ATE463837T1 - Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür - Google Patents

Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür

Info

Publication number
ATE463837T1
ATE463837T1 AT05759168T AT05759168T ATE463837T1 AT E463837 T1 ATE463837 T1 AT E463837T1 AT 05759168 T AT05759168 T AT 05759168T AT 05759168 T AT05759168 T AT 05759168T AT E463837 T1 ATE463837 T1 AT E463837T1
Authority
AT
Austria
Prior art keywords
heating element
protective layer
single crystal
resistive heating
alumina substrate
Prior art date
Application number
AT05759168T
Other languages
English (en)
Inventor
Hongy Lin
Original Assignee
Watlow Electric Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Watlow Electric Mfg filed Critical Watlow Electric Mfg
Application granted granted Critical
Publication of ATE463837T1 publication Critical patent/ATE463837T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/003Heaters using a particular layout for the resistive material or resistive elements using serpentine layout

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Weting (AREA)
AT05759168T 2004-06-14 2005-06-10 Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür ATE463837T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/867,108 US7164104B2 (en) 2004-06-14 2004-06-14 In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same
PCT/US2005/020761 WO2005124829A2 (en) 2004-06-14 2005-06-10 In-line heater for use in semiconductor wet chemical processing and method of manufacturing the same

Publications (1)

Publication Number Publication Date
ATE463837T1 true ATE463837T1 (de) 2010-04-15

Family

ID=34972370

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05759168T ATE463837T1 (de) 2004-06-14 2005-06-10 Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US7164104B2 (de)
EP (1) EP1774571B1 (de)
JP (1) JP2008504675A (de)
AT (1) ATE463837T1 (de)
DE (1) DE602005020453D1 (de)
WO (1) WO2005124829A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9835355B2 (en) * 2007-11-01 2017-12-05 Infinity Fluids Corp. Inter-axial inline fluid heater
US20100077602A1 (en) * 2008-09-27 2010-04-01 Wolfgang Kollenberg Method of making an electrical heater
JP5415797B2 (ja) * 2009-03-24 2014-02-12 株式会社Kelk 流体加熱装置
WO2011005684A1 (en) * 2009-07-08 2011-01-13 American Hometec Non-metal electric heating system and method, and tankless water heater using the same
DE102009034307A1 (de) * 2009-07-21 2011-01-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hochtemperaturheizung sowie Verfahren zu dessen Herstellung
CN103453272B (zh) * 2013-09-12 2015-07-15 扬中市金元化工电力设备厂 一种管道用加热装置
US20210231345A1 (en) * 2020-01-27 2021-07-29 Lexmark International, Inc. Thin-walled tube heater for fluid
WO2022031791A1 (en) * 2020-08-04 2022-02-10 Micropen Technologies Corporation Fluid conduit assemblies and fluid transport systems
US20250039994A1 (en) 2023-07-27 2025-01-30 Heraeus Precious Metals North America Conshohocken Llc Aluminum based resistive heater
CN120111728B (zh) * 2025-05-09 2025-07-04 宁波市扬天磁能科技有限公司 一种绝电瞬热多层复合厚膜发热体

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3304459A (en) * 1964-05-21 1967-02-14 Raytheon Co Heater for an indirectly heated cathode
CH429954A (de) 1964-05-21 1967-02-15 Raytheon Co Kathodenanordnung mit indirekter Heizung
US3515850A (en) * 1967-10-02 1970-06-02 Ncr Co Thermal printing head with diffused printing elements
FR2142272A5 (de) 1971-06-18 1973-01-26 Cibie Projecteurs
US3875413A (en) * 1973-10-09 1975-04-01 Hewlett Packard Co Infrared radiation source
US3852563A (en) * 1974-02-01 1974-12-03 Hewlett Packard Co Thermal printing head
US4213030A (en) * 1977-07-21 1980-07-15 Kyoto Ceramic Kabushiki Kaisha Silicon-semiconductor-type thermal head
JPS6055549B2 (ja) * 1977-09-08 1985-12-05 関西ペイント株式会社 被膜形成用組成物
US4378489A (en) * 1981-05-18 1983-03-29 Honeywell Inc. Miniature thin film infrared calibration source
US4472723A (en) * 1982-04-23 1984-09-18 Oki Electric Industry Co., Ltd. Thermal head
GB8402244D0 (en) * 1984-01-27 1984-02-29 Pilkington Brothers Plc Glass window
DE3437397A1 (de) * 1984-10-12 1986-04-17 Drägerwerk AG, 2400 Lübeck Infrarot-strahler
JPH02148675A (ja) * 1988-11-30 1990-06-07 Mitsubishi Electric Corp 小型発熱体
US5155340A (en) * 1989-07-12 1992-10-13 Mitsubishi Denki Kabushiki Kaisha Thin high temperature heater
JP2911195B2 (ja) * 1990-08-24 1999-06-23 富士通株式会社 リン酸エッチング処理装置
JPH04351103A (ja) * 1991-05-29 1992-12-04 Sumitomo Electric Ind Ltd マイクロ波共振器
FR2708626B1 (fr) * 1993-08-02 1998-06-05 Director General Agency Ind Film ultramince transparent et conducteur et procédé pour sa fabrication.
US5408069A (en) * 1993-09-28 1995-04-18 Mischel, Jr.; James V. Self-defogging mirror
US5895591A (en) * 1994-07-06 1999-04-20 Ngk Spark Plug Co., Ltd. Ceramic heater and oxygen sensor
KR0155969B1 (ko) 1995-11-30 1999-10-01 김광호 냉장고의 선반
US5790752A (en) * 1995-12-20 1998-08-04 Hytec Flow Systems Efficient in-line fluid heater
EP0899986B1 (de) * 1996-05-05 2004-11-24 Tateho Chemical Industries Co., Ltd. Elektrisches heizelement und mit diesem versehehe spannnvorrichtung
US5951896A (en) * 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
US6037574A (en) * 1997-11-06 2000-03-14 Watlow Electric Manufacturing Quartz substrate heater
IL122476A0 (en) * 1997-12-07 1998-06-15 Amt Ltd Electrical heating elements and method for producing same
US6205649B1 (en) * 1999-06-01 2001-03-27 Mark A. Clayton Method of making a ceramic heater with platinum heating element
US6144802A (en) * 1999-06-29 2000-11-07 Hyundai Electronics Industries Co., Ltd. Fluid heater for semiconductor device
US6222166B1 (en) * 1999-08-09 2001-04-24 Watlow Electric Manufacturing Co. Aluminum substrate thick film heater
JP2001102153A (ja) * 1999-09-30 2001-04-13 Ibiden Co Ltd セラミックヒーター
US6580061B2 (en) * 2000-02-01 2003-06-17 Trebor International Inc Durable, non-reactive, resistive-film heater
US6636062B2 (en) * 2001-04-10 2003-10-21 Delta Design, Inc. Temperature control device for an electronic component
JP3582518B2 (ja) * 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
EP1395177B1 (de) * 2001-05-31 2006-07-19 Respironics Inc. Heizvorrichtung für optischen gassensor
JP2003107946A (ja) * 2001-10-01 2003-04-11 Takao Kawamura 定着用ヒート・プレート、定着用半円形発熱部材、及び、ベルト式定着装置

Also Published As

Publication number Publication date
US20050274714A1 (en) 2005-12-15
EP1774571A2 (de) 2007-04-18
WO2005124829A3 (en) 2006-05-18
DE602005020453D1 (de) 2010-05-20
US7164104B2 (en) 2007-01-16
WO2005124829A2 (en) 2005-12-29
JP2008504675A (ja) 2008-02-14
EP1774571B1 (de) 2010-04-07

Similar Documents

Publication Publication Date Title
DE60139463D1 (de) Prozess zur herstellung von dünnfilmtransistoren
ATE463837T1 (de) Inline-heizelement zur verwendung bei der chemischen halbleiter-nassbearbeitung und herstellungsverfahren dafür
WO2009125133A3 (fr) Procede de fabrication d'elements optiques plans et elements obtenus
DE69801987D1 (de) Suszeptor ausführungen für siliziumkarbid-dünnschichten
WO2008120469A1 (ja) 炭化珪素半導体素子の製造方法
TW200635014A (en) Composite structure with high heat dissipation
ATE545148T1 (de) Thermischgesprühte, yttriumoxyd enthaltende beschichtung für plasmareaktoren
EA200601058A1 (ru) Прозрачная подложка, которая может быть использована альтернативно или кумулятивно для теплового контроля, для электромагнитного экранирования и для нагретых окон
WO2007117742A3 (en) Batch processing system and method for performing chemical oxide removal
TW200516673A (en) Heat treatment fixture for semiconductor substrate, and heat treatment method for semiconductor substrate
WO2010012890A3 (fr) Unite et procede de traitements de surface de verre plat avec conditionnement thermique du verre
JP2009027150A5 (de)
TW200717753A (en) Cladding material and its fabrication method, method for molding cladding material, and heat sink using cladding material
SG139648A1 (en) A method of direct bonding two substrates used in electronics, optics, or optoelectronics
WO2008076320A3 (en) Processing apparatus, coated article and associated method
DE602004016985D1 (de) Mehrzonen-keramikheizsystem und verfahren zu seiner herstellung
TW200733206A (en) Substrate processing apparatus, substrate processing method, program, and recording medium having the same
CN106460168A (zh) 基座及其制造方法
GB0317854D0 (en) Method of manufacturing diamond substrates
TW201803010A (zh) 晶座
WO2009072631A1 (ja) 窒化物半導体素子の製造方法および窒化物半導体素子
ATE489608T1 (de) Verfahren zur herstellung eines kontakttemperatursensors und verfahren zum kalibrieren des sensors
EP1638135A3 (de) Aufnahmevorrichtung mit Oberflächenrauhigkeit zur Hochtemperaturbehandlung von Substraten
DE602004027521D1 (de) Infrarotes licht emittierendes bauelement und gassensor damit
JP2000206809A5 (de)

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1774571

Country of ref document: EP