びポリマー組成物
JP4157944B2 (ja) 2002-08-15 2008-10-01 独立行政法人産業技術総合研究所 ポリアセチレン系ポリマーのHClドーピング物、その製造方法及びそれを有する導電用材料
JP3903176B2 (ja) 2002-09-25 2007-04-11 独立行政法人産業技術総合研究所 黒色ポリアセチレン化合物の製造方法及び黄色ポリアセチレン化合物の再生方法
JP3968424B2 (ja) 2002-11-08 2007-08-29 独立行政法人産業技術総合研究所 ポリアセチレン系ポリマー、その製造方法、及びそれを有する導電用材料及び感圧材
JP4168136B2 (ja) 2002-11-11 2008-10-22 独立行政法人産業技術総合研究所 圧力センサー
JP2005072569A (ja) 2003-08-06 2005-03-17 Mitsubishi Chemicals Corp 有機電界効果トランジスタ
JP4898498B2 (ja) * 2007-03-09 2012-03-14 キヤノン株式会社 置換ポリアセチレン、複合体およびデバイス構造
JP5196815B2 (ja) * 2007-03-09 2013-05-15 キヤノン株式会社 螺旋型置換ポリアセチレン構造体、その製造方法、デバイス構造、イオン輸送膜および気体分離膜

Also Published As

Publication number Publication date
US20090179197A1 (en) 2009-07-16
EP2016632B1 (de) 2009-11-18
DE602007003340D1 (de) 2009-12-31
US8450724B2 (en) 2013-05-28
CN102157690A (zh) 2011-08-17
WO2008047586A1 (en) 2008-04-24
EP2016632A1 (de) 2009-01-21

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