ATE484058T1 - Magnetoresistives bauelement - Google Patents

Magnetoresistives bauelement

Info

Publication number
ATE484058T1
ATE484058T1 AT06777982T AT06777982T ATE484058T1 AT E484058 T1 ATE484058 T1 AT E484058T1 AT 06777982 T AT06777982 T AT 06777982T AT 06777982 T AT06777982 T AT 06777982T AT E484058 T1 ATE484058 T1 AT E484058T1
Authority
AT
Austria
Prior art keywords
layers
elements
magnetizations
parallel
cofe
Prior art date
Application number
AT06777982T
Other languages
English (en)
Inventor
Bernard Dieny
Virgile Javerliac
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE484058T1 publication Critical patent/ATE484058T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
AT06777982T 2005-07-27 2006-07-26 Magnetoresistives bauelement ATE484058T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0508001A FR2889348B1 (fr) 2005-07-27 2005-07-27 Dispositif magnetoresistif
PCT/EP2006/064671 WO2007014888A1 (en) 2005-07-27 2006-07-26 A magnetoresistive device

Publications (1)

Publication Number Publication Date
ATE484058T1 true ATE484058T1 (de) 2010-10-15

Family

ID=36143308

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06777982T ATE484058T1 (de) 2005-07-27 2006-07-26 Magnetoresistives bauelement

Country Status (7)

Country Link
US (1) US7944736B2 (de)
EP (1) EP1911031B1 (de)
JP (1) JP5101501B2 (de)
AT (1) ATE484058T1 (de)
DE (1) DE602006017379D1 (de)
FR (1) FR2889348B1 (de)
WO (1) WO2007014888A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0918016D0 (en) 2009-10-14 2009-12-02 Univ Portsmouth Biosensor
US8476925B2 (en) 2010-08-01 2013-07-02 Jian-Gang (Jimmy) Zhu Magnetic switching cells and methods of making and operating same
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
US8422287B2 (en) * 2010-09-09 2013-04-16 Magic Technologies, Inc. Pulse field assisted spin momentum transfer MRAM design
US8830734B2 (en) * 2010-11-19 2014-09-09 Seagate Technology Llc Using a nearby cell to provide field assisted switching in a magnetic memory array
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
US9812637B2 (en) 2015-06-05 2017-11-07 Allegro Microsystems, Llc Spin valve magnetoresistance element with improved response to magnetic fields
JP2017054936A (ja) * 2015-09-09 2017-03-16 株式会社東芝 磁気メモリ素子および磁気メモリ
JP2017143175A (ja) * 2016-02-10 2017-08-17 株式会社東芝 磁気記憶装置
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10411184B1 (en) * 2018-03-02 2019-09-10 Samsung Electronics Co., Ltd. Vertical spin orbit torque devices
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3661652B2 (ja) * 2002-02-15 2005-06-15 ソニー株式会社 磁気抵抗効果素子および磁気メモリ装置
JP2003258207A (ja) * 2002-03-06 2003-09-12 Sony Corp 磁気ランダムアクセスメモリおよびその動作方法およびその製造方法
JP4729836B2 (ja) * 2003-03-28 2011-07-20 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4080982B2 (ja) * 2003-10-09 2008-04-23 株式会社東芝 磁気メモリ
US7120048B2 (en) * 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
US7116575B1 (en) * 2005-03-23 2006-10-03 Honeywell International Inc. Architectures for CPP ring shaped (RS) devices

Also Published As

Publication number Publication date
EP1911031A1 (de) 2008-04-16
FR2889348B1 (fr) 2008-09-12
DE602006017379D1 (de) 2010-11-18
JP5101501B2 (ja) 2012-12-19
FR2889348A1 (fr) 2007-02-02
JP2009503833A (ja) 2009-01-29
US20090135526A1 (en) 2009-05-28
US7944736B2 (en) 2011-05-17
WO2007014888A1 (en) 2007-02-08
EP1911031B1 (de) 2010-10-06

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