ATE486098T1 - Siloxanharzbeschichtung - Google Patents
SiloxanharzbeschichtungInfo
- Publication number
- ATE486098T1 ATE486098T1 AT05798899T AT05798899T ATE486098T1 AT E486098 T1 ATE486098 T1 AT E486098T1 AT 05798899 T AT05798899 T AT 05798899T AT 05798899 T AT05798899 T AT 05798899T AT E486098 T1 ATE486098 T1 AT E486098T1
- Authority
- AT
- Austria
- Prior art keywords
- siloxane resin
- value
- resin coating
- siloxane
- hsio3
- Prior art date
Links
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title abstract 3
- 239000011347 resin Substances 0.000 title abstract 3
- 229920005989 resin Polymers 0.000 title abstract 3
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
- 229910004726 HSiO3/2 Inorganic materials 0.000 abstract 1
- 229910020485 SiO4/2 Inorganic materials 0.000 abstract 1
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
- Traffic Control Systems (AREA)
- Catching Or Destruction (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63700104P | 2004-12-17 | 2004-12-17 | |
| PCT/US2005/034236 WO2006065310A2 (en) | 2004-12-17 | 2005-09-23 | Siloxane resin coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE486098T1 true ATE486098T1 (de) | 2010-11-15 |
Family
ID=36588304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05798899T ATE486098T1 (de) | 2004-12-17 | 2005-09-23 | Siloxanharzbeschichtung |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7838615B2 (de) |
| EP (1) | EP1846479B1 (de) |
| JP (1) | JP5412037B2 (de) |
| KR (1) | KR101191098B1 (de) |
| CN (1) | CN101072813B (de) |
| AT (1) | ATE486098T1 (de) |
| DE (1) | DE602005024447D1 (de) |
| TW (1) | TWI384016B (de) |
| WO (1) | WO2006065310A2 (de) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7756384B2 (en) | 2004-11-08 | 2010-07-13 | Dow Corning Corporation | Method for forming anti-reflective coating |
| WO2006065310A2 (en) * | 2004-12-17 | 2006-06-22 | Dow Corning Corporation | Siloxane resin coating |
| EP1825330B1 (de) | 2004-12-17 | 2019-04-24 | Dow Silicones Corporation | Verfahren zur bildung einer antireflexbeschichtung |
| KR101275649B1 (ko) | 2004-12-17 | 2013-06-14 | 다우 코닝 코포레이션 | 반사방지 피막의 형성방법 |
| JP4692415B2 (ja) | 2005-09-15 | 2011-06-01 | カシオ計算機株式会社 | エレクトロルミネッセンス素子の製造方法 |
| WO2007094848A2 (en) | 2006-02-13 | 2007-08-23 | Dow Corning Corporation | Antireflective coating material |
| US7704670B2 (en) | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
| US8026040B2 (en) | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
| JP2010519398A (ja) | 2007-02-27 | 2010-06-03 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | ケイ素に基づく反射防止膜用組成物 |
| US8653217B2 (en) | 2007-05-01 | 2014-02-18 | Dow Corning Corporation | Method for forming anti-reflective coating |
| JP2009199061A (ja) * | 2007-11-12 | 2009-09-03 | Rohm & Haas Electronic Materials Llc | オーバーコートされたフォトレジストと共に用いるためのコーティング組成物 |
| KR20100114075A (ko) | 2008-01-15 | 2010-10-22 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
| US9808345B2 (en) | 2008-07-24 | 2017-11-07 | Iorthopedics, Inc. | Resilient arthroplasty device |
| CN102245723B (zh) * | 2008-12-10 | 2014-12-17 | 陶氏康宁公司 | 可湿蚀刻的抗反射涂层 |
| CN102245674B (zh) | 2008-12-10 | 2014-12-10 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
| JP2011097024A (ja) * | 2009-09-29 | 2011-05-12 | Jsr Corp | 光半導体素子の製造方法、及び、光半導体素子保護層形成用組成物 |
| KR20110035924A (ko) * | 2009-09-29 | 2011-04-06 | 제이에스알 가부시끼가이샤 | 광반도체 소자의 제조 방법 및 광반도체 소자 보호층 형성용 조성물 |
| JP5062352B2 (ja) | 2010-09-09 | 2012-10-31 | Jsr株式会社 | レジストパターン形成方法 |
| TW201300459A (zh) * | 2011-03-10 | 2013-01-01 | Dow Corning | 用於抗反射塗層的聚矽烷矽氧烷(polysilanesiloxane)樹脂 |
| KR20140122247A (ko) * | 2012-01-18 | 2014-10-17 | 다우 코닝 코포레이션 | 규소-풍부 반사방지 코팅 재료 및 이의 제조 방법 |
| US9348228B2 (en) | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
| EP3208295B1 (de) * | 2014-09-30 | 2021-01-13 | Kaneka Corporation | Verfahren zur herstellung von siloxanharz |
| CN107429391B (zh) * | 2014-10-24 | 2021-06-25 | 弗萨姆材料美国有限责任公司 | 组合物和使用所述组合物沉积含硅膜的方法 |
| US10886477B2 (en) * | 2018-03-23 | 2021-01-05 | Feng-wen Yen | Iridium complex and organic electroluminescence device using the same |
| CN116496500B (zh) * | 2022-01-18 | 2026-02-24 | 上海艾深斯科技有限公司 | 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC |
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| US5100503A (en) | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
| DE69300616T2 (de) | 1992-04-30 | 1996-05-30 | Ibm | Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. |
| EP0686680A4 (de) * | 1993-12-27 | 1996-07-24 | Kawasaki Steel Co | Isolationsfilm für halbleiteranordnung, beschichtungsflüssigkeit für solchen film und verfahren zur herstellung desselben |
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| JP2003502449A (ja) * | 1999-06-10 | 2003-01-21 | ハネウエル・インターナシヨナル・インコーポレーテツド | フォトリソグラフィ用スピンオンガラス反射防止コーティング |
| US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| WO2003044078A1 (en) | 2001-11-15 | 2003-05-30 | Honeywell International Inc. | Anti-reflective coatings for photolithography and methods of preparation thereof |
| KR100683428B1 (ko) * | 1999-10-25 | 2007-02-20 | 다우 코닝 코포레이션 | 용액 용해도와 안정성이 우수한 실리콘 수지 조성물 |
| US6359096B1 (en) * | 1999-10-25 | 2002-03-19 | Dow Corning Corporation | Silicone resin compositions having good solution solubility and stability |
| KR100384810B1 (ko) * | 2000-02-16 | 2003-05-22 | 금호석유화학 주식회사 | 저분자 화합물 첨가제를 포함하는 화학증폭형 레지스트조성물 |
| JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
| JP4117437B2 (ja) * | 2000-05-29 | 2008-07-16 | Jsr株式会社 | 膜形成用組成物、絶縁膜形成用材料およびシリカ系膜 |
| US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
| US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| JP4141625B2 (ja) * | 2000-08-09 | 2008-08-27 | 東京応化工業株式会社 | ポジ型レジスト組成物およびそのレジスト層を設けた基材 |
| TW588072B (en) | 2000-10-10 | 2004-05-21 | Shipley Co Llc | Antireflective porogens |
| TW538319B (en) | 2000-10-10 | 2003-06-21 | Shipley Co Llc | Antireflective composition, method for forming antireflective coating layer, and method for manufacturing electronic device |
| JP3865048B2 (ja) * | 2000-11-01 | 2007-01-10 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| GB0108274D0 (en) * | 2001-04-03 | 2001-05-23 | Dow Corning | preparation of silicone resins |
| US6589711B1 (en) | 2001-04-04 | 2003-07-08 | Advanced Micro Devices, Inc. | Dual inlaid process using a bilayer resist |
| US6596404B1 (en) * | 2001-07-26 | 2003-07-22 | Dow Corning Corporation | Siloxane resins |
| WO2003011945A2 (en) * | 2001-07-26 | 2003-02-13 | Dow Corning Corporation | Siloxane resins |
| US6746530B2 (en) | 2001-08-02 | 2004-06-08 | Chunghwa Pictures Tubes, Ltd. | High contrast, moisture resistant antistatic/antireflective coating for CRT display screen |
| US6596834B2 (en) * | 2001-09-12 | 2003-07-22 | Dow Corning Corporation | Silicone resins and porous materials produced therefrom |
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| KR20040066124A (ko) | 2001-11-15 | 2004-07-23 | 허니웰 인터내셔널 인코포레이티드 | 포토리소그라피용 스핀온 반사 방지 피막 |
| JP2005509710A (ja) | 2001-11-16 | 2005-04-14 | ハネウェル・インターナショナル・インコーポレーテッド | フォトリソグラフィ用のスピンオングラス反射防止性コーティング |
| JP4373082B2 (ja) * | 2001-12-28 | 2009-11-25 | 富士通株式会社 | アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法 |
| US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
| DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
| US20040042020A1 (en) * | 2002-08-29 | 2004-03-04 | Vondran Gary L. | Color space conversion |
| WO2004044025A2 (en) | 2002-11-12 | 2004-05-27 | Honeywell International Inc | Anti-reflective coatings for photolithography and methods of preparation thereof |
| WO2004051376A1 (ja) | 2002-12-02 | 2004-06-17 | Tokyo Ohka Kogyo Co., Ltd. | 反射防止膜形成用組成物 |
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| TW200505966A (en) * | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
| CN100355813C (zh) | 2003-05-23 | 2007-12-19 | 陶氏康宁公司 | 具有高的湿蚀刻速率的硅氧烷树脂型抗反射涂料组合物 |
| EP1825329B1 (de) | 2004-12-17 | 2015-04-08 | Dow Corning Corporation | Verfahren zur bildung einer antireflexbeschichtung |
| EP1825330B1 (de) | 2004-12-17 | 2019-04-24 | Dow Silicones Corporation | Verfahren zur bildung einer antireflexbeschichtung |
| WO2006065310A2 (en) * | 2004-12-17 | 2006-06-22 | Dow Corning Corporation | Siloxane resin coating |
-
2005
- 2005-09-23 WO PCT/US2005/034236 patent/WO2006065310A2/en not_active Ceased
- 2005-09-23 JP JP2007546638A patent/JP5412037B2/ja not_active Expired - Fee Related
- 2005-09-23 KR KR1020077013410A patent/KR101191098B1/ko not_active Expired - Fee Related
- 2005-09-23 US US11/666,821 patent/US7838615B2/en not_active Expired - Fee Related
- 2005-09-23 DE DE602005024447T patent/DE602005024447D1/de not_active Expired - Lifetime
- 2005-09-23 AT AT05798899T patent/ATE486098T1/de not_active IP Right Cessation
- 2005-09-23 EP EP05798899A patent/EP1846479B1/de not_active Expired - Lifetime
- 2005-09-23 CN CN2005800420191A patent/CN101072813B/zh not_active Expired - Fee Related
- 2005-10-14 TW TW094136066A patent/TWI384016B/zh not_active IP Right Cessation
-
2010
- 2010-10-13 US US12/903,481 patent/US8129491B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20070261600A1 (en) | 2007-11-15 |
| JP2008524374A (ja) | 2008-07-10 |
| US8129491B2 (en) | 2012-03-06 |
| KR101191098B1 (ko) | 2012-10-15 |
| CN101072813A (zh) | 2007-11-14 |
| CN101072813B (zh) | 2011-06-08 |
| TWI384016B (zh) | 2013-02-01 |
| DE602005024447D1 (de) | 2010-12-09 |
| US20110034629A1 (en) | 2011-02-10 |
| WO2006065310A3 (en) | 2007-01-04 |
| EP1846479B1 (de) | 2010-10-27 |
| JP5412037B2 (ja) | 2014-02-12 |
| KR20070089160A (ko) | 2007-08-30 |
| WO2006065310A2 (en) | 2006-06-22 |
| EP1846479A2 (de) | 2007-10-24 |
| TW200626638A (en) | 2006-08-01 |
| US7838615B2 (en) | 2010-11-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |