ATE458278T1 - Magnetvorrichtung, die einen magnetoresistiven stapel und mindestens einen nanokontakt umfasst - Google Patents

Magnetvorrichtung, die einen magnetoresistiven stapel und mindestens einen nanokontakt umfasst

Info

Publication number
ATE458278T1
ATE458278T1 AT09356014T AT09356014T ATE458278T1 AT E458278 T1 ATE458278 T1 AT E458278T1 AT 09356014 T AT09356014 T AT 09356014T AT 09356014 T AT09356014 T AT 09356014T AT E458278 T1 ATE458278 T1 AT E458278T1
Authority
AT
Austria
Prior art keywords
nanocontact
stack
electrode
magnetorresistive
magnetic device
Prior art date
Application number
AT09356014T
Other languages
English (en)
Inventor
Veronique Sousa
Jean-Francois Nodin
Marie-Claire Cyrille
Bertrand Delaet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE458278T1 publication Critical patent/ATE458278T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
AT09356014T 2008-04-03 2009-02-19 Magnetvorrichtung, die einen magnetoresistiven stapel und mindestens einen nanokontakt umfasst ATE458278T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852236A FR2929759B1 (fr) 2008-04-03 2008-04-03 Dispositif magnetique integrant un empilement magnetoresistif

Publications (1)

Publication Number Publication Date
ATE458278T1 true ATE458278T1 (de) 2010-03-15

Family

ID=39864814

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09356014T ATE458278T1 (de) 2008-04-03 2009-02-19 Magnetvorrichtung, die einen magnetoresistiven stapel und mindestens einen nanokontakt umfasst

Country Status (6)

Country Link
US (1) US8148709B2 (de)
EP (1) EP2107623B1 (de)
JP (1) JP2009267369A (de)
AT (1) ATE458278T1 (de)
DE (1) DE602009000005D1 (de)
FR (1) FR2929759B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2939256B1 (fr) * 2008-12-01 2011-06-17 Commissariat Energie Atomique Oscillateur radiofrequence a vanne de spin ou a jonction tunnel
KR20110008553A (ko) * 2009-07-20 2011-01-27 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US8164861B2 (en) * 2009-12-11 2012-04-24 Hitachi Global Storage Technologies Netherlands B.V. Spin torque oscillator sensor employing antiparallel coupled oscilation layers
FR2969425B1 (fr) * 2010-12-16 2013-08-23 Commissariat Energie Atomique Circuit oscillant a jonctions a effet de magnétorésistance géante

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6730949B2 (en) * 2001-03-22 2004-05-04 Kabushiki Kaisha Toshiba Magnetoresistance effect device
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6963500B2 (en) * 2003-03-14 2005-11-08 Applied Spintronics Technology, Inc. Magnetic tunneling junction cell array with shared reference layer for MRAM applications
EP1548702A1 (de) * 2003-12-24 2005-06-29 Interuniversitair Microelektronica Centrum Vzw Verfahren zur superschnellen Steuerung magnetischer Zelle sowie zugehörige Vorrichtungen
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
JP4504273B2 (ja) * 2005-07-06 2010-07-14 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7635903B2 (en) * 2005-09-13 2009-12-22 Everspin Technologies, Inc. Oscillator and method of manufacture
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
FR2892871B1 (fr) * 2005-11-02 2007-11-23 Commissariat Energie Atomique Oscillateur radio frequence a courant elelctrique polarise en spin
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
FR2904724B1 (fr) * 2006-08-03 2011-03-04 Commissariat Energie Atomique Dispositif magnetique en couches minces a forte polarisation en spin perpendiculaire au plan des couches, jonction tunnel magnetique et vanne de spin mettant en oeuvre un tel dispositif
US7532506B2 (en) * 2007-09-17 2009-05-12 Qimonda Ag Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module
US7936027B2 (en) * 2008-01-07 2011-05-03 Magic Technologies, Inc. Method of MRAM fabrication with zero electrical shorting
FR2939256B1 (fr) * 2008-12-01 2011-06-17 Commissariat Energie Atomique Oscillateur radiofrequence a vanne de spin ou a jonction tunnel

Also Published As

Publication number Publication date
FR2929759B1 (fr) 2010-04-16
EP2107623A1 (de) 2009-10-07
US8148709B2 (en) 2012-04-03
JP2009267369A (ja) 2009-11-12
FR2929759A1 (fr) 2009-10-09
DE602009000005D1 (de) 2010-04-01
US20090250775A1 (en) 2009-10-08
EP2107623B1 (de) 2010-02-17

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Legal Events

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