ATE484832T1 - Verfahren zur verringerung der stromaufnahme bei erfassung eines resistiven speichers - Google Patents
Verfahren zur verringerung der stromaufnahme bei erfassung eines resistiven speichersInfo
- Publication number
- ATE484832T1 ATE484832T1 AT04759676T AT04759676T ATE484832T1 AT E484832 T1 ATE484832 T1 AT E484832T1 AT 04759676 T AT04759676 T AT 04759676T AT 04759676 T AT04759676 T AT 04759676T AT E484832 T1 ATE484832 T1 AT E484832T1
- Authority
- AT
- Austria
- Prior art keywords
- resistive memory
- detecting
- sensing
- current consumption
- reducing current
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/400,620 US6954392B2 (en) | 2003-03-28 | 2003-03-28 | Method for reducing power consumption when sensing a resistive memory |
| PCT/US2004/008404 WO2004095463A1 (en) | 2003-03-28 | 2004-03-18 | Method for reducing power consumption when sensing a resistive memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE484832T1 true ATE484832T1 (de) | 2010-10-15 |
Family
ID=32989249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04759676T ATE484832T1 (de) | 2003-03-28 | 2004-03-18 | Verfahren zur verringerung der stromaufnahme bei erfassung eines resistiven speichers |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6954392B2 (de) |
| EP (1) | EP1642298B1 (de) |
| JP (1) | JP2006521659A (de) |
| KR (1) | KR101031028B1 (de) |
| CN (1) | CN1795508A (de) |
| AT (1) | ATE484832T1 (de) |
| DE (1) | DE602004029576D1 (de) |
| TW (1) | TWI247316B (de) |
| WO (1) | WO2004095463A1 (de) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6826102B2 (en) * | 2002-05-16 | 2004-11-30 | Micron Technology, Inc. | Noise resistant small signal sensing circuit for a memory device |
| US7221605B2 (en) * | 2004-08-31 | 2007-05-22 | Micron Technology, Inc. | Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets |
| US7236415B2 (en) * | 2004-09-01 | 2007-06-26 | Micron Technology, Inc. | Sample and hold memory sense amplifier |
| JP4993118B2 (ja) * | 2005-02-08 | 2012-08-08 | 日本電気株式会社 | 半導体記憶装置及び半導体記憶装置の読み出し方法 |
| KR100868035B1 (ko) | 2006-03-13 | 2008-11-10 | 키몬다 아게 | 메모리 회로, 메모리 회로를 동작시키는 방법, 메모리디바이스 및 메모리 디바이스를 생성하는 방법 |
| US7397689B2 (en) * | 2006-08-09 | 2008-07-08 | Micron Technology, Inc. | Resistive memory device |
| KR101258983B1 (ko) * | 2006-09-19 | 2013-04-29 | 삼성전자주식회사 | 가변저항 소자를 이용한 반도체 메모리 장치 및 그 동작방법 |
| US8085615B2 (en) | 2006-12-29 | 2011-12-27 | Spansion Llc | Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line |
| US8117520B2 (en) * | 2007-06-15 | 2012-02-14 | Micron Technology, Inc. | Error detection for multi-bit memory |
| US7830729B2 (en) * | 2007-06-15 | 2010-11-09 | Micron Technology, Inc. | Digital filters with memory |
| US8068367B2 (en) * | 2007-06-15 | 2011-11-29 | Micron Technology, Inc. | Reference current sources |
| US7969783B2 (en) * | 2007-06-15 | 2011-06-28 | Micron Technology, Inc. | Memory with correlated resistance |
| US7817073B2 (en) * | 2007-06-15 | 2010-10-19 | Micron Technology, Inc. | Integrators for delta-sigma modulators |
| US7667632B2 (en) * | 2007-06-15 | 2010-02-23 | Micron Technology, Inc. | Quantizing circuits for semiconductor devices |
| US7768868B2 (en) * | 2007-06-15 | 2010-08-03 | Micron Technology, Inc. | Digital filters for semiconductor devices |
| US7839703B2 (en) | 2007-06-15 | 2010-11-23 | Micron Technology, Inc. | Subtraction circuits and digital-to-analog converters for semiconductor devices |
| US7818638B2 (en) * | 2007-06-15 | 2010-10-19 | Micron Technology, Inc. | Systems and devices including memory with built-in self test and methods of making and using the same |
| US7733262B2 (en) * | 2007-06-15 | 2010-06-08 | Micron Technology, Inc. | Quantizing circuits with variable reference signals |
| US9135962B2 (en) | 2007-06-15 | 2015-09-15 | Micron Technology, Inc. | Comparators for delta-sigma modulators |
| US7538702B2 (en) | 2007-06-15 | 2009-05-26 | Micron Technology, Inc. | Quantizing circuits with variable parameters |
| WO2009050920A1 (ja) * | 2007-10-18 | 2009-04-23 | Sharp Kabushiki Kaisha | ドライバモノリシック型表示装置 |
| JP5525451B2 (ja) | 2007-11-16 | 2014-06-18 | アレグロ・マイクロシステムズ・エルエルシー | 複数の直列接続された発光ダイオード列を駆動するための電子回路 |
| US7561484B2 (en) * | 2007-12-13 | 2009-07-14 | Spansion Llc | Reference-free sampled sensing |
| US7864609B2 (en) * | 2008-06-30 | 2011-01-04 | Micron Technology, Inc. | Methods for determining resistance of phase change memory elements |
| KR20100039593A (ko) * | 2008-10-08 | 2010-04-16 | 삼성전자주식회사 | 메모리 셀의 저항 산포를 측정할 수 있는 테스트 회로 및 상기 테스트 회로를 포함하는 반도체 시스템 |
| US8018753B2 (en) * | 2008-10-30 | 2011-09-13 | Hewlett-Packard Development Company, L.P. | Memory module including voltage sense monitoring interface |
| KR101094944B1 (ko) * | 2009-12-24 | 2011-12-15 | 주식회사 하이닉스반도체 | 센싱 전압을 제어하는 비휘발성 반도체 집적 회로 |
| WO2012067667A1 (en) | 2010-11-19 | 2012-05-24 | Hewlett-Packard Development Company, L.P. | Circuit and method for reading a resistive switching device in an array |
| US8331164B2 (en) | 2010-12-06 | 2012-12-11 | International Business Machines Corporation | Compact low-power asynchronous resistor-based memory read operation and circuit |
| US8692482B2 (en) | 2010-12-13 | 2014-04-08 | Allegro Microsystems, Llc | Circuitry to control a switching regulator |
| US8837200B2 (en) * | 2011-06-27 | 2014-09-16 | Panasonic Corporation | Nonvolatile semiconductor memory device and read method for the same |
| US9265104B2 (en) | 2011-07-06 | 2016-02-16 | Allegro Microsystems, Llc | Electronic circuits and techniques for maintaining a consistent power delivered to a load |
| US9155156B2 (en) | 2011-07-06 | 2015-10-06 | Allegro Microsystems, Llc | Electronic circuits and techniques for improving a short duty cycle behavior of a DC-DC converter driving a load |
| US8957607B2 (en) | 2012-08-22 | 2015-02-17 | Allergo Microsystems, LLC | DC-DC converter using hysteretic control and associated methods |
| US9144126B2 (en) | 2012-08-22 | 2015-09-22 | Allegro Microsystems, Llc | LED driver having priority queue to track dominant LED channel |
| TW201532327A (zh) * | 2013-11-19 | 2015-08-16 | 威廉馬許萊斯大學 | 用於改良ＳｉＯｘ切換元件之效能的多孔ＳｉＯｘ材料 |
| US9831424B2 (en) | 2014-07-25 | 2017-11-28 | William Marsh Rice University | Nanoporous metal-oxide memory |
| JP6273184B2 (ja) * | 2014-09-03 | 2018-01-31 | 東芝メモリ株式会社 | 抵抗変化型記憶装置及びその製造方法 |
| KR101753366B1 (ko) | 2014-10-29 | 2017-07-03 | 삼성전자 주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법 |
| CN105675024B (zh) * | 2016-01-04 | 2018-01-02 | 东南大学 | 一种阻性传感器阵列的数据读出方法、装置 |
| US10295612B2 (en) * | 2016-04-05 | 2019-05-21 | Apple Inc. | Electronic device with resistive sensor array |
| CN111630482B (zh) * | 2017-12-31 | 2024-04-12 | 德州仪器公司 | 扩展感测多点触摸系统 |
| JP2019169214A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
| US10825509B2 (en) * | 2018-09-28 | 2020-11-03 | Intel Corporation | Full-rail digital read compute-in-memory circuit |
| US10714185B2 (en) | 2018-10-24 | 2020-07-14 | Micron Technology, Inc. | Event counters for memory operations |
| EP3674991B1 (de) * | 2018-12-28 | 2024-07-17 | IMEC vzw | Neuronales multibit-netzwerk |
| KR102656527B1 (ko) * | 2019-04-05 | 2024-04-15 | 삼성전자주식회사 | 메모리 장치 |
| CN112349321B (zh) * | 2019-08-06 | 2024-03-12 | 上海磁宇信息科技有限公司 | 一种使用公共参考电压的磁性随机存储器芯片架构 |
| US11790977B2 (en) * | 2020-07-20 | 2023-10-17 | Mediatek Inc. | Transmitter with voltage level adjustment mechanism in memory controller |
| FR3117660B1 (fr) * | 2020-12-16 | 2023-12-22 | Commissariat Energie Atomique | Mémoire comprenant une matrice de cellules mémoires résistives, et procédé d’interfaçage associé |
| US11475926B1 (en) * | 2021-06-10 | 2022-10-18 | Globalfoundries U.S. Inc. | Sense amplifier circuit for current sensing |
| US12205671B2 (en) | 2022-07-27 | 2025-01-21 | Globalfoundries U.S. Inc. | Circuit structure and related method to compensate for sense amplifier leakage |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US80648A (en) * | 1868-08-04 | Charles h | ||
| US39309A (en) * | 1863-07-21 | Improvement in rice-cleaners | ||
| US85413A (en) * | 1868-12-29 | van e t ten | ||
| US101758A (en) * | 1870-04-12 | Improvement in table for changing gauge of railway-car trucks | ||
| US5614856A (en) | 1996-03-11 | 1997-03-25 | Micron Technology, Inc. | Waveshaping circuit generating two rising slopes for a sense amplifier pulldown device |
| US6219273B1 (en) | 1998-03-02 | 2001-04-17 | California Institute Of Technology | Integrated semiconductor-magnetic random access memory system |
| US6584589B1 (en) | 2000-02-04 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | Self-testing of magneto-resistive memory arrays |
| US6191989B1 (en) * | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
| US6396733B1 (en) | 2000-07-17 | 2002-05-28 | Micron Technology, Inc. | Magneto-resistive memory having sense amplifier with offset control |
| US6317375B1 (en) | 2000-08-31 | 2001-11-13 | Hewlett-Packard Company | Method and apparatus for reading memory cells of a resistive cross point array |
| US6456525B1 (en) | 2000-09-15 | 2002-09-24 | Hewlett-Packard Company | Short-tolerant resistive cross point array |
| KR100624298B1 (ko) | 2000-12-22 | 2006-09-13 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 센싱 회로 |
| US6434049B1 (en) | 2000-12-29 | 2002-08-13 | Intel Corporation | Sample and hold voltage reference source |
| US6567297B2 (en) | 2001-02-01 | 2003-05-20 | Micron Technology, Inc. | Method and apparatus for sensing resistance values of memory cells |
| US6385079B1 (en) | 2001-08-31 | 2002-05-07 | Hewlett-Packard Company | Methods and structure for maximizing signal to noise ratio in resistive array |
| JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
| US6891768B2 (en) * | 2002-11-13 | 2005-05-10 | Hewlett-Packard Development Company, L.P. | Power-saving reading of magnetic memory devices |
-
2003
- 2003-03-28 US US10/400,620 patent/US6954392B2/en not_active Expired - Lifetime
-
2004
- 2004-03-18 DE DE602004029576T patent/DE602004029576D1/de not_active Expired - Lifetime
- 2004-03-18 EP EP04759676A patent/EP1642298B1/de not_active Expired - Lifetime
- 2004-03-18 KR KR1020057018329A patent/KR101031028B1/ko not_active Expired - Lifetime
- 2004-03-18 WO PCT/US2004/008404 patent/WO2004095463A1/en not_active Ceased
- 2004-03-18 CN CNA2004800143279A patent/CN1795508A/zh active Pending
- 2004-03-18 AT AT04759676T patent/ATE484832T1/de not_active IP Right Cessation
- 2004-03-18 JP JP2006507354A patent/JP2006521659A/ja active Pending
- 2004-03-26 TW TW093108343A patent/TWI247316B/zh not_active IP Right Cessation
- 2004-08-23 US US10/922,921 patent/US6885580B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1795508A (zh) | 2006-06-28 |
| TW200506958A (en) | 2005-02-16 |
| JP2006521659A (ja) | 2006-09-21 |
| US20040190334A1 (en) | 2004-09-30 |
| US6954392B2 (en) | 2005-10-11 |
| TWI247316B (en) | 2006-01-11 |
| WO2004095463A1 (en) | 2004-11-04 |
| KR20050119161A (ko) | 2005-12-20 |
| KR101031028B1 (ko) | 2011-04-25 |
| US20050018477A1 (en) | 2005-01-27 |
| US6885580B2 (en) | 2005-04-26 |
| DE602004029576D1 (de) | 2010-11-25 |
| EP1642298A1 (de) | 2006-04-05 |
| EP1642298B1 (de) | 2010-10-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |