ATE456155T1 - Feldeffekttransistor-halbleiterbauelement - Google Patents

Feldeffekttransistor-halbleiterbauelement

Info

Publication number
ATE456155T1
ATE456155T1 AT02781506T AT02781506T ATE456155T1 AT E456155 T1 ATE456155 T1 AT E456155T1 AT 02781506 T AT02781506 T AT 02781506T AT 02781506 T AT02781506 T AT 02781506T AT E456155 T1 ATE456155 T1 AT E456155T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
semiconductor component
transistor semiconductor
component
Prior art date
Application number
AT02781506T
Other languages
English (en)
Inventor
Raymond Hueting
Jan Slotboom
Petrus Magnee
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0221839A external-priority patent/GB0221839D0/en
Application filed by Nxp Bv filed Critical Nxp Bv
Priority claimed from PCT/IB2002/004759 external-priority patent/WO2003043089A1/en
Application granted granted Critical
Publication of ATE456155T1 publication Critical patent/ATE456155T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
AT02781506T 2001-11-16 2002-11-13 Feldeffekttransistor-halbleiterbauelement ATE456155T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB0127479.4A GB0127479D0 (en) 2001-11-16 2001-11-16 Trench-gate semiconductor devices and the manufacture thereof
GBGB0130019.3A GB0130019D0 (en) 2001-11-16 2001-12-17 Trench-gate semiconductor devices and the manufacture thereof
GB0221839A GB0221839D0 (en) 2001-11-16 2002-09-20 A field effect transistor semiconductor device
PCT/IB2002/004759 WO2003043089A1 (en) 2001-11-16 2002-11-13 A field effect transistor semiconductor device

Publications (1)

Publication Number Publication Date
ATE456155T1 true ATE456155T1 (de) 2010-02-15

Family

ID=9925865

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02781506T ATE456155T1 (de) 2001-11-16 2002-11-13 Feldeffekttransistor-halbleiterbauelement

Country Status (4)

Country Link
KR (2) KR20040065560A (de)
AT (1) ATE456155T1 (de)
DE (1) DE60235187D1 (de)
GB (2) GB0127479D0 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP5128100B2 (ja) * 2006-09-29 2013-01-23 三菱電機株式会社 電力用半導体装置
US7994573B2 (en) 2007-12-14 2011-08-09 Fairchild Semiconductor Corporation Structure and method for forming power devices with carbon-containing region
KR102053354B1 (ko) * 2013-07-17 2019-12-06 삼성전자주식회사 매립 채널 어레이를 갖는 반도체 소자 및 그 제조 방법

Also Published As

Publication number Publication date
KR20040065224A (ko) 2004-07-21
KR20040065560A (ko) 2004-07-22
DE60235187D1 (de) 2010-03-11
GB0130019D0 (en) 2002-02-06
GB0127479D0 (en) 2002-01-09

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties