ATE476772T1 - Hochenergie-topemitter-vcsel - Google Patents

Hochenergie-topemitter-vcsel

Info

Publication number
ATE476772T1
ATE476772T1 AT03019870T AT03019870T ATE476772T1 AT E476772 T1 ATE476772 T1 AT E476772T1 AT 03019870 T AT03019870 T AT 03019870T AT 03019870 T AT03019870 T AT 03019870T AT E476772 T1 ATE476772 T1 AT E476772T1
Authority
AT
Austria
Prior art keywords
vcsel
power density
pitch
less
elements
Prior art date
Application number
AT03019870T
Other languages
English (en)
Inventor
Hans-Peter Gauggel
Paul Royo
Original Assignee
Avalon Photonics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avalon Photonics Ag filed Critical Avalon Photonics Ag
Application granted granted Critical
Publication of ATE476772T1 publication Critical patent/ATE476772T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
AT03019870T 2003-09-01 2003-09-01 Hochenergie-topemitter-vcsel ATE476772T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03019870A EP1511138B1 (de) 2003-09-01 2003-09-01 Hochenergie-Topemitter-VCSEL

Publications (1)

Publication Number Publication Date
ATE476772T1 true ATE476772T1 (de) 2010-08-15

Family

ID=34089658

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03019870T ATE476772T1 (de) 2003-09-01 2003-09-01 Hochenergie-topemitter-vcsel

Country Status (5)

Country Link
US (2) US20070091960A1 (de)
EP (1) EP1511138B1 (de)
AT (1) ATE476772T1 (de)
DE (1) DE60333632D1 (de)
WO (1) WO2005022712A1 (de)

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DE102010043058A1 (de) * 2010-10-28 2012-05-03 Robert Bosch Gmbh Laserzündkerze und Betriebsverfahren hierfür
RU2587497C2 (ru) 2011-03-09 2016-06-20 Конинклейке Филипс Н.В. Матрица vcsel с повышенным коэффициентом полезного действия
US8644712B2 (en) 2011-06-23 2014-02-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Opto-electronic transceiver module with housing having thermally conductive protrusion
DE102011085344B4 (de) * 2011-10-27 2022-12-01 Robert Bosch Gmbh Laserlichtquelle
US9038883B2 (en) 2013-09-11 2015-05-26 Princeton Optronics Inc. VCSEL packaging
US9462253B2 (en) * 2013-09-23 2016-10-04 Microsoft Technology Licensing, Llc Optical modules that reduce speckle contrast and diffraction artifacts
CN103730833B (zh) * 2014-01-06 2017-05-31 海特光电有限责任公司 一种二维垂直腔面发射的激光器列阵
US9553423B2 (en) 2015-02-27 2017-01-24 Princeton Optronics Inc. Miniature structured light illuminator
JP6132995B2 (ja) * 2015-05-27 2017-05-24 三菱電機株式会社 レーザモジュールおよびレーザ加工装置
US10630053B2 (en) 2015-07-30 2020-04-21 Optipulse Inc. High power laser grid structure
US10153615B2 (en) * 2015-07-30 2018-12-11 Optipulse, Inc. Rigid high power and high speed lasing grid structures
US9742153B1 (en) 2016-02-23 2017-08-22 Lumentum Operations Llc Compact emitter design for a vertical-cavity surface-emitting laser
US10761195B2 (en) 2016-04-22 2020-09-01 OPSYS Tech Ltd. Multi-wavelength LIDAR system
US10250012B2 (en) 2016-06-02 2019-04-02 Lumentum Operations Llc Variable emission area design for a vertical-cavity surface-emitting laser array
CN110402398B (zh) 2017-03-13 2023-12-01 欧普赛斯技术有限公司 眼睛安全的扫描激光雷达系统
US10514444B2 (en) 2017-07-28 2019-12-24 OPSYS Tech Ltd. VCSEL array LIDAR transmitter with small angular divergence
US10958350B2 (en) 2017-08-11 2021-03-23 Optipulse Inc. Laser grid structures for wireless high speed data transfers
US10374705B2 (en) 2017-09-06 2019-08-06 Optipulse Inc. Method and apparatus for alignment of a line-of-sight communications link
US10355456B2 (en) 2017-09-26 2019-07-16 Lumentum Operations Llc Emitter array with variable spacing between adjacent emitters
KR102425083B1 (ko) * 2017-10-19 2022-07-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체소자, 반도체소자 패키지 및 자동 초점 장치
KR102634870B1 (ko) 2017-11-15 2024-02-13 옵시스 테크 엘티디 잡음 적응형 솔리드-스테이트 lidar 시스템
WO2019164755A1 (en) 2018-02-20 2019-08-29 Ii-Vi Delaware, Inc. Tailoring of high power vcsel arrays
JP7324518B2 (ja) 2018-04-01 2023-08-10 オプシス テック リミテッド 雑音適応型固体ライダシステム
KR102171733B1 (ko) * 2018-04-02 2020-10-29 주식회사 레이아이알 수직 공동 표면 방출 레이저
CN112543875B (zh) 2018-08-03 2024-12-13 欧普赛斯技术有限公司 分布式模块化固态lidar系统
KR102634887B1 (ko) 2019-04-09 2024-02-08 옵시스 테크 엘티디 레이저 제어를 갖는 솔리드-스테이트 lidar 송신기
KR20220003600A (ko) 2019-05-30 2022-01-10 옵시스 테크 엘티디 액추에이터를 사용하는 눈-안전 장거리 lidar 시스템
KR102580722B1 (ko) 2019-06-10 2023-09-22 옵시스 테크 엘티디 눈-안전 장거리 고체 상태 lidar 시스템
WO2020263735A1 (en) 2019-06-25 2020-12-30 OPSYS Tech Ltd. Adaptive multiple-pulse lidar system
TWI881986B (zh) * 2019-07-30 2025-05-01 日商索尼半導體解決方案公司 發光元件及測距裝置
US12222445B2 (en) 2019-07-31 2025-02-11 OPSYS Tech Ltd. High-resolution solid-state LIDAR transmitter

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US5625636A (en) * 1991-10-11 1997-04-29 Bryan; Robert P. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
US5325386A (en) * 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
WO1994017575A1 (de) * 1993-01-22 1994-08-04 Deutsche Forschungsanstalt für Luft- und Raumfahrt e.V. Phasengesteuertes fraktales lasersystem
US5446754A (en) * 1993-11-05 1995-08-29 Photonics Research Incorporated Phased array semiconductor laser
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
JP3279464B2 (ja) * 1995-11-08 2002-04-30 富士ゼロックス株式会社 二次元面発光レーザアレイ、およびその駆動方法および駆動装置
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
JPH11168262A (ja) * 1997-09-30 1999-06-22 Canon Inc 面型光デバイス、その製造方法、および表示装置

Also Published As

Publication number Publication date
DE60333632D1 (de) 2010-09-16
US8247252B2 (en) 2012-08-21
EP1511138B1 (de) 2010-08-04
US20100035372A1 (en) 2010-02-11
WO2005022712A1 (en) 2005-03-10
EP1511138A1 (de) 2005-03-02
US20070091960A1 (en) 2007-04-26

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