ATE453213T1 - Leuchtdiode mit siliziumcarbidsubstrat - Google Patents

Leuchtdiode mit siliziumcarbidsubstrat

Info

Publication number
ATE453213T1
ATE453213T1 AT03728992T AT03728992T ATE453213T1 AT E453213 T1 ATE453213 T1 AT E453213T1 AT 03728992 T AT03728992 T AT 03728992T AT 03728992 T AT03728992 T AT 03728992T AT E453213 T1 ATE453213 T1 AT E453213T1
Authority
AT
Austria
Prior art keywords
light
bond pad
silicon carbide
carbide substrate
light diode
Prior art date
Application number
AT03728992T
Other languages
English (en)
Inventor
Heng Liu
Original Assignee
Lumei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumei Optoelectronics Corp filed Critical Lumei Optoelectronics Corp
Application granted granted Critical
Publication of ATE453213T1 publication Critical patent/ATE453213T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)
AT03728992T 2002-05-17 2003-05-19 Leuchtdiode mit siliziumcarbidsubstrat ATE453213T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/147,078 US6919585B2 (en) 2002-05-17 2002-05-17 Light-emitting diode with silicon carbide substrate
PCT/US2003/015603 WO2003098713A1 (en) 2002-05-17 2003-05-19 Light-emitting diode with silicon carbide substrate

Publications (1)

Publication Number Publication Date
ATE453213T1 true ATE453213T1 (de) 2010-01-15

Family

ID=29418948

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03728992T ATE453213T1 (de) 2002-05-17 2003-05-19 Leuchtdiode mit siliziumcarbidsubstrat

Country Status (9)

Country Link
US (1) US6919585B2 (de)
EP (1) EP1540744B1 (de)
KR (1) KR101076726B1 (de)
CN (1) CN1663055B (de)
AT (1) ATE453213T1 (de)
AU (1) AU2003233556A1 (de)
DE (1) DE60330683D1 (de)
ES (1) ES2337038T3 (de)
WO (1) WO2003098713A1 (de)

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US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US20070102692A1 (en) * 2004-07-12 2007-05-10 Hirokazu Asahara Semiconductor light emitting device
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
KR100638819B1 (ko) * 2005-05-19 2006-10-27 삼성전기주식회사 광추출효율이 개선된 수직구조 질화물 반도체 발광소자
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
US20060289891A1 (en) * 2005-06-28 2006-12-28 Hutchins Edward L Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures
KR100706952B1 (ko) * 2005-07-22 2007-04-12 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자 및 그 제조방법
US7860398B2 (en) 2005-09-15 2010-12-28 Finisar Corporation Laser drivers for closed path optical cables
US7876989B2 (en) 2006-04-10 2011-01-25 Finisar Corporation Active optical cable with integrated power
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US20080197378A1 (en) * 2007-02-20 2008-08-21 Hua-Shuang Kong Group III Nitride Diodes on Low Index Carrier Substrates
US8769171B2 (en) 2007-04-06 2014-07-01 Finisar Corporation Electrical device with electrical interface that is compatible with integrated optical cable receptacle
US8244124B2 (en) 2007-04-30 2012-08-14 Finisar Corporation Eye safety mechanism for use in optical cable with electrical interfaces
US8278679B2 (en) * 2008-04-29 2012-10-02 Tsmc Solid State Lighting Ltd. LED device with embedded top electrode
US20100244539A1 (en) * 2009-03-30 2010-09-30 Chris Kardassilaris Vehicle seating material with hydrographic design
CN104157776A (zh) * 2009-04-07 2014-11-19 裕星企业有限公司 一种发光二极管结构
EP2519983A4 (de) * 2009-12-30 2014-06-11 Newport Corp Led-gerätearchitektur mit neuartiger optischer beschichtung sowie herstellungsverfahren dafür
US8502192B2 (en) * 2010-01-12 2013-08-06 Varian Semiconductor Equipment Associates, Inc. LED with uniform current spreading and method of fabrication
KR101646664B1 (ko) 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
WO2012103543A2 (en) * 2011-01-28 2012-08-02 University Of South Florida Optical neuron stimulation prosthetic using sic (silicon carbide)
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KR20130011767A (ko) * 2011-07-22 2013-01-30 삼성전자주식회사 반도체 발광소자
US9419194B2 (en) 2013-08-13 2016-08-16 Palo Alto Research Center Incorporated Transparent electron blocking hole transporting layer
CN106025013A (zh) * 2016-07-28 2016-10-12 合肥彩虹蓝光科技有限公司 一种高亮度led芯片的制备方法
CN108717945B (zh) * 2018-05-24 2022-01-07 西安理工大学 一种具有NiO/SiC异质发射结的SiC光触发晶闸管

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Also Published As

Publication number Publication date
EP1540744B1 (de) 2009-12-23
HK1082594A1 (en) 2006-06-09
CN1663055A (zh) 2005-08-31
EP1540744A4 (de) 2007-02-28
EP1540744A1 (de) 2005-06-15
DE60330683D1 (de) 2010-02-04
AU2003233556A1 (en) 2003-12-02
KR101076726B1 (ko) 2011-10-27
WO2003098713A1 (en) 2003-11-27
US20030214807A1 (en) 2003-11-20
ES2337038T3 (es) 2010-04-20
US6919585B2 (en) 2005-07-19
CN1663055B (zh) 2012-05-30
KR20050039753A (ko) 2005-04-29

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