ATE469372T1 - Elektronische vorrichtung mit kunststoffsubstrat - Google Patents

Elektronische vorrichtung mit kunststoffsubstrat

Info

Publication number
ATE469372T1
ATE469372T1 AT07826847T AT07826847T ATE469372T1 AT E469372 T1 ATE469372 T1 AT E469372T1 AT 07826847 T AT07826847 T AT 07826847T AT 07826847 T AT07826847 T AT 07826847T AT E469372 T1 ATE469372 T1 AT E469372T1
Authority
AT
Austria
Prior art keywords
substrate
plastic
plastic substrate
electronic device
plane
Prior art date
Application number
AT07826847T
Other languages
English (en)
Inventor
Eliav I Haskal
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE469372T1 publication Critical patent/ATE469372T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT07826847T 2006-10-27 2007-10-24 Elektronische vorrichtung mit kunststoffsubstrat ATE469372T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06123059 2006-10-27
PCT/IB2007/054322 WO2008050300A1 (en) 2006-10-27 2007-10-24 Electronic device having a plastic substrate

Publications (1)

Publication Number Publication Date
ATE469372T1 true ATE469372T1 (de) 2010-06-15

Family

ID=39135351

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07826847T ATE469372T1 (de) 2006-10-27 2007-10-24 Elektronische vorrichtung mit kunststoffsubstrat

Country Status (7)

Country Link
US (2) US20100196683A1 (de)
EP (1) EP2078226B1 (de)
JP (1) JP5033880B2 (de)
CN (1) CN101529316B (de)
AT (1) ATE469372T1 (de)
DE (1) DE602007006834D1 (de)
WO (1) WO2008050300A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2052406A2 (de) * 2006-08-10 2009-04-29 Koninklijke Philips Electronics N.V. Aktive matrixanzeigen und andere elektronische vorrichtungen mit plastischen substraten
CN102239553B (zh) * 2008-12-05 2014-08-27 皇家飞利浦电子股份有限公司 具有塑料基板的电子装置
JP2010202729A (ja) * 2009-03-02 2010-09-16 Hitachi Chemical Dupont Microsystems Ltd フレキシブルデバイス基板用ポリイミド前駆体樹脂組成物及びそれを用いたフレキシブルデバイスの製造方法、フレキシブルデバイス
JP2011029574A (ja) * 2009-03-31 2011-02-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR101149433B1 (ko) * 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
CN102917859B (zh) * 2010-03-31 2015-12-16 宇部兴产株式会社 聚酰亚胺膜，以及制备聚酰亚胺膜的方法
KR101056431B1 (ko) * 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
CN102096264B (zh) * 2011-02-24 2014-03-26 华映视讯（吴江）有限公司 像素阵列基板及反射式显示面板
US9236411B2 (en) 2011-08-03 2016-01-12 Omnivision Technologies, Inc. Color filter patterning using hard mask
JP2013250551A (ja) * 2012-05-01 2013-12-12 Sumitomo Bakelite Co Ltd 表示素子作製方法
JP6194233B2 (ja) 2013-01-08 2017-09-06 株式会社ジャパンディスプレイ 表示装置の製造方法
JP6412989B2 (ja) * 2013-01-08 2018-10-24 株式会社ジャパンディスプレイ 表示装置の製造方法
US8941159B2 (en) 2013-01-30 2015-01-27 Omnivision Technologies, Inc. Color filter including clear pixel and hard mask
CN103531715B (zh) * 2013-03-26 2016-03-02 Tcl集团股份有限公司 柔性光电器件衬底、柔性光电器件及制备方法
CN106663391B (zh) 2013-12-02 2019-09-03 株式会社半导体能源研究所 显示装置及其制造方法
WO2015116770A2 (en) * 2014-01-29 2015-08-06 Massachusetts Institute Of Technology Bottom-up ultra-thin functional optoelectronic films and devices
JP6254274B2 (ja) * 2014-06-25 2017-12-27 旭化成株式会社 空隙を有するポリイミドフィルム及びその製造方法
TW201605646A (zh) * 2014-08-04 2016-02-16 友達光電股份有限公司 可撓性顯示面板的製造方法
US9397001B2 (en) 2014-12-11 2016-07-19 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component
JP6206446B2 (ja) * 2015-05-26 2017-10-04 日立化成デュポンマイクロシステムズ株式会社 フレキシブルデバイス基板形成用ポリイミド前駆体樹脂組成物及びそれを用いたフレキシブルデバイスの製造方法、フレキシブルデバイス
EP3377938B1 (de) * 2015-11-18 2025-05-14 Gentex Corporation Elektrooptische gasbarriere
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
WO2018020333A1 (en) 2016-07-29 2018-02-01 Semiconductor Energy Laboratory Co., Ltd. Separation method, display device, display module, and electronic device
TW201808628A (zh) 2016-08-09 2018-03-16 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置

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Also Published As

Publication number Publication date
US9268162B2 (en) 2016-02-23
US20100196683A1 (en) 2010-08-05
JP5033880B2 (ja) 2012-09-26
WO2008050300A1 (en) 2008-05-02
CN101529316B (zh) 2012-07-11
JP2010507829A (ja) 2010-03-11
CN101529316A (zh) 2009-09-09
EP2078226B1 (de) 2010-05-26
US20100323170A1 (en) 2010-12-23
EP2078226A1 (de) 2009-07-15
DE602007006834D1 (de) 2010-07-08

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