ATE470266T1 - Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter - Google Patents

Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter

Info

Publication number
ATE470266T1
ATE470266T1 AT08100706T AT08100706T ATE470266T1 AT E470266 T1 ATE470266 T1 AT E470266T1 AT 08100706 T AT08100706 T AT 08100706T AT 08100706 T AT08100706 T AT 08100706T AT E470266 T1 ATE470266 T1 AT E470266T1
Authority
AT
Austria
Prior art keywords
source
switch
control device
states
auxiliary
Prior art date
Application number
AT08100706T
Other languages
English (en)
Inventor
Michel Arpilliere
Philippe Baudesson
Hocine Boulharts
Philippe Loizelet
Original Assignee
Schneider Toshiba Inverter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schneider Toshiba Inverter filed Critical Schneider Toshiba Inverter
Application granted granted Critical
Publication of ATE470266T1 publication Critical patent/ATE470266T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/20—Modifications for resetting core switching units to a predetermined state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K2017/066—Maximizing the OFF-resistance instead of minimizing the ON-resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Control Of Ac Motors In General (AREA)
  • Inverter Devices (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Relay Circuits (AREA)
  • Control Of Stepping Motors (AREA)
AT08100706T 2007-01-23 2008-01-21 Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter ATE470266T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0752840A FR2911736B1 (fr) 2007-01-23 2007-01-23 Dispositif de commande d'un interrupteur de puissance et variateur comprenant un tel dipositif.

Publications (1)

Publication Number Publication Date
ATE470266T1 true ATE470266T1 (de) 2010-06-15

Family

ID=38458073

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08100706T ATE470266T1 (de) 2007-01-23 2008-01-21 Steuervorrichtung eines elektronischen leistungstrenners und eine solche vorrichtung umfassender stromrichter

Country Status (7)

Country Link
US (1) US7723869B2 (de)
EP (1) EP1950885B1 (de)
JP (1) JP5058835B2 (de)
AT (1) ATE470266T1 (de)
DE (1) DE602008001381D1 (de)
ES (1) ES2346267T3 (de)
FR (1) FR2911736B1 (de)

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US9806593B2 (en) 2008-08-21 2017-10-31 Mitsubishi Electric Corporation Drive circuit of power semiconductor device
ES2353039T3 (es) * 2008-12-23 2011-02-24 Sma Solar Technology Ag Circuito eléctrico con interruptor semiconductor autoconductor.
FR2941577B1 (fr) * 2009-01-27 2011-02-11 Schneider Electric Ind Sas Dispositif de commande d'un transistor jfet
AU2010247781A1 (en) 2009-05-11 2011-11-24 Power Integrations, Inc. Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
JP5170075B2 (ja) * 2009-12-28 2013-03-27 サンケン電気株式会社 電流型インバータ装置
EP2355290B1 (de) * 2010-02-04 2017-04-26 Inmotion Technologies AB Schutzschaltung für eine Antriebsschaltung eines Permanentmagnetmotors und entsprechendes System
WO2011099117A1 (ja) * 2010-02-09 2011-08-18 三菱電機株式会社 プログラマブルコントローラ
US8320090B2 (en) * 2010-06-08 2012-11-27 Hamilton Sundstrand Corporation SSPC for parallel arc fault detection in DC power system
US20120262220A1 (en) * 2011-04-13 2012-10-18 Semisouth Laboratories, Inc. Cascode switches including normally-off and normally-on devices and circuits comprising the switches
GB201112144D0 (en) 2011-07-15 2011-08-31 Cambridge Entpr Ltd Switching circuits
JP5811800B2 (ja) * 2011-11-18 2015-11-11 富士通株式会社 制御回路及び電子機器
WO2013084277A1 (ja) * 2011-12-05 2013-06-13 三菱電機株式会社 電源電圧監視機能を有する電子制御装置及びそれを備えた車両ステアリング制御装置
US9025294B2 (en) * 2012-02-24 2015-05-05 Hamilton Sundstrand Corporation System and method for controlling solid state circuit breakers
FR2990312B1 (fr) * 2012-05-03 2015-05-15 Alstom Transport Sa Un dispositif comportant un composant electronique avec une grande vitesse de commutation
JP6237038B2 (ja) * 2013-09-20 2017-11-29 富士通株式会社 カスコードトランジスタ及びカスコードトランジスタの制御方法
WO2015078482A1 (en) * 2013-11-22 2015-06-04 Intel Corporation Methods and devices for detecting open and/or shorts circuits in mems micro-mirror devices
AT516568B1 (de) * 2014-11-21 2017-03-15 Bernecker + Rainer Industrie-Elektronik Ges M B H Vorrichtung und ein Verfahren zur sicheren Ansteuerung eines Halbleiterschalters eines Wechselrichters
JP6591315B2 (ja) * 2016-03-09 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置、チャージポンプ回路、半導体システム、車両及び半導体装置の制御方法
US9871510B1 (en) 2016-08-24 2018-01-16 Power Integrations, Inc. Clamp for a hybrid switch
JP2019533417A (ja) 2016-10-05 2019-11-14 ジョンソン コントロールズ テクノロジー カンパニー Ｈｖａｃ＆ｒシステムのための可変速駆動装置
US10516262B2 (en) * 2016-12-01 2019-12-24 Osypka Medical Gmbh Overvoltage protection device and method
US10511297B2 (en) 2017-07-25 2019-12-17 Psemi Corporation High-speed switch with accelerated switching time
US10734992B2 (en) * 2017-08-09 2020-08-04 Infineon Technologies Ag Circuit and method for providing an output signal
FR3083396B1 (fr) * 2018-06-28 2020-08-21 Valeo Equip Electr Moteur Systeme de commande d'un interrupteur, bras de commutation et installation electrique
CN109347463B (zh) * 2018-10-26 2022-04-19 苏州农业职业技术学院 一种自动化推拉电磁铁式的拨码装置
US11101640B1 (en) 2020-07-29 2021-08-24 Abb Schweiz Solid-state protection for direct current networks
JP7559716B2 (ja) * 2021-09-07 2024-10-02 三菱電機株式会社 半導体装置
CN115378413B (zh) * 2022-10-25 2023-01-24 成都市易冲半导体有限公司 控制电路及控制方法
CN116191874B (zh) * 2023-02-07 2025-02-07 长鑫存储技术有限公司 电源电路及芯片
DE102023201509A1 (de) * 2023-02-21 2024-08-22 Zf Friedrichshafen Ag Sichere Abschaltung eines Wechselrichters

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JP4600180B2 (ja) * 2005-06-27 2010-12-15 株式会社日立製作所 電界効果型パワー半導体素子を用いた半導体回路
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Also Published As

Publication number Publication date
JP2008182884A (ja) 2008-08-07
EP1950885A1 (de) 2008-07-30
EP1950885B1 (de) 2010-06-02
JP5058835B2 (ja) 2012-10-24
US7723869B2 (en) 2010-05-25
ES2346267T3 (es) 2010-10-13
FR2911736A1 (fr) 2008-07-25
US20080174184A1 (en) 2008-07-24
DE602008001381D1 (de) 2010-07-15
FR2911736B1 (fr) 2009-03-20

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