ATE486098T1 - Siloxanharzbeschichtung - Google Patents

Siloxanharzbeschichtung

Info

Publication number
ATE486098T1
ATE486098T1 AT05798899T AT05798899T ATE486098T1 AT E486098 T1 ATE486098 T1 AT E486098T1 AT 05798899 T AT05798899 T AT 05798899T AT 05798899 T AT05798899 T AT 05798899T AT E486098 T1 ATE486098 T1 AT E486098T1
Authority
AT
Austria
Prior art keywords
siloxane resin
value
resin coating
siloxane
hsio3
Prior art date
Application number
AT05798899T
Other languages
English (en)
Inventor
Bianxiao Zhong
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of ATE486098T1 publication Critical patent/ATE486098T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Traffic Control Systems (AREA)
  • Catching Or Destruction (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
AT05798899T 2004-12-17 2005-09-23 Siloxanharzbeschichtung ATE486098T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63700104P 2004-12-17 2004-12-17
PCT/US2005/034236 WO2006065310A2 (en) 2004-12-17 2005-09-23 Siloxane resin coating

Publications (1)

Publication Number Publication Date
ATE486098T1 true ATE486098T1 (de) 2010-11-15

Family

ID=36588304

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05798899T ATE486098T1 (de) 2004-12-17 2005-09-23 Siloxanharzbeschichtung

Country Status (9)

Country Link
US (2) US7838615B2 (de)
EP (1) EP1846479B1 (de)
JP (1) JP5412037B2 (de)
KR (1) KR101191098B1 (de)
CN (1) CN101072813B (de)
AT (1) ATE486098T1 (de)
DE (1) DE602005024447D1 (de)
TW (1) TWI384016B (de)
WO (1) WO2006065310A2 (de)

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ATE400672T1 (de) 2004-12-17 2008-07-15 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
WO2006065316A1 (en) 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating
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JP4692415B2 (ja) 2005-09-15 2011-06-01 カシオ計算機株式会社 エレクトロルミネッセンス素子の製造方法
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
US7704670B2 (en) 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
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US8653217B2 (en) 2007-05-01 2014-02-18 Dow Corning Corporation Method for forming anti-reflective coating
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JP2011510133A (ja) 2008-01-15 2011-03-31 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
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CN102245674B (zh) 2008-12-10 2014-12-10 陶氏康宁公司 倍半硅氧烷树脂
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JP5062352B2 (ja) 2010-09-09 2012-10-31 Ｊｓｒ株式会社 レジストパターン形成方法
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷（ｐｏｌｙｓｉｌａｎｅｓｉｌｏｘａｎｅ）樹脂
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SG11201703196WA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing films
US10886477B2 (en) * 2018-03-23 2021-01-05 Feng-wen Yen Iridium complex and organic electroluminescence device using the same
CN116496500B (zh) * 2022-01-18 2026-02-24 上海艾深斯科技有限公司 用于KrF显微光刻法的单层组合物中组合的硬掩模和ARC

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Also Published As

Publication number Publication date
EP1846479B1 (de) 2010-10-27
DE602005024447D1 (de) 2010-12-09
US7838615B2 (en) 2010-11-23
TW200626638A (en) 2006-08-01
CN101072813B (zh) 2011-06-08
KR20070089160A (ko) 2007-08-30
US8129491B2 (en) 2012-03-06
EP1846479A2 (de) 2007-10-24
JP5412037B2 (ja) 2014-02-12
TWI384016B (zh) 2013-02-01
KR101191098B1 (ko) 2012-10-15
JP2008524374A (ja) 2008-07-10
WO2006065310A2 (en) 2006-06-22
US20070261600A1 (en) 2007-11-15
WO2006065310A3 (en) 2007-01-04
CN101072813A (zh) 2007-11-14
US20110034629A1 (en) 2011-02-10

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