ATE464776T1 - Gasentladungsquelle, insbesondere für euv- strahlung - Google Patents

Gasentladungsquelle, insbesondere für euv- strahlung

Info

Publication number
ATE464776T1
ATE464776T1 AT06744876T AT06744876T ATE464776T1 AT E464776 T1 ATE464776 T1 AT E464776T1 AT 06744876 T AT06744876 T AT 06744876T AT 06744876 T AT06744876 T AT 06744876T AT E464776 T1 ATE464776 T1 AT E464776T1
Authority
AT
Austria
Prior art keywords
electrodes
gas discharge
connecting element
electrode
circular periphery
Prior art date
Application number
AT06744876T
Other languages
English (en)
Inventor
Jakob Willi Neff
Ralf Pruemmer
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE464776T1 publication Critical patent/ATE464776T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Luminescent Compositions (AREA)
AT06744876T 2005-05-19 2006-05-08 Gasentladungsquelle, insbesondere für euv- strahlung ATE464776T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005023060A DE102005023060B4 (de) 2005-05-19 2005-05-19 Gasentladungs-Strahlungsquelle, insbesondere für EUV-Strahlung
PCT/IB2006/051428 WO2006123270A2 (en) 2005-05-19 2006-05-08 Gas discharge source, in particular for euv radiation

Publications (1)

Publication Number Publication Date
ATE464776T1 true ATE464776T1 (de) 2010-04-15

Family

ID=36933632

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06744876T ATE464776T1 (de) 2005-05-19 2006-05-08 Gasentladungsquelle, insbesondere für euv- strahlung

Country Status (8)

Country Link
US (1) US7630475B2 (de)
EP (1) EP1886542B1 (de)
JP (1) JP4879974B2 (de)
KR (1) KR101214136B1 (de)
CN (1) CN101180923B (de)
AT (1) ATE464776T1 (de)
DE (2) DE102005023060B4 (de)
WO (1) WO2006123270A2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7518134B2 (en) * 2006-12-06 2009-04-14 Asml Netherlands B.V. Plasma radiation source for a lithographic apparatus
US7759663B1 (en) * 2006-12-06 2010-07-20 Asml Netherlands B.V. Self-shading electrodes for debris suppression in an EUV source
US7696493B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7696492B2 (en) * 2006-12-13 2010-04-13 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7838853B2 (en) * 2006-12-14 2010-11-23 Asml Netherlands B.V. Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
DE102007004440B4 (de) * 2007-01-25 2011-05-12 Xtreme Technologies Gmbh Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung mittels einer elektrisch betriebenen Gasentladung
JP5149514B2 (ja) * 2007-02-20 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
US20080239262A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation
US7629593B2 (en) * 2007-06-28 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, radiation system, device manufacturing method, and radiation generating method
KR101477472B1 (ko) 2007-09-07 2014-12-30 코닌클리케 필립스 엔.브이. 가스 방전 소스를 위한 전극 장치 및 이 전극 장치를 갖는 가스 방전 소스를 동작시키는 방법
CN101796892B (zh) 2007-09-07 2013-02-06 皇家飞利浦电子股份有限公司 用于以高功率操作的包括轮盖的气体放电源的转轮式电极装置
EP2198676A1 (de) * 2007-10-01 2010-06-23 Philips Intellectual Property & Standards GmbH Hochspannungsstromanschlussleitung
JP4952513B2 (ja) * 2007-10-31 2012-06-13 ウシオ電機株式会社 極端紫外光光源装置
WO2009077943A1 (en) * 2007-12-14 2009-06-25 Philips Intellectual Property & Standards Gmbh Method for laser-based plasma production and radiation source, in particular for euv radiation
DE102007060807B4 (de) 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
CN102099746B (zh) * 2008-07-18 2013-05-08 皇家飞利浦电子股份有限公司 包含污染捕获器的极端紫外辐射生成设备
EP2170021B1 (de) * 2008-09-25 2015-11-04 ASML Netherlands B.V. Quellenmodul, Strahlungsquelle und Lithografievorrichtung
JP4623192B2 (ja) * 2008-09-29 2011-02-02 ウシオ電機株式会社 極端紫外光光源装置および極端紫外光発生方法
JP5245857B2 (ja) * 2009-01-21 2013-07-24 ウシオ電機株式会社 極端紫外光光源装置
JP5504673B2 (ja) * 2009-03-30 2014-05-28 ウシオ電機株式会社 極端紫外光光源装置
KR101706908B1 (ko) * 2009-10-29 2017-02-15 코닌클리케 필립스 엔.브이. 특히 가스 방전 광원들을 위한 전극 시스템
EP2555598A1 (de) * 2011-08-05 2013-02-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Erzeugung optischer Strahlung mithilfe elektrisch betätigter gepulster Entladungen
NL2009683A (en) * 2011-11-15 2013-05-16 Asml Netherlands Bv Radiation source device, lithographic apparatus, and device manufacturing method.
DE102012109809B3 (de) 2012-10-15 2013-12-12 Xtreme Technologies Gmbh Vorrichtung zur Erzeugung von kurzwelliger elektromagnetischer Strahlung auf Basis eines Gasentladungsplasmas
DE102013103668B4 (de) * 2013-04-11 2016-02-25 Ushio Denki Kabushiki Kaisha Anordnung zum Handhaben eines flüssigen Metalls zur Kühlung von umlaufenden Komponenten einer Strahlungsquelle auf Basis eines strahlungsemittierenden Plasmas
DE102013109048A1 (de) * 2013-08-21 2015-02-26 Ushio Denki Kabushiki Kaisha Verfahren und Vorrichtung zur Kühlung von Strahlungsquellen auf Basis eines Plasmas
DE102013017655B4 (de) * 2013-10-18 2017-01-05 Ushio Denki Kabushiki Kaisha Anordnung und Verfahren zum Kühlen einer plasmabasierten Strahlungsquelle
DE102014102720B4 (de) 2014-02-28 2017-03-23 Ushio Denki Kabushiki Kaisha Anordnung zum Kühlen einer plasmabasierten Strahlungsquelle mit einer metallischen Kühlflüssigkeit und Verfahren zur Inbetriebnahme einer solchen Kühlanordnung
US10021773B2 (en) * 2015-11-16 2018-07-10 Kla-Tencor Corporation Laser produced plasma light source having a target material coated on a cylindrically-symmetric element
CN111263577B (zh) * 2018-12-03 2024-10-01 北京梦之墨科技有限公司 一种具有电磁屏蔽性能的旋转结构
US11596048B2 (en) * 2019-09-23 2023-02-28 Kla Corporation Rotating lamp for laser-sustained plasma illumination source
JP7626009B2 (ja) * 2021-08-30 2025-02-04 ウシオ電機株式会社 放電プラズマ生成ユニット、及びそれを搭載した光源装置
CN113960019A (zh) * 2021-10-26 2022-01-21 天津大学 一种双转盘电极原子发射光谱油液元素装置
KR20250109087A (ko) 2024-01-09 2025-07-16 한국표준과학연구원 레이저 생성 플라즈마를 사용하는 극자외선 발생 장치 및 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000061839A (ja) 1998-08-19 2000-02-29 Rikagaku Kenkyusho マイクロ放電ツルーイング装置とこれを用いた微細加工方法
TW589924B (en) * 2001-04-06 2004-06-01 Fraunhofer Ges Forschung Process and device for producing extreme ultraviolet ray/weak x-ray
CN101795527B (zh) * 2002-09-19 2013-02-20 Asml荷兰有限公司 辐射源、光刻装置和器件制造方法
EP1401248B1 (de) * 2002-09-19 2012-07-25 ASML Netherlands B.V. Strahlungsquelle, Lithographiegerät und Methode zur Herstellung von Bauelementen
AU2003303542A1 (en) 2003-01-02 2004-07-29 Jmar Research Inc. Method and apparatus for generating a membrane target for laser produced plasma
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
RU2278483C2 (ru) * 2004-04-14 2006-06-20 Владимир Михайлович Борисов Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы
US7501642B2 (en) * 2005-12-29 2009-03-10 Asml Netherlands B.V. Radiation source

Also Published As

Publication number Publication date
EP1886542A2 (de) 2008-02-13
US20080187105A1 (en) 2008-08-07
EP1886542B1 (de) 2010-04-14
DE602006013621D1 (de) 2010-05-27
CN101180923B (zh) 2011-12-14
JP2008541472A (ja) 2008-11-20
CN101180923A (zh) 2008-05-14
DE102005023060A1 (de) 2006-11-30
KR101214136B1 (ko) 2012-12-21
US7630475B2 (en) 2009-12-08
WO2006123270A2 (en) 2006-11-23
JP4879974B2 (ja) 2012-02-22
DE102005023060B4 (de) 2011-01-27
WO2006123270A3 (en) 2007-03-08
KR20080043740A (ko) 2008-05-19

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