ATE458211T1 - Oximderivate und ihre verwendung als latente saüre - Google Patents

Oximderivate und ihre verwendung als latente saüre

Info

Publication number
ATE458211T1
ATE458211T1 AT01985295T AT01985295T ATE458211T1 AT E458211 T1 ATE458211 T1 AT E458211T1 AT 01985295 T AT01985295 T AT 01985295T AT 01985295 T AT01985295 T AT 01985295T AT E458211 T1 ATE458211 T1 AT E458211T1
Authority
AT
Austria
Prior art keywords
sub
alkylene
substituted
halogen
bond
Prior art date
Application number
AT01985295T
Other languages
English (en)
Inventor
Hitoshi Yamato
Toshikage Asakura
Akira Matsumoto
Masaki Ohwa
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Application granted granted Critical
Publication of ATE458211T1 publication Critical patent/ATE458211T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Nitrogen- Or Sulfur-Containing Heterocyclic Ring Compounds With Rings Of Six Or More Members (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Hydrogenated Pyridines (AREA)
  • Materials For Photolithography (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
AT01985295T 2000-09-25 2001-09-18 Oximderivate und ihre verwendung als latente saüre ATE458211T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00810879 2000-09-25
PCT/EP2001/010784 WO2002025376A2 (en) 2000-09-25 2001-09-18 Oxime derivatives and the use thereof as latent acids

Publications (1)

Publication Number Publication Date
ATE458211T1 true ATE458211T1 (de) 2010-03-15

Family

ID=8174933

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01985295T ATE458211T1 (de) 2000-09-25 2001-09-18 Oximderivate und ihre verwendung als latente saüre

Country Status (11)

Country Link
US (2) US6986981B2 (de)
EP (1) EP1320785B1 (de)
JP (1) JP4620325B2 (de)
KR (1) KR100785758B1 (de)
AT (1) ATE458211T1 (de)
AU (1) AU2002221606A1 (de)
BR (1) BR0114136A (de)
CA (1) CA2421206A1 (de)
DE (1) DE60141339D1 (de)
TW (1) TWI272451B (de)
WO (1) WO2002025376A2 (de)

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EP1395615B1 (de) * 2001-06-11 2009-10-21 Basf Se Oxim ester photoinitiatoren mit kombinierter struktur
US6824954B2 (en) * 2001-08-23 2004-11-30 Jsr Corporation Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same
US6716505B2 (en) 2001-08-31 2004-04-06 General Electric Company Storage medium for data with improved dimensional stability
JP3810309B2 (ja) * 2001-12-03 2006-08-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
KR20040089607A (ko) * 2002-02-06 2004-10-21 시바 스페셜티 케미칼스 홀딩 인크. 설포네이트 유도체 및 잠산으로서의 이의 용도
WO2004074242A2 (en) * 2003-02-19 2004-09-02 Ciba Specialty Chemicals Holding Inc. Halogenated oxime derivatives and the use thereof as latent acids
US20040259975A1 (en) * 2003-06-18 2004-12-23 Robillard Jean J. System and method for forming photobleachable ink compositions
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
WO2006008250A2 (en) * 2004-07-20 2006-01-26 Ciba Specialty Chemicals Holding Inc. Oxime derivatives and the use therof as latent acids
US20070077452A1 (en) * 2005-10-04 2007-04-05 Jie Liu Organic light emitting devices having latent activated layers and methods of fabricating the same
US7396482B2 (en) * 2005-10-28 2008-07-08 Infineon Technologies Ag Post exposure resist bake
KR100814231B1 (ko) * 2005-12-01 2008-03-17 주식회사 엘지화학 옥심 에스테르를 포함하는 트리아진계 광활성 화합물을포함하는 투명한 감광성 조성물
US20070176167A1 (en) * 2006-01-27 2007-08-02 General Electric Company Method of making organic light emitting devices
TWI406840B (zh) * 2006-02-24 2013-09-01 Fujifilm Corp 肟衍生物、光聚合性組成物、彩色濾光片及其製法
US8293436B2 (en) * 2006-02-24 2012-10-23 Fujifilm Corporation Oxime derivative, photopolymerizable composition, color filter, and process for producing the same
JP4548617B2 (ja) * 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
KR20090023720A (ko) * 2006-06-20 2009-03-05 시바 홀딩 인크 옥심 설포네이트 및 잠산으로서의 이의 용도
EP1967904A1 (de) 2007-03-06 2008-09-10 FUJIFILM Corporation Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
US8466096B2 (en) 2007-04-26 2013-06-18 Afton Chemical Corporation 1,3,2-dioxaphosphorinane, 2-sulfide derivatives for use as anti-wear additives in lubricant compositions
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
US9034556B2 (en) 2007-12-21 2015-05-19 Tokyo Ohka Kogyo Co., Ltd. Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern
JP5484671B2 (ja) * 2007-12-21 2014-05-07 東京応化工業株式会社 新規な化合物およびその製造方法
TW201016651A (en) * 2008-07-28 2010-05-01 Sumitomo Chemical Co Oxime compound and resist composition containing the same
US8205941B2 (en) * 2008-07-30 2012-06-26 Trw Vehicle Safety Systems Inc. Active head restraint for a vehicle seat
JP4344400B1 (ja) * 2009-02-16 2009-10-14 株式会社日本化学工業所 オキシムエステル化合物及びこれらを用いた感光性樹脂組成物
WO2010112408A1 (en) 2009-03-30 2010-10-07 Basf Se Uv-dose indicator films
KR101897842B1 (ko) 2011-01-28 2018-09-12 바스프 에스이 열 경화제로서 옥심 술포네이트를 포함하는 중합성 조성물
WO2013100411A1 (ko) * 2011-12-30 2013-07-04 제일모직 주식회사 시아누릭산 유도체, 상기 시아누릭산 유도체를 포함하는 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
KR101566532B1 (ko) 2011-12-30 2015-11-05 제일모직주식회사 시아누릭산 유도체, 상기 시아누릭산 유도체를 포함하는 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
US9955802B2 (en) 2015-04-08 2018-05-01 Fasteners For Retail, Inc. Divider with selectively securable track assembly
JP6665030B2 (ja) * 2015-05-27 2020-03-13 住友化学株式会社 化合物、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US10737984B2 (en) * 2016-11-30 2020-08-11 Hrl Laboratories, Llc Formulations and methods for 3D printing of ceramic matrix composites
CN115485310B (zh) * 2020-03-13 2025-08-12 阿莱恩技术有限公司 热固性材料中用于提高韧性的弱共价交联
CN117720483A (zh) * 2023-11-08 2024-03-19 湖北三峡实验室 一类含芳香性三氟甲肟基磺酸酯结构的光产酸剂及其制备方法和应用

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US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
EP0199672B1 (de) * 1985-04-12 1988-06-01 Ciba-Geigy Ag Oximsulfonate mit reaktiven Gruppen
DE59309494D1 (de) * 1992-05-22 1999-05-12 Ciba Geigy Ag Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3830183B2 (ja) * 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
MY117352A (en) 1995-10-31 2004-06-30 Ciba Sc Holding Ag Oximesulfonic acid esters and the use thereof as latent sulfonic acids.
US6770420B2 (en) * 1996-09-02 2004-08-03 Ciba Specialty Chemicals Corporation Alkylsulfonyloximes for high-resolution i-line photoresists of high sensitivity
SG77689A1 (en) * 1998-06-26 2001-01-16 Ciba Sc Holding Ag New o-acyloxime photoinitiators
TW575792B (en) * 1998-08-19 2004-02-11 Ciba Sc Holding Ag New unsaturated oxime derivatives and the use thereof as latent acids
NL1014545C2 (nl) * 1999-03-31 2002-02-26 Ciba Sc Holding Ag Oxim-derivaten en de toepassing daarvan als latente zuren.
SG78412A1 (en) * 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
SG97168A1 (en) * 1999-12-15 2003-07-18 Ciba Sc Holding Ag Photosensitive resin composition
WO2004074242A2 (en) * 2003-02-19 2004-09-02 Ciba Specialty Chemicals Holding Inc. Halogenated oxime derivatives and the use thereof as latent acids

Also Published As

Publication number Publication date
AU2002221606A1 (en) 2002-04-02
US6986981B2 (en) 2006-01-17
EP1320785A2 (de) 2003-06-25
WO2002025376A3 (en) 2003-03-13
TWI272451B (en) 2007-02-01
BR0114136A (pt) 2003-07-01
JP2004510189A (ja) 2004-04-02
EP1320785B1 (de) 2010-02-17
WO2002025376A2 (en) 2002-03-28
KR20040004381A (ko) 2004-01-13
KR100785758B1 (ko) 2007-12-18
US20060068325A1 (en) 2006-03-30
JP4620325B2 (ja) 2011-01-26
US20040002007A1 (en) 2004-01-01
DE60141339D1 (de) 2010-04-01
CA2421206A1 (en) 2002-03-28
US7244544B2 (en) 2007-07-17

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