ATE473516T1 - Poliermittel und polierverfahren - Google Patents

Poliermittel und polierverfahren

Info

Publication number
ATE473516T1
ATE473516T1 AT05720184T AT05720184T ATE473516T1 AT E473516 T1 ATE473516 T1 AT E473516T1 AT 05720184 T AT05720184 T AT 05720184T AT 05720184 T AT05720184 T AT 05720184T AT E473516 T1 ATE473516 T1 AT E473516T1
Authority
AT
Austria
Prior art keywords
polishing
polishing composition
polished
integrated circuit
semiconductor integrated
Prior art date
Application number
AT05720184T
Other languages
English (en)
Inventor
Satoshi Takemiya
Sachie Shinmaru
Original Assignee
Asahi Glass Co Ltd
Seimi Chem Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chem Kk filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE473516T1 publication Critical patent/ATE473516T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05720184T 2004-03-08 2005-03-07 Poliermittel und polierverfahren ATE473516T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004063366 2004-03-08
JP2004305238A JP2005294798A (ja) 2004-03-08 2004-10-20 研磨剤および研磨方法
PCT/JP2005/003912 WO2005086213A1 (ja) 2004-03-08 2005-03-07 研磨剤および研磨方法

Publications (1)

Publication Number Publication Date
ATE473516T1 true ATE473516T1 (de) 2010-07-15

Family

ID=34921714

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05720184T ATE473516T1 (de) 2004-03-08 2005-03-07 Poliermittel und polierverfahren

Country Status (7)

Country Link
US (3) US20070004210A1 (de)
EP (1) EP1724819B1 (de)
JP (1) JP2005294798A (de)
KR (1) KR20070001994A (de)
AT (1) ATE473516T1 (de)
DE (1) DE602005022168D1 (de)
WO (1) WO2005086213A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1833085A1 (de) * 1998-12-28 2007-09-12 Hitachi Chemical Company, Ltd. Materialien für eine Reinigungsflüssigkeit für Metall, Reinigungsflüssigkeit für Metall, Herstellungsverfahren dafür und Reinigungsverfahren damit
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US20080171441A1 (en) * 2005-06-28 2008-07-17 Asahi Glass Co., Ltd. Polishing compound and method for producing semiconductor integrated circuit device
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
WO2007029465A1 (ja) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法
KR101406642B1 (ko) * 2006-04-03 2014-06-11 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트
SG139699A1 (en) 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
CN101663738A (zh) * 2007-04-17 2010-03-03 旭硝子株式会社 研磨剂组合物和制造半导体集成电路装置的方法
JP2008307631A (ja) * 2007-06-13 2008-12-25 Asahi Glass Co Ltd ガラス基板研磨方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
JP2012109287A (ja) * 2009-03-13 2012-06-07 Asahi Glass Co Ltd 半導体用研磨剤、その製造方法及び研磨方法
JP5877940B2 (ja) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド 銅及びシリコンが表面に露出したウェーハの研磨方法
USD671861S1 (en) 2011-08-16 2012-12-04 Trek Bicycle Corporation Buckle closure
US9629410B2 (en) 2011-08-16 2017-04-25 Trek Bicycle Corporation Anti-pinch apparel closure
KR102264348B1 (ko) * 2013-07-11 2021-06-11 바스프 에스이 부식 저해제로서 벤조트리아졸 유도체를 포함하는 화학-기계적 연마 조성물
US10035929B2 (en) * 2015-11-30 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. pH-adjuster free chemical mechanical planarization slurry
JP2017110177A (ja) * 2015-12-14 2017-06-22 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
EP3537891B1 (de) 2016-11-09 2024-09-11 PepsiCo, Inc. Vorrichtungen, verfahren und systeme zur herstellung kohlensäurehaltiger getränke
US11649377B2 (en) * 2017-08-14 2023-05-16 Resonac Corporation Polishing liquid, polishing liquid set and polishing method
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
CN117025288B (zh) * 2023-07-26 2025-11-04 国家石油天然气管网集团有限公司 一种喷砂浆料及其制备方法和应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
JP3265199B2 (ja) * 1996-09-30 2002-03-11 株式会社東芝 化学的機械研磨法、化学的機械研磨法に用いる研磨剤および半導体装置の製造方法
KR100512453B1 (ko) * 1999-08-26 2005-09-07 히다치 가세고교 가부시끼가이샤 화학기계연마용 연마제 및 연마방법
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
CN1306562C (zh) * 2001-10-26 2007-03-21 旭硝子株式会社 研磨剂、研磨剂的制造方法以及研磨方法
CN101058713B (zh) * 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
JP2004031443A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2004031442A (ja) * 2002-06-21 2004-01-29 Hitachi Chem Co Ltd 研磨液及び研磨方法
EP1622742A4 (de) * 2003-05-12 2009-06-10 Advanced Tech Materials Cmp-zusammensetzungen für schritt-ii-kupferauskleidung und andere zugeordnete materialien und verwendungsverfahren dafür
EP1566420A1 (de) * 2004-01-23 2005-08-24 JSR Corporation Wässrige Dispersionsaufschlämmung für chemisch/mechanische Polierung und Verwendung in einem Polierverfahren
CN101663738A (zh) * 2007-04-17 2010-03-03 旭硝子株式会社 研磨剂组合物和制造半导体集成电路装置的方法

Also Published As

Publication number Publication date
DE602005022168D1 (de) 2010-08-19
KR20070001994A (ko) 2007-01-04
US20100323522A1 (en) 2010-12-23
JP2005294798A (ja) 2005-10-20
EP1724819A1 (de) 2006-11-22
WO2005086213A1 (ja) 2005-09-15
EP1724819B1 (de) 2010-07-07
EP1724819A4 (de) 2008-10-15
US20110008965A1 (en) 2011-01-13
US20070004210A1 (en) 2007-01-04

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