ATE459975T1 - Verfahren und vorrichtung zur kompensation der randringabnutzung in einer plasmaverarbeitungskammer - Google Patents

Verfahren und vorrichtung zur kompensation der randringabnutzung in einer plasmaverarbeitungskammer

Info

Publication number
ATE459975T1
ATE459975T1 AT03797912T AT03797912T ATE459975T1 AT E459975 T1 ATE459975 T1 AT E459975T1 AT 03797912 T AT03797912 T AT 03797912T AT 03797912 T AT03797912 T AT 03797912T AT E459975 T1 ATE459975 T1 AT E459975T1
Authority
AT
Austria
Prior art keywords
plasma processing
processing chamber
edge ring
substrates
substrate
Prior art date
Application number
AT03797912T
Other languages
English (en)
Inventor
Robert Steger
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE459975T1 publication Critical patent/ATE459975T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • External Artificial Organs (AREA)
  • Ceramic Products (AREA)
AT03797912T 2002-09-18 2003-09-16 Verfahren und vorrichtung zur kompensation der randringabnutzung in einer plasmaverarbeitungskammer ATE459975T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/247,812 US6896765B2 (en) 2002-09-18 2002-09-18 Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
PCT/US2003/029309 WO2004027816A2 (en) 2002-09-18 2003-09-16 A method and apparatus for the compensation of edge ring wear in a plasma processing chamber

Publications (1)

Publication Number Publication Date
ATE459975T1 true ATE459975T1 (de) 2010-03-15

Family

ID=31992568

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03797912T ATE459975T1 (de) 2002-09-18 2003-09-16 Verfahren und vorrichtung zur kompensation der randringabnutzung in einer plasmaverarbeitungskammer

Country Status (11)

Country Link
US (2) US6896765B2 (de)
EP (1) EP1540695B1 (de)
JP (1) JP4841840B2 (de)
KR (1) KR101075048B1 (de)
CN (1) CN100481307C (de)
AT (1) ATE459975T1 (de)
AU (1) AU2003276895A1 (de)
DE (1) DE60331557D1 (de)
IL (1) IL167491A (de)
TW (1) TWI324809B (de)
WO (1) WO2004027816A2 (de)

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Also Published As

Publication number Publication date
JP2005539397A (ja) 2005-12-22
DE60331557D1 (de) 2010-04-15
US6896765B2 (en) 2005-05-24
EP1540695A2 (de) 2005-06-15
KR101075048B1 (ko) 2011-10-19
CN1682344A (zh) 2005-10-12
US20040053428A1 (en) 2004-03-18
CN100481307C (zh) 2009-04-22
TWI324809B (en) 2010-05-11
TW200408043A (en) 2004-05-16
WO2004027816A3 (en) 2004-12-09
EP1540695B1 (de) 2010-03-03
AU2003276895A1 (en) 2004-04-08
US20050056622A1 (en) 2005-03-17
WO2004027816A2 (en) 2004-04-01
JP4841840B2 (ja) 2011-12-21
IL167491A (en) 2009-08-03
KR20050050660A (ko) 2005-05-31
US7176403B2 (en) 2007-02-13

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