ATE459899T1 - Methode und system für einen verbesserten lithographischen prozess - Google Patents

Methode und system für einen verbesserten lithographischen prozess

Info

Publication number
ATE459899T1
ATE459899T1 AT05015414T AT05015414T ATE459899T1 AT E459899 T1 ATE459899 T1 AT E459899T1 AT 05015414 T AT05015414 T AT 05015414T AT 05015414 T AT05015414 T AT 05015414T AT E459899 T1 ATE459899 T1 AT E459899T1
Authority
AT
Austria
Prior art keywords
system parameters
optical
lens pupil
information
substrate
Prior art date
Application number
AT05015414T
Other languages
English (en)
Inventor
De Beeck Maria Op
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE459899T1 publication Critical patent/ATE459899T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
AT05015414T 2005-07-15 2005-07-15 Methode und system für einen verbesserten lithographischen prozess ATE459899T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05015414A EP1744214B1 (de) 2005-07-15 2005-07-15 Methode und System für einen verbesserten lithographischen Prozess

Publications (1)

Publication Number Publication Date
ATE459899T1 true ATE459899T1 (de) 2010-03-15

Family

ID=34937858

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05015414T ATE459899T1 (de) 2005-07-15 2005-07-15 Methode und system für einen verbesserten lithographischen prozess

Country Status (5)

Country Link
US (1) US7800733B2 (de)
EP (1) EP1744214B1 (de)
JP (1) JP2007027740A (de)
AT (1) ATE459899T1 (de)
DE (1) DE602005019711D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8107054B2 (en) * 2007-09-18 2012-01-31 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
EP2372404B1 (de) * 2008-10-17 2013-01-16 Carl Zeiss SMT GmbH Projektionsobjektiv mit hoher Transmission und hoher Apertur sowie Projektionsbelichtungsvorrichtung
US20110246141A1 (en) * 2010-03-31 2011-10-06 Tokyo Electron Limited Method of optical metrology optimization using ray tracing
NL2008311A (en) * 2011-04-04 2012-10-08 Asml Netherlands Bv Integration of lithography apparatus and mask optimization process with multiple patterning process.
KR102498694B1 (ko) * 2018-05-07 2023-02-10 에이에스엠엘 네델란즈 비.브이. 전산 리소그래피 마스크 모델과 관련된 전자계를 결정하는 방법
CN114674429B (zh) * 2022-03-04 2025-03-21 同济大学 一种水下光合有效辐射传感器设备浸没因子测量装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3281241B2 (ja) 1994-12-27 2002-05-13 株式会社東芝 レジストの吸収光量分布評価方法及びシステム
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6532076B1 (en) * 2000-04-04 2003-03-11 Therma-Wave, Inc. Method and apparatus for multidomain data analysis
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
WO2002031570A1 (en) * 2000-10-10 2002-04-18 Nikon Corporation Method of evaluating imaging performance
JP2004061515A (ja) 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP4077288B2 (ja) * 2002-09-30 2008-04-16 株式会社東芝 フォトマスクの設計方法およびプログラム
EP1429190B1 (de) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
US6839125B2 (en) 2003-02-11 2005-01-04 Asml Netherlands B.V. Method for optimizing an illumination source using full resist simulation and process window response metric
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations

Also Published As

Publication number Publication date
EP1744214B1 (de) 2010-03-03
JP2007027740A (ja) 2007-02-01
DE602005019711D1 (de) 2010-04-15
EP1744214A1 (de) 2007-01-17
US7800733B2 (en) 2010-09-21
US20070013887A1 (en) 2007-01-18

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