ATE482467T1 - Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung - Google Patents
Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösungInfo
- Publication number
- ATE482467T1 ATE482467T1 AT07832605T AT07832605T ATE482467T1 AT E482467 T1 ATE482467 T1 AT E482467T1 AT 07832605 T AT07832605 T AT 07832605T AT 07832605 T AT07832605 T AT 07832605T AT E482467 T1 ATE482467 T1 AT E482467T1
- Authority
- AT
- Austria
- Prior art keywords
- etching
- amorphic
- alkaline
- etching solution
- semiconductor oxides
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/70—Chemical treatments
Landscapes
- Thin Film Transistor (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006328204A JP4785721B2 (ja) | 2006-12-05 | 2006-12-05 | エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液 |
| PCT/JP2007/072880 WO2008069057A2 (en) | 2006-12-05 | 2007-11-20 | Etching amorphous semiconductor oxides with alkaline etchant solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE482467T1 true ATE482467T1 (de) | 2010-10-15 |
Family
ID=39492734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07832605T ATE482467T1 (de) | 2006-12-05 | 2007-11-20 | Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7960289B2 (de) |
| EP (1) | EP2100326B1 (de) |
| JP (1) | JP4785721B2 (de) |
| KR (1) | KR101102315B1 (de) |
| CN (1) | CN101548367B (de) |
| AT (1) | ATE482467T1 (de) |
| DE (1) | DE602007009424D1 (de) |
| WO (1) | WO2008069057A2 (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| US8193045B2 (en) * | 2007-05-31 | 2012-06-05 | Canon Kabushiki Kaisha | Manufacturing method of thin film transistor using oxide semiconductor |
| KR20100098409A (ko) * | 2007-11-22 | 2010-09-06 | 간또 가가꾸 가부시끼가이샤 | 에칭액 조성물 |
| KR101463028B1 (ko) * | 2008-06-30 | 2014-11-19 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터의 제조방법 |
| JP5004885B2 (ja) * | 2008-07-15 | 2012-08-22 | スタンレー電気株式会社 | 半導体構造の加工方法 |
| KR101911386B1 (ko) * | 2008-09-19 | 2018-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| CN102210025A (zh) * | 2008-11-07 | 2011-10-05 | 株式会社半导体能源研究所 | 半导体器件 |
| TWI536577B (zh) * | 2008-11-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP2010129556A (ja) * | 2008-11-25 | 2010-06-10 | Dainippon Printing Co Ltd | トランジスタ素子およびその製造方法 |
| JP5528734B2 (ja) | 2009-07-09 | 2014-06-25 | 富士フイルム株式会社 | 電子素子及びその製造方法、表示装置、並びにセンサー |
| KR101754701B1 (ko) | 2009-10-09 | 2017-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
| KR102117506B1 (ko) | 2009-12-04 | 2020-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| EP2507823B1 (de) | 2009-12-04 | 2018-09-26 | Semiconductor Energy Laboratory Co. Ltd. | Herstellungsverfahren für halbleiterbauelement |
| US20130140552A1 (en) * | 2010-02-26 | 2013-06-06 | Sharp Kabushiki Kaisha | Semiconductor device, method for manufacturing same, and display device |
| US20130020641A1 (en) * | 2010-03-16 | 2013-01-24 | Sharp Kabushiki Kaisha | Substrate for display panel, manufacturing method of same, display panel, and display device |
| JP2012124446A (ja) * | 2010-04-07 | 2012-06-28 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
| JP2016026389A (ja) * | 2010-04-07 | 2016-02-12 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
| US8723174B2 (en) | 2010-06-02 | 2014-05-13 | Sharp Kabushiki Kaisha | Thin film transistor, contact structure, substrate, display device, and methods for manufacturing the same |
| KR101193196B1 (ko) * | 2010-07-07 | 2012-10-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| WO2012008192A1 (ja) * | 2010-07-15 | 2012-01-19 | シャープ株式会社 | 回路基板、表示装置、及び、回路基板の製造方法 |
| JP5931573B2 (ja) * | 2011-05-13 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5957835B2 (ja) * | 2011-09-28 | 2016-07-27 | 株式会社Sumco | 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法 |
| CN103811417B (zh) * | 2012-11-08 | 2016-07-27 | 瀚宇彩晶股份有限公司 | 像素结构的制作方法 |
| WO2014158955A1 (en) * | 2013-03-12 | 2014-10-02 | Applied Materials, Inc. | Pinhole evaluation method of dielectric films for metal oxide semiconductor tft |
| CN103337462B (zh) * | 2013-06-13 | 2017-03-22 | 北京大学深圳研究生院 | 一种薄膜晶体管的制备方法 |
| TWI536464B (zh) | 2014-01-15 | 2016-06-01 | 友達光電股份有限公司 | 電晶體及其製造方法 |
| WO2015112419A1 (en) | 2014-01-23 | 2015-07-30 | 3M Innovative Properties Company | Method for patterning a microstructure |
| US20170060282A1 (en) * | 2014-03-25 | 2017-03-02 | 3M Innovative Properties Company | Method of selectively etching a metal layer from a microstructure |
| WO2016028454A1 (en) | 2014-08-18 | 2016-02-25 | 3M Innovative Properties Company | Conductive layered structure and methods of making same |
| US10242885B2 (en) * | 2017-05-26 | 2019-03-26 | Applied Materials, Inc. | Selective dry etching of metal films comprising multiple metal oxides |
| WO2019046106A1 (en) * | 2017-08-29 | 2019-03-07 | Micron Technology, Inc. | DEVICES AND SYSTEMS WITH CHAIN DRIVERS COMPRISING HIGH BANNED MATERIAL AND METHODS OF FORMATION |
| CN110044803A (zh) * | 2019-04-23 | 2019-07-23 | 蚌埠中光电科技有限公司 | 一种测量玻璃耐hf蚀刻性能的方法 |
| CN114669292B (zh) * | 2022-04-20 | 2023-08-11 | 东华大学 | 单原子原位负载非晶态氧化物陶瓷纳米纤维的制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4871692A (en) * | 1988-09-30 | 1989-10-03 | Lee Hong H | Passivation of group III-V surfaces |
| US5174855A (en) | 1989-04-28 | 1992-12-29 | Dainippon Screen Mfg. Co. Ltd. | Surface treating apparatus and method using vapor |
| US6123824A (en) * | 1996-12-13 | 2000-09-26 | Canon Kabushiki Kaisha | Process for producing photo-electricity generating device |
| TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
| JP3475898B2 (ja) | 2000-03-14 | 2003-12-10 | 松下電器産業株式会社 | 化合物半導体膜のエッチング方法 |
| CN1400638A (zh) | 2001-08-06 | 2003-03-05 | 旺宏电子股份有限公司 | 可去除蚀刻制程后的残留聚合物及降低氧化物损失的方法 |
| JP4048278B2 (ja) * | 2001-12-21 | 2008-02-20 | ダイムラー・アクチェンゲゼルシャフト | 自動車用空調システムの構築及び制御 |
| KR100783608B1 (ko) * | 2002-02-26 | 2007-12-07 | 삼성전자주식회사 | 인듐징크옥사이드 식각액 조성물 및 이를 이용한 액정표시 장치의 박막 트랜지스터 기판의 제조방법 |
| US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4554152B2 (ja) * | 2002-12-19 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体チップの作製方法 |
| KR100951348B1 (ko) * | 2003-04-04 | 2010-04-08 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 및 그 박막 트랜지스터 기판 |
| JP2005223049A (ja) | 2004-02-04 | 2005-08-18 | Ricoh Co Ltd | 半導体装置、半導体装置の製造方法、および表示装置 |
| JP2005258115A (ja) | 2004-03-12 | 2005-09-22 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ型基板及び薄膜トランジスタ型液晶表示装置及び薄膜トランジスタ型基板の製造方法 |
| EP1815530B1 (de) | 2004-11-10 | 2021-02-17 | Canon Kabushiki Kaisha | Feldeffekttransistor mit einem amorphen oxid |
| JP2006269469A (ja) * | 2005-03-22 | 2006-10-05 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP5328083B2 (ja) * | 2006-08-01 | 2013-10-30 | キヤノン株式会社 | 酸化物のエッチング方法 |
-
2006
- 2006-12-05 JP JP2006328204A patent/JP4785721B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-20 DE DE602007009424T patent/DE602007009424D1/de active Active
- 2007-11-20 US US12/514,209 patent/US7960289B2/en not_active Expired - Fee Related
- 2007-11-20 CN CN2007800450980A patent/CN101548367B/zh not_active Expired - Fee Related
- 2007-11-20 KR KR1020097013545A patent/KR101102315B1/ko not_active Expired - Fee Related
- 2007-11-20 EP EP07832605A patent/EP2100326B1/de not_active Not-in-force
- 2007-11-20 AT AT07832605T patent/ATE482467T1/de not_active IP Right Cessation
- 2007-11-20 WO PCT/JP2007/072880 patent/WO2008069057A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20100035378A1 (en) | 2010-02-11 |
| JP4785721B2 (ja) | 2011-10-05 |
| WO2008069057A2 (en) | 2008-06-12 |
| WO2008069057A3 (en) | 2008-12-04 |
| EP2100326B1 (de) | 2010-09-22 |
| KR20090085699A (ko) | 2009-08-07 |
| CN101548367A (zh) | 2009-09-30 |
| CN101548367B (zh) | 2012-05-16 |
| US7960289B2 (en) | 2011-06-14 |
| JP2008141113A (ja) | 2008-06-19 |
| DE602007009424D1 (de) | 2010-11-04 |
| KR101102315B1 (ko) | 2012-01-03 |
| EP2100326A2 (de) | 2009-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |