ATE486098T1 - Siloxanharzbeschichtung - Google Patents
SiloxanharzbeschichtungInfo
- Publication number
- ATE486098T1 ATE486098T1 AT05798899T AT05798899T ATE486098T1 AT E486098 T1 ATE486098 T1 AT E486098T1 AT 05798899 T AT05798899 T AT 05798899T AT 05798899 T AT05798899 T AT 05798899T AT E486098 T1 ATE486098 T1 AT E486098T1
- Authority
- AT
- Austria
- Prior art keywords
- siloxane resin
- value
- resin coating
- siloxane
- hsio3
- Prior art date
Links
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title abstract 3
- 239000011347 resin Substances 0.000 title abstract 3
- 229920005989 resin Polymers 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 229910004726 HSiO3/2 Inorganic materials 0.000 abstract 1
- 229910020485 SiO4/2 Inorganic materials 0.000 abstract 1
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Traffic Control Systems (AREA)
- Catching Or Destruction (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63700104P | 2004-12-17 | 2004-12-17 | |
| PCT/US2005/034236 WO2006065310A2 (en) | 2004-12-17 | 2005-09-23 | Siloxane resin coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE486098T1 true ATE486098T1 (de) | 2010-11-15 |
Family
ID=36588304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05798899T ATE486098T1 (de) | 2004-12-17 | 2005-09-23 | Siloxanharzbeschichtung |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7838615B2 (de) |
| EP (1) | EP1846479B1 (de) |
| JP (1) | JP5412037B2 (de) |
| KR (1) | KR101191098B1 (de) |
| CN (1) | CN101072813B (de) |
| AT (1) | ATE486098T1 (de) |
| DE (1) | DE602005024447D1 (de) |
| TW (1) | TWI384016B (de) |
| WO (1) | WO2006065310A2 (de) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7756384B2 (en) | 2004-11-08 | 2010-07-13 | Dow Corning Corporation | Method for forming anti-reflective coating |
| CN101073038B (zh) | 2004-12-17 | 2010-05-05 | 陶氏康宁公司 | 形成抗反射涂层的方法 |
| DE602005008100D1 (de) | 2004-12-17 | 2008-08-21 | Dow Corning | Verfahren zur ausbildung einer antireflexionsbeschichtung |
| EP1846479B1 (de) * | 2004-12-17 | 2010-10-27 | Dow Corning Corporation | Siloxanharzbeschichtung |
| JP4692415B2 (ja) | 2005-09-15 | 2011-06-01 | カシオ計算機株式会社 | エレクトロルミネッセンス素子の製造方法 |
| CN101371196B (zh) | 2006-02-13 | 2012-07-04 | 陶氏康宁公司 | 抗反射涂料 |
| US7704670B2 (en) | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
| US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
| CN101622296B (zh) | 2007-02-27 | 2013-10-16 | Az电子材料美国公司 | 硅基抗反射涂料组合物 |
| US8653217B2 (en) | 2007-05-01 | 2014-02-18 | Dow Corning Corporation | Method for forming anti-reflective coating |
| EP2071400A1 (de) * | 2007-11-12 | 2009-06-17 | Rohm and Haas Electronic Materials LLC | Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack |
| CN101910253B (zh) | 2008-01-15 | 2013-04-10 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
| US9808345B2 (en) | 2008-07-24 | 2017-11-07 | Iorthopedics, Inc. | Resilient arthroplasty device |
| EP2376584B1 (de) * | 2008-12-10 | 2014-07-16 | Dow Corning Corporation | Nassätzbare antireflexbeschichtungen |
| EP2373722A4 (de) | 2008-12-10 | 2013-01-23 | Dow Corning | Silsesquioxanharze |
| KR20110035924A (ko) * | 2009-09-29 | 2011-04-06 | 제이에스알 가부시끼가이샤 | 광반도체 소자의 제조 방법 및 광반도체 소자 보호층 형성용 조성물 |
| JP2011097024A (ja) * | 2009-09-29 | 2011-05-12 | Jsr Corp | 光半導体素子の製造方法、及び、光半導体素子保護層形成用組成物 |
| JP5062352B2 (ja) | 2010-09-09 | 2012-10-31 | Jsr株式会社 | レジストパターン形成方法 |
| TW201300459A (zh) * | 2011-03-10 | 2013-01-01 | Dow Corning | 用於抗反射塗層的聚矽烷矽氧烷(polysilanesiloxane)樹脂 |
| JP2015511325A (ja) * | 2012-01-18 | 2015-04-16 | ダウ コーニング コーポレーションDow Corning Corporation | シリコンリッチ反射防止コーティグ材料及びそれらの作製方法 |
| US9348228B2 (en) | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
| WO2016052413A1 (ja) * | 2014-09-30 | 2016-04-07 | 株式会社カネカ | シロキサン樹脂の製造方法 |
| SG11201703196WA (en) * | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing films |
| US10886477B2 (en) * | 2018-03-23 | 2021-01-05 | Feng-wen Yen | Iridium complex and organic electroluminescence device using the same |
| CN116496500B (zh) * | 2022-01-18 | 2026-02-24 | 上海艾深斯科技有限公司 | 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC |
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| CA2015806A1 (en) * | 1989-05-02 | 1990-11-02 | Thomas C. Williams | Ambient temperature curable polyorganosiloxanes |
| US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
| DE69300616T2 (de) * | 1992-04-30 | 1996-05-30 | Ibm | Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. |
| EP0686680A4 (de) * | 1993-12-27 | 1996-07-24 | Kawasaki Steel Co | Isolationsfilm für halbleiteranordnung, beschichtungsflüssigkeit für solchen film und verfahren zur herstellung desselben |
| JP3324360B2 (ja) * | 1995-09-25 | 2002-09-17 | 信越化学工業株式会社 | ポリシロキサン化合物及びポジ型レジスト材料 |
| JPH10158407A (ja) * | 1996-11-28 | 1998-06-16 | Toray Dow Corning Silicone Co Ltd | オルガノポリシロキサンおよびその製造方法 |
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| WO2000077575A1 (en) | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
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| US6359096B1 (en) * | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
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| KR100384810B1 (ko) * | 2000-02-16 | 2003-05-22 | 금호석유화학 주식회사 | 저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물 |
| JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
| JP4117437B2 (ja) * | 2000-05-29 | 2008-07-16 | Jsr株式会社 | 膜形成用組成物、絶縁膜形成用材料およびシリカ系膜 |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
| US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| JP4141625B2 (ja) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそのレジスト層を設けた基材 |
| EP1197998A3 (de) * | 2000-10-10 | 2005-12-21 | Shipley Company LLC | Antireflektiver Schaumstoff |
| TW538319B (en) | 2000-10-10 | 2003-06-21 | Shipley Co Llc | Antireflective composition, method for forming antireflective coating layer, and method for manufacturing electronic device |
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| US6589711B1 (en) * | 2001-04-04 | 2003-07-08 | Advanced Micro Devices, Inc. | Dual inlaid process using a bilayer resist |
| US6596404B1 (en) * | 2001-07-26 | 2003-07-22 | Dow Corning Corporation | Siloxane resins |
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| US6746530B2 (en) * | 2001-08-02 | 2004-06-08 | Chunghwa Pictures Tubes, Ltd. | High contrast, moisture resistant antistatic/antireflective coating for CRT display screen |
| US6596834B2 (en) * | 2001-09-12 | 2003-07-22 | Dow Corning Corporation | Silicone resins and porous materials produced therefrom |
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| AU2002359387A1 (en) | 2001-11-15 | 2003-06-10 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
| AU2002227106A1 (en) | 2001-11-15 | 2003-06-10 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
| WO2003044077A1 (en) | 2001-11-16 | 2003-05-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| JP4373082B2 (ja) * | 2001-12-28 | 2009-11-25 | 富士通株式会社 | アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法 |
| US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
| US20040042020A1 (en) * | 2002-08-29 | 2004-03-04 | Vondran Gary L. | Color space conversion |
| AU2003295517A1 (en) | 2002-11-12 | 2004-06-03 | Honeywell International Inc | Anti-reflective coatings for photolithography and methods of preparation thereof |
| WO2004051376A1 (ja) | 2002-12-02 | 2004-06-17 | Tokyo Ohka Kogyo Co., Ltd. | 反射防止膜形成用組成物 |
| JP2004277463A (ja) * | 2003-03-12 | 2004-10-07 | Fujitsu Ltd | 低誘電率膜用組成物 |
| TW200505966A (en) * | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
| JP4796498B2 (ja) | 2003-05-23 | 2011-10-19 | ダウ コーニング コーポレーション | 高い湿式エッチング速度を持つシロキサン樹脂系反射防止被覆組成物 |
| EP1846479B1 (de) * | 2004-12-17 | 2010-10-27 | Dow Corning Corporation | Siloxanharzbeschichtung |
| CN101073039B (zh) | 2004-12-17 | 2011-12-14 | 陶氏康宁公司 | 形成抗反射涂层的方法 |
| CN101073038B (zh) | 2004-12-17 | 2010-05-05 | 陶氏康宁公司 | 形成抗反射涂层的方法 |
-
2005
- 2005-09-23 EP EP05798899A patent/EP1846479B1/de not_active Expired - Lifetime
- 2005-09-23 AT AT05798899T patent/ATE486098T1/de not_active IP Right Cessation
- 2005-09-23 DE DE602005024447T patent/DE602005024447D1/de not_active Expired - Lifetime
- 2005-09-23 JP JP2007546638A patent/JP5412037B2/ja not_active Expired - Fee Related
- 2005-09-23 US US11/666,821 patent/US7838615B2/en not_active Expired - Fee Related
- 2005-09-23 CN CN2005800420191A patent/CN101072813B/zh not_active Expired - Fee Related
- 2005-09-23 WO PCT/US2005/034236 patent/WO2006065310A2/en not_active Ceased
- 2005-09-23 KR KR1020077013410A patent/KR101191098B1/ko not_active Expired - Fee Related
- 2005-10-14 TW TW094136066A patent/TWI384016B/zh not_active IP Right Cessation
-
2010
- 2010-10-13 US US12/903,481 patent/US8129491B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101191098B1 (ko) | 2012-10-15 |
| US8129491B2 (en) | 2012-03-06 |
| WO2006065310A2 (en) | 2006-06-22 |
| CN101072813A (zh) | 2007-11-14 |
| JP2008524374A (ja) | 2008-07-10 |
| KR20070089160A (ko) | 2007-08-30 |
| US20070261600A1 (en) | 2007-11-15 |
| DE602005024447D1 (de) | 2010-12-09 |
| EP1846479B1 (de) | 2010-10-27 |
| WO2006065310A3 (en) | 2007-01-04 |
| US20110034629A1 (en) | 2011-02-10 |
| EP1846479A2 (de) | 2007-10-24 |
| JP5412037B2 (ja) | 2014-02-12 |
| TWI384016B (zh) | 2013-02-01 |
| TW200626638A (en) | 2006-08-01 |
| US7838615B2 (en) | 2010-11-23 |
| CN101072813B (zh) | 2011-06-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |