ATE482472T1 - Dünnschichtsolarzelle auf glas mit siliziumdioxid-texturierung und herstellungsverfahren - Google Patents
Dünnschichtsolarzelle auf glas mit siliziumdioxid-texturierung und herstellungsverfahrenInfo
- Publication number
- ATE482472T1 ATE482472T1 AT99957710T AT99957710T ATE482472T1 AT E482472 T1 ATE482472 T1 AT E482472T1 AT 99957710 T AT99957710 T AT 99957710T AT 99957710 T AT99957710 T AT 99957710T AT E482472 T1 ATE482472 T1 AT E482472T1
- Authority
- AT
- Austria
- Prior art keywords
- glass
- solar cell
- thin film
- texturing
- silicon dioxide
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3636—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing silicon, hydrogenated silicon or a silicide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3642—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing a metal layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/31—Pre-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Glass (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPP6997A AUPP699798A0 (en) | 1998-11-06 | 1998-11-06 | Thin films with light trapping |
| PCT/AU1999/000980 WO2000028603A1 (en) | 1998-11-06 | 1999-11-08 | TEXTURING OF GLASS BY SiO2 FILM |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE482472T1 true ATE482472T1 (de) | 2010-10-15 |
Family
ID=3811210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99957710T ATE482472T1 (de) | 1998-11-06 | 1999-11-08 | Dünnschichtsolarzelle auf glas mit siliziumdioxid-texturierung und herstellungsverfahren |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6420647B1 (de) |
| EP (1) | EP1142031B1 (de) |
| JP (1) | JP4532742B2 (de) |
| CN (1) | CN1174494C (de) |
| AT (1) | ATE482472T1 (de) |
| AU (3) | AUPP699798A0 (de) |
| DE (1) | DE69942791D1 (de) |
| ES (1) | ES2351034T3 (de) |
| WO (2) | WO2000028603A1 (de) |
Families Citing this family (82)
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| JP2003124491A (ja) * | 2001-10-15 | 2003-04-25 | Sharp Corp | 薄膜太陽電池モジュール |
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| IL162190A0 (en) * | 2001-11-29 | 2005-11-20 | Origin Energy Solar Pty Ltd | Semiconductor texturing process |
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| CN114105488A (zh) * | 2020-08-26 | 2022-03-01 | 上海西源新能源技术有限公司 | 中性色双层减反射镀膜及具有该镀膜的玻璃及其制备方法 |
| CN116727163B (zh) * | 2023-08-10 | 2023-10-20 | 常州福睿新材料科技有限公司 | 一种聚四氟乙烯板材表层轧碾涂布装置及其加工工艺 |
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| US3653970A (en) * | 1969-04-30 | 1972-04-04 | Nasa | Method of coating solar cell with borosilicate glass and resultant product |
| DE3300400A1 (de) | 1982-01-06 | 1983-07-14 | Canon K.K., Tokyo | Halbleiterbauelement |
| US4554727A (en) * | 1982-08-04 | 1985-11-26 | Exxon Research & Engineering Company | Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces |
| JPS59127879A (ja) * | 1983-01-12 | 1984-07-23 | Semiconductor Energy Lab Co Ltd | 光電変換装置およびその作製方法 |
| JPH0680837B2 (ja) * | 1983-08-29 | 1994-10-12 | 通商産業省工業技術院長 | 光路を延長した光電変換素子 |
| JPS6068663A (ja) | 1983-09-26 | 1985-04-19 | Komatsu Denshi Kinzoku Kk | アモルフアスシリコン太陽電池 |
| US4956685A (en) * | 1984-12-21 | 1990-09-11 | Licentia Patent-Verwaltungs Gmbh | Thin film solar cell having a concave n-i-p structure |
| JPH0614554B2 (ja) | 1985-03-22 | 1994-02-23 | 工業技術院長 | 薄膜太陽電池の製造方法 |
| US4994116A (en) * | 1985-05-28 | 1991-02-19 | Donaldson Thomas W | Wheel device for removing fluid from a fluid carrying chain |
| US4732621A (en) | 1985-06-17 | 1988-03-22 | Sanyo Electric Co., Ltd. | Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer |
| US4675468A (en) | 1985-12-20 | 1987-06-23 | The Standard Oil Company | Stable contact between current collector grid and transparent conductive layer |
| JPS63119275A (ja) * | 1986-11-07 | 1988-05-23 | Sumitomo Bakelite Co Ltd | 非晶質シリコン又は薄膜太陽電池 |
| US4808462A (en) * | 1987-05-22 | 1989-02-28 | Glasstech Solar, Inc. | Solar cell substrate |
| JPH01106472A (ja) * | 1987-10-20 | 1989-04-24 | Sanyo Electric Co Ltd | 太陽電池 |
| US4904526A (en) * | 1988-08-29 | 1990-02-27 | 3M Company | Electrically conductive metal oxide coatings |
| JP2663414B2 (ja) | 1988-12-30 | 1997-10-15 | 太陽誘電株式会社 | 非晶質半導体太陽電池 |
| JPH04196364A (ja) * | 1990-11-28 | 1992-07-16 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| JP3222945B2 (ja) * | 1992-09-11 | 2001-10-29 | 三洋電機株式会社 | 光起電力装置の製造方法 |
| AUPN679295A0 (en) * | 1995-11-23 | 1995-12-14 | Unisearch Limited | Conformal films for light-trapping in thin silicon solar cells |
| JPH10283847A (ja) * | 1997-04-01 | 1998-10-23 | Sharp Corp | 透明導電膜 |
| JP3416024B2 (ja) * | 1997-05-23 | 2003-06-16 | シャープ株式会社 | 薄膜太陽電池における微粒子塗布膜 |
| JPH1140829A (ja) * | 1997-07-16 | 1999-02-12 | Nisshin Steel Co Ltd | 太陽電池用絶縁基板及びその製造方法 |
| EP0911884B1 (de) * | 1997-10-27 | 2005-02-09 | Sharp Kabushiki Kaisha | Photoelektrische Wandler und sein Herstellungsverfahren |
| JP2001177130A (ja) * | 1999-12-16 | 2001-06-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュール |
-
1998
- 1998-11-06 AU AUPP6997A patent/AUPP699798A0/en not_active Abandoned
-
1999
- 1999-11-08 AT AT99957710T patent/ATE482472T1/de not_active IP Right Cessation
- 1999-11-08 JP JP2000581701A patent/JP4532742B2/ja not_active Expired - Fee Related
- 1999-11-08 EP EP99957710A patent/EP1142031B1/de not_active Expired - Lifetime
- 1999-11-08 US US09/831,234 patent/US6420647B1/en not_active Expired - Fee Related
- 1999-11-08 AU AU15012/00A patent/AU1501200A/en not_active Abandoned
- 1999-11-08 WO PCT/AU1999/000980 patent/WO2000028603A1/en not_active Ceased
- 1999-11-08 WO PCT/AU1999/000979 patent/WO2000028602A1/en not_active Ceased
- 1999-11-08 CN CNB998130346A patent/CN1174494C/zh not_active Expired - Fee Related
- 1999-11-08 US US09/831,236 patent/US6538195B1/en not_active Expired - Fee Related
- 1999-11-08 ES ES99957710T patent/ES2351034T3/es not_active Expired - Lifetime
- 1999-11-08 AU AU15332/00A patent/AU755546B2/en not_active Ceased
- 1999-11-08 DE DE69942791T patent/DE69942791D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4532742B2 (ja) | 2010-08-25 |
| AU1533200A (en) | 2000-05-29 |
| WO2000028603A1 (en) | 2000-05-18 |
| JP2002529937A (ja) | 2002-09-10 |
| AU1501200A (en) | 2000-05-29 |
| AU755546B2 (en) | 2002-12-12 |
| ES2351034T3 (es) | 2011-01-31 |
| EP1142031A4 (de) | 2007-11-21 |
| AUPP699798A0 (en) | 1998-12-03 |
| EP1142031B1 (de) | 2010-09-22 |
| WO2000028602A1 (en) | 2000-05-18 |
| US6420647B1 (en) | 2002-07-16 |
| DE69942791D1 (de) | 2010-11-04 |
| EP1142031A1 (de) | 2001-10-10 |
| US6538195B1 (en) | 2003-03-25 |
| CN1174494C (zh) | 2004-11-03 |
| CN1325550A (zh) | 2001-12-05 |
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| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |