ATE476003T1 - Herstellungsverfahren einer laserdiodenbarrenanordnung - Google Patents

Herstellungsverfahren einer laserdiodenbarrenanordnung

Info

Publication number
ATE476003T1
ATE476003T1 AT07114048T AT07114048T ATE476003T1 AT E476003 T1 ATE476003 T1 AT E476003T1 AT 07114048 T AT07114048 T AT 07114048T AT 07114048 T AT07114048 T AT 07114048T AT E476003 T1 ATE476003 T1 AT E476003T1
Authority
AT
Austria
Prior art keywords
laser diode
production method
bar arrangement
diode bar
heat sink
Prior art date
Application number
AT07114048T
Other languages
English (en)
Inventor
Prabhu Thiagarajan
Mark Mcelhinney
Jason Helmrich
Feliks Lapinski
Original Assignee
Lasertel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lasertel Inc filed Critical Lasertel Inc
Application granted granted Critical
Publication of ATE476003T1 publication Critical patent/ATE476003T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT07114048T 2006-08-10 2007-08-09 Herstellungsverfahren einer laserdiodenbarrenanordnung ATE476003T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82207106P 2006-08-10 2006-08-10
US11/829,030 US7864825B2 (en) 2006-08-10 2007-07-26 Method and system for a laser diode bar array assembly

Publications (1)

Publication Number Publication Date
ATE476003T1 true ATE476003T1 (de) 2010-08-15

Family

ID=38686826

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07114048T ATE476003T1 (de) 2006-08-10 2007-08-09 Herstellungsverfahren einer laserdiodenbarrenanordnung

Country Status (4)

Country Link
US (1) US7864825B2 (de)
EP (1) EP1887666B1 (de)
AT (1) ATE476003T1 (de)
DE (1) DE602007008018D1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007054856A1 (de) * 2007-11-16 2009-05-20 Osram Gesellschaft mit beschränkter Haftung Beleuchtungsvorrichtung mit einer Substratplatte und einem Kühlkörper
CN201199606Y (zh) * 2008-01-30 2009-02-25 深圳世纪晶源光子技术有限公司 半导体激光器的封装结构
US7660335B2 (en) * 2008-04-17 2010-02-09 Lasertel, Inc. Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials
US8490678B2 (en) * 2008-06-02 2013-07-23 Gerald Ho Kim Silicon-based thermal energy transfer device and apparatus
US8238401B2 (en) * 2008-08-25 2012-08-07 Gerald Ho Kim Silicon-based lens support structure for diode laser
US9042424B2 (en) * 2008-08-25 2015-05-26 Gerald Ho Kim Silicon-based lens support structure and cooling package with passive alignment for compact heat-generating devices
US9008147B2 (en) * 2008-08-25 2015-04-14 Gerald Ho Kim Silicon-based lens support structure and cooling package with passive alignment for compact heat-generating devices
GB201020008D0 (en) 2010-11-25 2011-01-12 Selex Galileo Ltd Laser system and method of operation
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks
CN102570291B (zh) * 2011-12-20 2014-10-08 西安炬光科技有限公司 一种传导制冷型高功率半导体激光器及其制备方法
CN103633549B (zh) * 2012-08-30 2016-01-20 苏州长光华芯光电技术有限公司 一种半导体激光器阵列单芯片的封装方法
CN103457151B (zh) * 2013-08-08 2016-01-20 中国科学院苏州生物医学工程技术研究所 一种高温硬焊料准连续半导体激光器巴条叠阵封装方法
CN103746287A (zh) * 2014-01-10 2014-04-23 中国科学院苏州生物医学工程技术研究所 一种应用于长脉宽的大功率半导体激光器封装结构
DE102014203846A1 (de) * 2014-03-03 2015-09-03 MAHLE Behr GmbH & Co. KG Anordnung mit einer elektrischen Komponente und einem Wärmetauscher
US9054482B1 (en) * 2014-05-07 2015-06-09 Jiang Li Laser diode stack assembly and method of manufacturing
US10186833B2 (en) 2015-02-18 2019-01-22 Ii-Vi Incorporated Densely-spaced laser diode configurations
US10297976B2 (en) 2015-05-19 2019-05-21 Ii-Vi Laser Enterprise Gmbh Low thermal resistance, stress-controlled diode laser assemblies
RU162125U8 (ru) * 2015-07-30 2016-07-27 Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" (АО "НИИ "Полюс" им. М.Ф. Стельмаха") Полупроводниковый излучатель
DE102015013511B3 (de) 2015-10-15 2017-03-16 Jenoptik Laser Gmbh Laserstrahlungsquelle und Verfahren zur Herstellung einer Laserstrahlungsquelle und Verwendung eines Lötprozesses
CN105790071A (zh) * 2016-03-22 2016-07-20 西安炬光科技股份有限公司 一种高功率半导体激光器及其制备方法
US10525731B2 (en) 2016-09-08 2020-01-07 Xerox Coporation Image aware laser diode array shutter for reduced incident energy on DMD chip set
US10054857B2 (en) 2016-11-17 2018-08-21 Xerox Corporation Switchable mirror lens system for redirecting laser energy during periods of non-printing
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
DE102017210602B3 (de) 2017-06-23 2018-07-26 Jenoptik Laser Gmbh Diodenlaser mit Einhausung
CN209029679U (zh) * 2017-06-23 2019-06-25 业纳激光有限公司 具有壳体的二极管激光器以及一种用于对表面进行均匀照明的装置
US11406004B2 (en) 2018-08-13 2022-08-02 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver
US11056854B2 (en) 2018-08-14 2021-07-06 Leonardo Electronics Us Inc. Laser assembly and related methods
DE112019003763B4 (de) 2018-10-15 2024-03-28 Panasonic Intellectual Property Management Co., Ltd. Systeme und verfahren gegen das pumpen von thermischen grenzflächenmaterialien in hochleistungslasersystemen
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
DE102019113714B4 (de) 2019-05-23 2024-08-14 Rogers Germany Gmbh Adapterelement zum Anbinden eines Elektronikbauteils an ein Kühlkörperelement, System mit einem solchen Adapterelement und Verfahren zum Herstellen eines solchen Adapterelements
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler
US11025032B2 (en) 2019-06-11 2021-06-01 Trumpf Photonics, Inc. Double sided cooling of laser diode
US12253685B2 (en) 2019-09-16 2025-03-18 Leonardo Electronics Us Inc. Asymmetric input intensity hexagonal homogenizer
CN114825027B (zh) * 2021-01-29 2026-01-13 山东华光光电子股份有限公司 一种用于泵浦的传导冷却半导体激光器封装结构及其封装方法
US11404083B1 (en) 2021-04-27 2022-08-02 Seagate Technology Llc Laser stress mitigation for heat-assisted magnetic recording
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542174C3 (de) 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
US4903274A (en) * 1987-05-19 1990-02-20 Sharp Kabushiki Kaisha Semiconductor laser array device
JPH084187B2 (ja) 1988-02-01 1996-01-17 三菱電機株式会社 半導体レーザ
US4881237A (en) 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
JP2889618B2 (ja) 1988-12-28 1999-05-10 株式会社リコー アレイ型半導体発光装置
US4980893A (en) 1989-05-25 1990-12-25 Xerox Corporation Monolithic high density arrays of independently addressable offset semiconductor laser sources
US5040187A (en) 1990-01-03 1991-08-13 Karpinski Arthur A Monolithic laser diode array
US5284790A (en) * 1990-01-03 1994-02-08 Karpinski Arthur A Method of fabricating monolithic laser diode array
US5031187A (en) 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
US5060237A (en) 1990-12-24 1991-10-22 Eastman Kodak Company Multi-beam laser diode array
US5440577A (en) 1991-02-13 1995-08-08 The University Of Melbourne Semiconductor laser
US5128951A (en) 1991-03-04 1992-07-07 Karpinski Arthur A Laser diode array and method of fabrication thereof
US5105430A (en) 1991-04-09 1992-04-14 The United States Of America As Represented By The United States Department Of Energy Thin planar package for cooling an array of edge-emitting laser diodes
US5212707A (en) * 1991-12-06 1993-05-18 Mcdonnell Douglas Corporation Array of diffraction limited lasers and method of aligning same
US5325384A (en) * 1992-01-09 1994-06-28 Crystallume Structure and method for mounting laser diode arrays
US5311535A (en) 1992-07-28 1994-05-10 Karpinski Arthur A Monolithic laser diode array providing emission from a minor surface thereof
US5394426A (en) 1992-11-13 1995-02-28 Hughes Aircraft Company Diode laser bar assembly
JPH06275714A (ja) 1993-03-22 1994-09-30 Mitsubishi Electric Corp 半導体レーザ装置素子基板、及び半導体レーザ装置の製造方法
JPH06326419A (ja) * 1993-04-20 1994-11-25 Xerox Corp モノリシック半導体発光アレイ
US5305344A (en) 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array
SE501721C2 (sv) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
US5764675A (en) * 1994-06-30 1998-06-09 Juhala; Roland E. Diode laser array
JPH0888431A (ja) 1994-09-16 1996-04-02 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5627850A (en) * 1995-03-20 1997-05-06 Paradigm Lasers, Inc. Laser diode array
US5848083A (en) * 1996-10-24 1998-12-08 Sdl, Inc. Expansion-matched high-thermal-conductivity stress-relieved mounting modules
US5923692A (en) * 1996-10-24 1999-07-13 Sdl, Inc. No wire bond plate (NWBP) packaging architecture for two dimensional stacked diode laser arrays
US6295307B1 (en) * 1997-10-14 2001-09-25 Decade Products, Inc. Laser diode assembly
US5913108A (en) * 1998-04-30 1999-06-15 Cutting Edge Optronics, Inc. Laser diode packaging
US6424667B1 (en) * 1998-12-04 2002-07-23 Jds Uniphase Corporation Solder and material designs to improve resistance to cycling fatigue in laser diode stacks
US6636538B1 (en) * 1999-03-29 2003-10-21 Cutting Edge Optronics, Inc. Laser diode packaging
CN1215349C (zh) * 2000-05-31 2005-08-17 古河电气工业株式会社 半导体激光器模块
JP2002026456A (ja) * 2000-06-30 2002-01-25 Toshiba Corp 半導体装置、半導体レーザ及びその製造方法並びにエッチング方法
US6724792B2 (en) * 2002-09-12 2004-04-20 The Boeing Company Laser diode arrays with replaceable laser diode bars and methods of removing and replacing laser diode bars
US7002443B2 (en) * 2003-06-25 2006-02-21 Cymer, Inc. Method and apparatus for cooling magnetic circuit elements
JP4507560B2 (ja) * 2003-10-30 2010-07-21 日本電気株式会社 薄膜デバイス基板の製造方法
US7286359B2 (en) * 2004-05-11 2007-10-23 The U.S. Government As Represented By The National Security Agency Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing

Also Published As

Publication number Publication date
US20080037602A1 (en) 2008-02-14
EP1887666B1 (de) 2010-07-28
US7864825B2 (en) 2011-01-04
EP1887666A3 (de) 2008-12-24
EP1887666A2 (de) 2008-02-13
DE602007008018D1 (de) 2010-09-09

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