ATE459962T1 - Nichtflüchtiger speicher und verfahren mit stromsparenden lese- und programmverifizieroperationen - Google Patents

Nichtflüchtiger speicher und verfahren mit stromsparenden lese- und programmverifizieroperationen

Info

Publication number
ATE459962T1
ATE459962T1 AT05747864T AT05747864T ATE459962T1 AT E459962 T1 ATE459962 T1 AT E459962T1 AT 05747864 T AT05747864 T AT 05747864T AT 05747864 T AT05747864 T AT 05747864T AT E459962 T1 ATE459962 T1 AT E459962T1
Authority
AT
Austria
Prior art keywords
program
volatile memory
read
operations
power
Prior art date
Application number
AT05747864T
Other languages
English (en)
Inventor
Yan Li
Seungpil Lee
Siu Lung Chan
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE459962T1 publication Critical patent/ATE459962T1/de

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Stored Programmes (AREA)
AT05747864T 2005-03-16 2005-05-10 Nichtflüchtiger speicher und verfahren mit stromsparenden lese- und programmverifizieroperationen ATE459962T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/083,514 US7251160B2 (en) 2005-03-16 2005-03-16 Non-volatile memory and method with power-saving read and program-verify operations
PCT/US2005/016516 WO2006101500A1 (en) 2005-03-16 2005-05-10 Non-volatile memory and method with power-saving read and program-verify operations

Publications (1)

Publication Number Publication Date
ATE459962T1 true ATE459962T1 (de) 2010-03-15

Family

ID=35448184

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05747864T ATE459962T1 (de) 2005-03-16 2005-05-10 Nichtflüchtiger speicher und verfahren mit stromsparenden lese- und programmverifizieroperationen

Country Status (9)

Country Link
US (5) US7251160B2 (de)
EP (2) EP1859448B1 (de)
JP (1) JP5149148B2 (de)
KR (1) KR101197478B1 (de)
CN (1) CN101180682B (de)
AT (1) ATE459962T1 (de)
DE (1) DE602005019789D1 (de)
TW (1) TWI304590B (de)
WO (1) WO2006101500A1 (de)

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US7251160B2 (en) 2007-07-31
US8154923B2 (en) 2012-04-10
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US8542529B2 (en) 2013-09-24
US7570513B2 (en) 2009-08-04
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US20070014156A1 (en) 2007-01-18
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JP5149148B2 (ja) 2013-02-20
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US20110222345A1 (en) 2011-09-15
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US20120243332A1 (en) 2012-09-27
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