ATE474325T1 - Zusammenfügen zweier substrate mittels molekularer adhäsion - Google Patents

Zusammenfügen zweier substrate mittels molekularer adhäsion

Info

Publication number
ATE474325T1
ATE474325T1 AT05782045T AT05782045T ATE474325T1 AT E474325 T1 ATE474325 T1 AT E474325T1 AT 05782045 T AT05782045 T AT 05782045T AT 05782045 T AT05782045 T AT 05782045T AT E474325 T1 ATE474325 T1 AT E474325T1
Authority
AT
Austria
Prior art keywords
substrates
substrate
faces
face
bonds
Prior art date
Application number
AT05782045T
Other languages
English (en)
Inventor
Guy Feuillet
Hubert Moriceau
Stephane Pocas
Eric Jalaguier
Norbert Moussy
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE474325T1 publication Critical patent/ATE474325T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Laminated Bodies (AREA)
  • Organic Insulating Materials (AREA)
  • Multicomponent Fibers (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Combinations Of Printed Boards (AREA)
AT05782045T 2004-06-30 2005-06-29 Zusammenfügen zweier substrate mittels molekularer adhäsion ATE474325T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0451374A FR2872627B1 (fr) 2004-06-30 2004-06-30 Assemblage par adhesion moleculaire de deux substrats
PCT/FR2005/050522 WO2006008411A1 (fr) 2004-06-30 2005-06-29 Assemblage par adhesion moleculaire de deux substrats

Publications (1)

Publication Number Publication Date
ATE474325T1 true ATE474325T1 (de) 2010-07-15

Family

ID=34947789

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05782045T ATE474325T1 (de) 2004-06-30 2005-06-29 Zusammenfügen zweier substrate mittels molekularer adhäsion

Country Status (7)

Country Link
US (1) US7906362B2 (de)
EP (1) EP1774588B1 (de)
JP (1) JP5706061B2 (de)
AT (1) ATE474325T1 (de)
DE (1) DE602005022317D1 (de)
FR (1) FR2872627B1 (de)
WO (1) WO2006008411A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864336B1 (fr) * 2003-12-23 2006-04-28 Commissariat Energie Atomique Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
US9646869B2 (en) * 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
FR2961013B1 (fr) 2010-06-03 2013-05-17 Commissariat Energie Atomique Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat.
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
JP2016174016A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体装置および半導体装置の製造方法
KR20180074671A (ko) * 2015-08-31 2018-07-03 쥐-레이 스위츨란드 에스에이 모놀리식 cmos 통합된 픽셀 검출기가 구비된 광자 계측용 콘빔 ct 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US6097096A (en) * 1997-07-11 2000-08-01 Advanced Micro Devices Metal attachment method and structure for attaching substrates at low temperatures
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
FR2783969B1 (fr) * 1998-09-28 2002-01-18 Commissariat Energie Atomique Dispositif hybride et procede de realisation de composants electriquement actifs par assemblage
JP3432770B2 (ja) * 1998-09-29 2003-08-04 シャープ株式会社 二次元画像検出器の製造方法
JP3532788B2 (ja) * 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
FR2798224B1 (fr) * 1999-09-08 2003-08-29 Commissariat Energie Atomique Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
FR2810448B1 (fr) * 2000-06-16 2003-09-19 Soitec Silicon On Insulator Procede de fabrication de substrats et substrats obtenus par ce procede
FR2816445B1 (fr) 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
DE10124038A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung vergrabener Bereiche
FR2830125B1 (fr) * 2001-09-24 2006-11-17 Commissariat Energie Atomique Procede de realisation d'une prise de contact en face arriere d'un composant a substrats empiles et composant equipe d'une telle prise de contact
US6809358B2 (en) * 2002-02-05 2004-10-26 E-Phocus, Inc. Photoconductor on active pixel image sensor
US7436038B2 (en) * 2002-02-05 2008-10-14 E-Phocus, Inc Visible/near infrared image sensor array
US6809008B1 (en) * 2003-08-28 2004-10-26 Motorola, Inc. Integrated photosensor for CMOS imagers
CN1922732B (zh) * 2004-02-25 2010-06-09 S.O.I.Tec绝缘体上硅技术公司 光电检测装置

Also Published As

Publication number Publication date
JP5706061B2 (ja) 2015-04-22
DE602005022317D1 (de) 2010-08-26
FR2872627B1 (fr) 2006-08-18
WO2006008411A1 (fr) 2006-01-26
JP2008504707A (ja) 2008-02-14
EP1774588A1 (de) 2007-04-18
US20080296712A1 (en) 2008-12-04
FR2872627A1 (fr) 2006-01-06
EP1774588B1 (de) 2010-07-14
US7906362B2 (en) 2011-03-15

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