ATE453736T1 - Vorrichtun zum eintragen, einspritzen oder einsprühen einer mischung aus einem trägergas und flüssigen verbindungen und verfahren zur verwendung der vorrichtung - Google Patents

Vorrichtun zum eintragen, einspritzen oder einsprühen einer mischung aus einem trägergas und flüssigen verbindungen und verfahren zur verwendung der vorrichtung

Info

Publication number
ATE453736T1
ATE453736T1 AT07728267T AT07728267T ATE453736T1 AT E453736 T1 ATE453736 T1 AT E453736T1 AT 07728267 T AT07728267 T AT 07728267T AT 07728267 T AT07728267 T AT 07728267T AT E453736 T1 ATE453736 T1 AT E453736T1
Authority
AT
Austria
Prior art keywords
unit
liquid
inlet
flow rate
compound
Prior art date
Application number
AT07728267T
Other languages
English (en)
Inventor
Herve Guillon
Samuel Bonnafous
Jean Manuel Decams
Frederic Poignant
Original Assignee
Kemstream
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kemstream filed Critical Kemstream
Application granted granted Critical
Publication of ATE453736T1 publication Critical patent/ATE453736T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/30—Injector mixers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
    • B05B7/26—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Accessories For Mixers (AREA)
  • Nozzles (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Colloid Chemistry (AREA)
AT07728267T 2006-04-19 2007-04-18 Vorrichtun zum eintragen, einspritzen oder einsprühen einer mischung aus einem trägergas und flüssigen verbindungen und verfahren zur verwendung der vorrichtung ATE453736T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0651378A FR2900070B1 (fr) 2006-04-19 2006-04-19 Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif.
US81052906P 2006-06-01 2006-06-01
PCT/EP2007/053805 WO2007118898A1 (en) 2006-04-19 2007-04-18 Device for introducing, injecting or spraying a mixture of a carrier gas and liquid compounds and method for implementing said device

Publications (1)

Publication Number Publication Date
ATE453736T1 true ATE453736T1 (de) 2010-01-15

Family

ID=37685792

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07728267T ATE453736T1 (de) 2006-04-19 2007-04-18 Vorrichtun zum eintragen, einspritzen oder einsprühen einer mischung aus einem trägergas und flüssigen verbindungen und verfahren zur verwendung der vorrichtung

Country Status (9)

Country Link
US (2) US8584965B2 (de)
EP (1) EP2016206B1 (de)
JP (1) JP5174805B2 (de)
KR (1) KR101439339B1 (de)
CN (1) CN101466868B (de)
AT (1) ATE453736T1 (de)
DE (1) DE602007004101D1 (de)
FR (1) FR2900070B1 (de)
WO (1) WO2007118898A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007038278B4 (de) * 2007-08-08 2013-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Stofftransport und Ereigniskontrolle in Systemen mit piezoelektrisch aktivierter Tröpfchenemission und Kombinationsmöglichkeiten von Trägermatrix und zu dosierendem Stoff
DE102009023010A1 (de) * 2009-05-28 2010-12-02 Ruhr Oel Gmbh Vorrichtung zum gleichzeitigen Verdampfen und Dosieren einer verdampfbaren Flüssigkeit und zugehöriges Verfahren
DE102011051261A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
US9243325B2 (en) * 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US9498758B2 (en) * 2012-07-30 2016-11-22 Biosafe Systems Llc Dilution apparatus
KR101447890B1 (ko) * 2013-07-11 2014-10-08 주식회사 펨빅스 고상파우더 코팅장치 및 코팅방법
CN105555414B (zh) * 2013-07-11 2017-09-22 株式公司品维斯 固相粉末涂敷装置及涂敷方法
WO2015021498A1 (en) * 2013-08-13 2015-02-19 Breville Pty Limited Carbonator
CN103411779B (zh) * 2013-08-28 2016-01-13 天津大学 一种用于空气净化器性能检测的气态污染物发生装置及方法
JP6647202B2 (ja) * 2013-12-06 2020-02-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積アレンジメント、堆積装置、及びこれらの操作方法
CN104155132B (zh) * 2014-07-30 2016-09-07 天津大学 一种用于空气过滤器测试系统的气态有机污染物发生器
JP2017010408A (ja) * 2015-06-24 2017-01-12 富士通株式会社 冷却装置及び電子機器システム
CN107431015B (zh) * 2015-11-10 2021-11-12 东京毅力科创株式会社 气化器、成膜装置和温度控制方法
KR101748439B1 (ko) * 2016-02-29 2017-06-16 주식회사 미래와도전 고온 고압에서 작동하는 에어로졸 생성 및 혼합 시스템p
EP3275839A1 (de) 2016-07-27 2018-01-31 Centre National De La Recherche Scientifique Verfahren zur herstellung von nanopartikeln
DE102017102446A1 (de) 2016-09-15 2018-03-15 Netzsch - Gerätebau Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zur Erzeugung eines kontinuierlichen Trägergas/Dampf-Gemisch-Stromes
CN106582453B (zh) * 2017-01-18 2022-09-09 浙江大学 包含可凝结颗粒物气体的发生装置及方法
US11022987B2 (en) * 2017-07-21 2021-06-01 Carlisle Fluid Technologies, Inc. Systems and methods for improved control of impingement mixing
KR20190015813A (ko) * 2017-08-07 2019-02-15 박명선 정유를 혼합분무하는 분무장치
US10987475B2 (en) * 2017-10-25 2021-04-27 General Electric Company Systems for feedback control of anesthetic agent concentration
US11413556B2 (en) * 2018-11-29 2022-08-16 Tsi Incorporated Reducing or eliminating liquid de-gassing
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
FR3114588B1 (fr) 2020-09-29 2023-08-11 Safran Ceram Procédé de fabrication d’une barrière environnementale
US11459654B2 (en) * 2020-11-19 2022-10-04 Eugenus, Inc. Liquid precursor injection for thin film deposition
JP7504018B2 (ja) * 2020-12-22 2024-06-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
CN115637421A (zh) * 2022-11-09 2023-01-24 拓荆科技股份有限公司 前驱体混合注入系统、半导体处理设备及前驱体控制方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69430196T2 (de) * 1993-06-29 2002-10-31 Ponwell Enterprises Ltd., Hongkong Spender
FR2707671B1 (fr) 1993-07-12 1995-09-15 Centre Nat Rech Scient Procédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt chimique en phase vapeur.
US6280793B1 (en) 1996-11-20 2001-08-28 Micron Technology, Inc. Electrostatic method and apparatus for vaporizing precursors and system for using same
US6074487A (en) 1997-02-13 2000-06-13 Shimadzu Corporation Unit for vaporizing liquid materials
WO1998055668A1 (en) * 1997-06-02 1998-12-10 Msp Corporation Method and apparatus for vapor generation and film deposition
JPH11312649A (ja) 1998-04-30 1999-11-09 Nippon Asm Kk Ｃｖｄ装置
US6314979B1 (en) * 1999-03-16 2001-11-13 Fertigator, Inc. Liquid injection apparatus and method for horticultural watering systems
JP3823591B2 (ja) 1999-03-25 2006-09-20 三菱電機株式会社 Ｃｖｄ原料用気化装置およびこれを用いたｃｖｄ装置
FR2800754B1 (fr) 1999-11-08 2003-05-09 Joint Industrial Processors For Electronics Dispositif evaporateur d'une installation de depot chimique en phase vapeur
US7163197B2 (en) * 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP3975352B2 (ja) * 2002-10-30 2007-09-12 株式会社デンソー 噴射装置の動的流量調整方法
JP4202856B2 (ja) 2003-07-25 2008-12-24 東京エレクトロン株式会社 ガス反応装置
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
JP4590881B2 (ja) * 2004-02-13 2010-12-01 株式会社ユーテック Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置
FR2874028B1 (fr) 2004-08-06 2006-10-27 Qualiflow Sa Sa Dispositif d'introduction dans une enceinte de precurseurs liquides en mode pulse avec mesure et controle du debit
JP3896594B2 (ja) * 2004-10-01 2007-03-22 株式会社ユーテック Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法

Also Published As

Publication number Publication date
JP5174805B2 (ja) 2013-04-03
CN101466868A (zh) 2009-06-24
US8584965B2 (en) 2013-11-19
US20090078791A1 (en) 2009-03-26
EP2016206A1 (de) 2009-01-21
US9387447B2 (en) 2016-07-12
CN101466868B (zh) 2013-03-27
JP2009534528A (ja) 2009-09-24
FR2900070B1 (fr) 2008-07-11
KR101439339B1 (ko) 2014-09-11
WO2007118898A1 (en) 2007-10-25
FR2900070A1 (fr) 2007-10-26
US20140034751A1 (en) 2014-02-06
KR20080110725A (ko) 2008-12-19
EP2016206B1 (de) 2009-12-30
DE602007004101D1 (de) 2010-02-11

Similar Documents

Publication Publication Date Title
ATE453736T1 (de) Vorrichtun zum eintragen, einspritzen oder einsprühen einer mischung aus einem trägergas und flüssigen verbindungen und verfahren zur verwendung der vorrichtung
US8459012B2 (en) Method for purging a dosing system
ATE554848T1 (de) Sprühdüsenverteiler und verfahren zum abschrecken eines heissen gases unter verwendung einer derartigen anordnung
JP5728387B2 (ja) 霧状流体を噴射するための方法及び装置
US5400971A (en) Side injected plural component spray gun
ATE519022T1 (de) Verfahren zur dosierung des reagens
DE602006017449D1 (de) Fluiddosiervorrichtung
DK1718413T3 (da) Fremgangsmåde og apparat til frembringelse af en låge
RU2013102962A (ru) Система подачи топлива газовой турбины и способы смены типа топлива, подаваемого в камеры сгорания газовой турбины
RU2008136860A (ru) Горелка газовой турбины и способ смешивания топлива и воздуха в зоне закручивания горелки газовой турбины
CN202100308U (zh) 一种用于尿素溶液计量喷射的scr系统
UA107067C2 (uk) Спосіб і форсунка для розпилення рідини
ATE446810T1 (de) Verfahren und einspritzdüse zum durchsetzen einer gasströmung mit flüssigkeitströpfchen
UA39989C2 (uk) Спосіб інжекції рідини і форсунка для інжекції рідини
JP2009517542A5 (de)
KR101431290B1 (ko) 액체재료 기화장치
RU2015106316A (ru) Устройство и способ управления форсункой системы последующей обработки отработавших газов
DE602004008662D1 (de) Speisedüsenanordnunng
KR102550063B1 (ko) 선택적 촉매 환원 시스템
DK2189633T3 (da) Indretning til udledning af urinstofopløsning til en udstødningsgasledning
US20150093315A1 (en) Tunable AIG for Improved SCR Performance
ATE380599T1 (de) Verfahren zum kaltgasspritzen und kaltgasspritzpistole mit erhöhter verweildauer des pulvers im gasstrahl
RU2014112314A (ru) Способ управления камерой сгорания и камера сгорания
RU183921U1 (ru) Система питания газодизельного двигателя
Larsson et al. A droplet size investigation and comparison using a novel biomimetic flash-boiling injector for AdBlue injections

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties