ATE459899T1 - Methode und system für einen verbesserten lithographischen prozess - Google Patents

Methode und system für einen verbesserten lithographischen prozess

Info

Publication number
ATE459899T1
ATE459899T1 AT05015414T AT05015414T ATE459899T1 AT E459899 T1 ATE459899 T1 AT E459899T1 AT 05015414 T AT05015414 T AT 05015414T AT 05015414 T AT05015414 T AT 05015414T AT E459899 T1 ATE459899 T1 AT E459899T1
Authority
AT
Austria
Prior art keywords
system parameters
optical
lens pupil
information
substrate
Prior art date
Application number
AT05015414T
Other languages
English (en)
Inventor
De Beeck Maria Op
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE459899T1 publication Critical patent/ATE459899T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT05015414T 2005-07-15 2005-07-15 Methode und system für einen verbesserten lithographischen prozess ATE459899T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05015414A EP1744214B1 (de) 2005-07-15 2005-07-15 Methode und System für einen verbesserten lithographischen Prozess

Publications (1)

Publication Number Publication Date
ATE459899T1 true ATE459899T1 (de) 2010-03-15

Family

ID=34937858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05015414T ATE459899T1 (de) 2005-07-15 2005-07-15 Methode und system für einen verbesserten lithographischen prozess

Country Status (5)

Country Link
US (1) US7800733B2 (de)
EP (1) EP1744214B1 (de)
JP (1) JP2007027740A (de)
AT (1) ATE459899T1 (de)
DE (1) DE602005019711D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8107054B2 (en) * 2007-09-18 2012-01-31 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
EP2177934B1 (de) * 2008-10-17 2011-09-07 Carl Zeiss SMT GmbH Katadioptrisches Projektionsobjektiv mit hoher Transmission und hoher Apertur sowie Projektionsbelichtungsvorrichtung
US20110246141A1 (en) * 2010-03-31 2011-10-06 Tokyo Electron Limited Method of optical metrology optimization using ray tracing
NL2008311A (en) * 2011-04-04 2012-10-08 Asml Netherlands Bv Integration of lithography apparatus and mask optimization process with multiple patterning process.
WO2019214909A1 (en) * 2018-05-07 2019-11-14 Asml Netherlands B.V. Method for determining an electromagnetic field associated with a computational lithography mask model
CN114674429B (zh) * 2022-03-04 2025-03-21 同济大学 一种水下光合有效辐射传感器设备浸没因子测量装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3281241B2 (ja) 1994-12-27 2002-05-13 株式会社東芝 レジストの吸収光量分布評価方法及びシステム
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6532076B1 (en) * 2000-04-04 2003-03-11 Therma-Wave, Inc. Method and apparatus for multidomain data analysis
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JPWO2002031570A1 (ja) * 2000-10-10 2004-02-19 株式会社ニコン 結像性能の評価方法
JP2004061515A (ja) 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP4077288B2 (ja) * 2002-09-30 2008-04-16 株式会社東芝 フォトマスクの設計方法およびプログラム
EP1429190B1 (de) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US6839125B2 (en) 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric

Also Published As

Publication number Publication date
JP2007027740A (ja) 2007-02-01
EP1744214B1 (de) 2010-03-03
DE602005019711D1 (de) 2010-04-15
US7800733B2 (en) 2010-09-21
EP1744214A1 (de) 2007-01-17
US20070013887A1 (en) 2007-01-18

Similar Documents

Publication Publication Date Title
ATE227434T1 (de) Verfahren und vorrichtung zur objektabbildung
US20040023130A1 (en) Test photomask, flare evaluation method, and flare compensation method
EP1634122A4 (de) Verfahren zur bewertung der effekte von mehrfachbelichtungsprozessen in der lithographie
TW200702902A (en) A method, program product and apparatus for performing double exposure lithography
ATE414270T1 (de) Optische inspektion von testoberflächen
TW200912517A (en) Method of testing a photomask, method of manufacturing a photomask, method of manufacturing electronic parts, test mask and test mask set
CN104570585B (zh) 光学邻近修正方法
JP2013016710A5 (de)
TW200622509A (en) A method for performing full-chip manufacturing reliability checking and correction
JP2010021443A5 (de)
ATE459899T1 (de) Methode und system für einen verbesserten lithographischen prozess
SG138616A1 (en) Focus test mask, focus measurement method and exposure apparatus
CN109634054A (zh) 校正半导体光刻的光掩模的临界尺寸均匀性的方法
KR20070062427A (ko) 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법
JPH11233434A5 (de)
JP2003218024A5 (de)
TW200715372A (en) Exposure method
CN105388699B (zh) 评价用掩模、评价方法、曝光装置以及物品的制造方法
ATE320018T1 (de) Lithographieobjektiv mit einer ersten linsengruppe, bestehend ausschliesslich aus linsen positiver brechkraft und verfahren zur herstellung mikrostrukturierter bauteile mit einem solchen objektiv
JP4166166B2 (ja) 露光投影像予測システム及び露光投影像予測方法
Hirayanagi et al. Illumination pupilgram control using an intelligent illuminator
CN113340564B (zh) 用于测量光掩模的方法
CN109307980A (zh) 光掩模检查方法、光掩模制造方法及光掩模检查装置
ATE486303T1 (de) Verfahren zur verarbeitung von flachdruckplatten
KR20110012798A (ko) 포토레지스트 선정을 위한 시뮬레이션 방법

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties