ATE482501T1 - Dfb laser mit photonischer bandlücke und verteiltem reflektor - Google Patents

Dfb laser mit photonischer bandlücke und verteiltem reflektor

Info

Publication number
ATE482501T1
ATE482501T1 AT03763926T AT03763926T ATE482501T1 AT E482501 T1 ATE482501 T1 AT E482501T1 AT 03763926 T AT03763926 T AT 03763926T AT 03763926 T AT03763926 T AT 03763926T AT E482501 T1 ATE482501 T1 AT E482501T1
Authority
AT
Austria
Prior art keywords
distributed reflector
band gap
photonic band
dfb laser
filling material
Prior art date
Application number
AT03763926T
Other languages
English (en)
Inventor
Bruno Thedrez
Original Assignee
Oclaro North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oclaro North America Inc filed Critical Oclaro North America Inc
Application granted granted Critical
Publication of ATE482501T1 publication Critical patent/ATE482501T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT03763926T 2002-07-08 2003-07-04 Dfb laser mit photonischer bandlücke und verteiltem reflektor ATE482501T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0208543A FR2842037B1 (fr) 2002-07-08 2002-07-08 Laser dfb a reflecteur distribue a bande photonique interdite
PCT/FR2003/002063 WO2004008591A2 (fr) 2002-07-08 2003-07-04 Laser dfb à réflecteur distribué à bande photonique interdite

Publications (1)

Publication Number Publication Date
ATE482501T1 true ATE482501T1 (de) 2010-10-15

Family

ID=29725258

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03763926T ATE482501T1 (de) 2002-07-08 2003-07-04 Dfb laser mit photonischer bandlücke und verteiltem reflektor

Country Status (7)

Country Link
US (1) US7254154B2 (de)
EP (1) EP1520327B1 (de)
AT (1) ATE482501T1 (de)
AU (1) AU2003263262A1 (de)
DE (1) DE60334298D1 (de)
FR (1) FR2842037B1 (de)
WO (1) WO2004008591A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189669A1 (en) * 2004-07-22 2007-08-16 Maurizio Tormen Integrated wavelength selective grating-based filter
EP1769276A1 (de) * 2004-07-22 2007-04-04 Pirelli & C. S.p.A. Optische einrichtung mit einem vergrabenen gitter mit luftgefüllten lücken und verfahren zu ihrer realisierung
KR101423721B1 (ko) * 2007-10-09 2014-07-31 서울바이오시스 주식회사 나노 패턴들을 갖는 레이저 다이오드 및 그것을 제조하는방법
EP3879642B1 (de) * 2020-03-13 2025-09-24 Advanced Photonics Applications GmbH Monomodiger halbleiterlaser mit phasenkontrolle
CN113410752A (zh) * 2020-03-17 2021-09-17 富士胶片商业创新有限公司 激光元件阵列、发光及光学装置、测量及信息处理装置
WO2022019143A1 (ja) * 2020-07-20 2022-01-27 日本碍子株式会社 光走査素子
GB2627952A (en) * 2023-03-08 2024-09-11 Vector Photonics Ltd Edge emitting laser system
CN119447990B (zh) * 2025-01-09 2025-05-16 浙江华辰芯光技术有限公司 一种光子晶体边发射激光器及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61218191A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体レ−ザ素子およびその製造方法
JP2507685B2 (ja) * 1990-07-25 1996-06-12 株式会社東芝 半導体レ―ザ
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
US6674778B1 (en) * 2002-01-09 2004-01-06 Sandia Corporation Electrically pumped edge-emitting photonic bandgap semiconductor laser
US6744804B2 (en) * 2002-07-18 2004-06-01 Finisar Corporation Edge emitting lasers using photonic crystals

Also Published As

Publication number Publication date
DE60334298D1 (de) 2010-11-04
FR2842037A1 (fr) 2004-01-09
WO2004008591A2 (fr) 2004-01-22
FR2842037B1 (fr) 2004-10-01
WO2004008591A3 (fr) 2004-04-15
AU2003263262A8 (en) 2004-02-02
EP1520327B1 (de) 2010-09-22
US20050232329A1 (en) 2005-10-20
US7254154B2 (en) 2007-08-07
EP1520327A2 (de) 2005-04-06
AU2003263262A1 (en) 2004-02-02

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