ATE459025T1 - Widerstandsstrukturen zur elektrischen messung einer fehlanpassung in einer richtung von gehefteten masken - Google Patents

Widerstandsstrukturen zur elektrischen messung einer fehlanpassung in einer richtung von gehefteten masken

Info

Publication number
ATE459025T1
ATE459025T1 AT03775673T AT03775673T ATE459025T1 AT E459025 T1 ATE459025 T1 AT E459025T1 AT 03775673 T AT03775673 T AT 03775673T AT 03775673 T AT03775673 T AT 03775673T AT E459025 T1 ATE459025 T1 AT E459025T1
Authority
AT
Austria
Prior art keywords
resistive element
test pad
masks
stapled
electrically connected
Prior art date
Application number
AT03775673T
Other languages
English (en)
Inventor
Joseph Amato
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE459025T1 publication Critical patent/ATE459025T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70658—Electrical testing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT03775673T 2002-12-13 2003-12-04 Widerstandsstrukturen zur elektrischen messung einer fehlanpassung in einer richtung von gehefteten masken ATE459025T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43331102P 2002-12-13 2002-12-13
PCT/IB2003/005645 WO2004055599A1 (en) 2002-12-13 2003-12-04 Resistor structures to electrically measure unidirectional misalignment of stitched masks

Publications (1)

Publication Number Publication Date
ATE459025T1 true ATE459025T1 (de) 2010-03-15

Family

ID=32595153

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03775673T ATE459025T1 (de) 2002-12-13 2003-12-04 Widerstandsstrukturen zur elektrischen messung einer fehlanpassung in einer richtung von gehefteten masken

Country Status (8)

Country Link
US (2) US7427857B2 (de)
EP (1) EP1573403B1 (de)
JP (1) JP2006510211A (de)
CN (1) CN1723419A (de)
AT (1) ATE459025T1 (de)
AU (1) AU2003283692A1 (de)
DE (1) DE60331472D1 (de)
WO (1) WO2004055599A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006033073A1 (en) * 2004-09-23 2006-03-30 Koninklijke Philips Electronics N.V. Analogue measurement of alignment between layers of a semiconductor device
CN100449406C (zh) * 2006-06-07 2009-01-07 友达光电股份有限公司 电阻测量系统及应用其的测量方法
WO2009130627A1 (en) * 2008-04-23 2009-10-29 Nxp B.V. An integrated circuit and a misalignment determination system for characterizing the same
US8803542B2 (en) * 2010-05-20 2014-08-12 Bae Systems Information And Electronic Systems Integration Inc. Method and apparatus for verifying stitching accuracy of stitched chips on a wafer
CN105241367A (zh) * 2015-10-26 2016-01-13 上海华力微电子有限公司 一种缝合工艺对准精度的检测方法及结构
CN110058486B (zh) * 2019-03-26 2022-06-28 云谷（固安）科技有限公司 掩膜板组件及掩膜板组件拼接精度的检测方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431923A (en) * 1980-05-13 1984-02-14 Hughes Aircraft Company Alignment process using serial detection of repetitively patterned alignment marks
US4571538A (en) * 1983-04-25 1986-02-18 Rockwell International Corporation Mask alignment measurement structure for semiconductor fabrication
DE3831086C1 (en) * 1988-09-13 1990-02-08 Texas Instruments Deutschland Gmbh, 8050 Freising, De Method for determining the alignment of two regions formed in an integrated monolithic (semiconductor) circuit
US5383136A (en) * 1992-03-13 1995-01-17 The United States Of America As Represented By The Secretary Of Commerce Electrical test structure and method for measuring the relative locations of conducting features on an insulating substrate
DE69216223T2 (de) * 1992-07-15 1997-07-10 Sgs Thomson Microelectronics Verfahren zum Messen des Grades der Planheit einer dielektrischen Schicht in einer integrierten Schaltung und integrierter Schaltung mit einer Anordnung zur Durchführung dieses Verfahrens
US6030752A (en) * 1997-02-25 2000-02-29 Advanced Micro Devices, Inc. Method of stitching segments defined by adjacent image patterns during the manufacture of a semiconductor device
US6225013B1 (en) * 1999-05-20 2001-05-01 Tower Semiconductor Ltd. Stitching design rules for forming interconnect layers
US6393714B1 (en) * 2000-02-25 2002-05-28 Xilinx, Inc. Resistor arrays for mask-alignment detection
US6563320B1 (en) * 2000-02-25 2003-05-13 Xilinx, Inc. Mask alignment structure for IC layers
US6305095B1 (en) * 2000-02-25 2001-10-23 Xilinx, Inc. Methods and circuits for mask-alignment detection
US6787800B2 (en) * 2001-07-24 2004-09-07 Pdf Solutions, Inc. Test vehicle with zig-zag structures

Also Published As

Publication number Publication date
US20060060843A1 (en) 2006-03-23
WO2004055599A1 (en) 2004-07-01
JP2006510211A (ja) 2006-03-23
DE60331472D1 (de) 2010-04-08
CN1723419A (zh) 2006-01-18
US7825651B2 (en) 2010-11-02
EP1573403A1 (de) 2005-09-14
US20090212963A1 (en) 2009-08-27
EP1573403B1 (de) 2010-02-24
US7427857B2 (en) 2008-09-23
AU2003283692A1 (en) 2004-07-09

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