ATE488569T1 - Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat - Google Patents
Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstratInfo
- Publication number
- ATE488569T1 ATE488569T1 AT04746420T AT04746420T ATE488569T1 AT E488569 T1 ATE488569 T1 AT E488569T1 AT 04746420 T AT04746420 T AT 04746420T AT 04746420 T AT04746420 T AT 04746420T AT E488569 T1 ATE488569 T1 AT E488569T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor substrate
- cleaning
- conductive paths
- forming conductive
- cleaning agent
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
- H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47914603P | 2003-06-18 | 2003-06-18 | |
| PCT/JP2004/008951 WO2004113486A1 (en) | 2003-06-18 | 2004-06-18 | Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE488569T1 true ATE488569T1 (de) | 2010-12-15 |
Family
ID=33539152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04746420T ATE488569T1 (de) | 2003-06-18 | 2004-06-18 | Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7442675B2 (de) |
| EP (1) | EP1641908B1 (de) |
| JP (1) | JP4609898B2 (de) |
| KR (1) | KR100748903B1 (de) |
| CN (1) | CN1849386B (de) |
| AT (1) | ATE488569T1 (de) |
| DE (1) | DE602004030121D1 (de) |
| TW (1) | TWI275642B (de) |
| WO (1) | WO2004113486A1 (de) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US20070099810A1 (en) * | 2005-10-27 | 2007-05-03 | Hiroshi Matsunaga | Cleaning liquid and cleaning method |
| JP5012800B2 (ja) * | 2006-07-05 | 2012-08-29 | 日立化成工業株式会社 | Cmp用研磨液及び研磨方法 |
| US20080070820A1 (en) * | 2006-09-19 | 2008-03-20 | Wescor, Inc. | Stain removing cleaning solutions |
| SG175559A1 (en) * | 2006-09-25 | 2011-11-28 | Advanced Tech Materials | Compositions and methods for the removal of photoresist for a wafer rework application |
| CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性较厚光刻胶清洗液 |
| US20100081595A1 (en) * | 2007-01-22 | 2010-04-01 | Freescale Semiconductor, Inc | Liquid cleaning composition and method for cleaning semiconductor devices |
| KR101488265B1 (ko) * | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | 박리 조성물 및 박리 방법 |
| JP2009197175A (ja) * | 2008-02-25 | 2009-09-03 | The Inctec Inc | 洗浄剤原液 |
| US20110048048A1 (en) * | 2009-03-25 | 2011-03-03 | Thomas Gielda | Personal Cooling System |
| SG170691A1 (en) * | 2009-10-14 | 2011-05-30 | Rohm & Haas Elect Mat | Method of cleaning and micro-etching semiconductor wafers |
| JP5498768B2 (ja) * | 2009-12-02 | 2014-05-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
| JP5404459B2 (ja) * | 2010-02-08 | 2014-01-29 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
| CN102147576B (zh) * | 2010-02-09 | 2013-02-20 | 京东方科技集团股份有限公司 | 光刻胶剥离液组合物 |
| US8128755B2 (en) | 2010-03-03 | 2012-03-06 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cleaning solvent and cleaning method for metallic compound |
| JP6215511B2 (ja) * | 2010-07-16 | 2017-10-18 | 栗田工業株式会社 | ボイラ用防食剤 |
| FR2965567B1 (fr) | 2010-10-05 | 2013-12-27 | Arkema France | Composition de nettoyage de polymeres |
| CN102965214A (zh) * | 2011-08-31 | 2013-03-13 | 东友Fine-Chem股份有限公司 | 清洗组合物 |
| CN102634809B (zh) * | 2012-04-27 | 2013-11-13 | 东莞市广华化工有限公司 | 一种二次干膜去膜液 |
| JP6151484B2 (ja) * | 2012-06-11 | 2017-06-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
| JP5626498B2 (ja) * | 2012-06-13 | 2014-11-19 | 三菱瓦斯化学株式会社 | 洗浄用液体組成物、半導体素子の洗浄方法、および半導体素子の製造方法 |
| KR101420571B1 (ko) * | 2013-07-05 | 2014-07-16 | 주식회사 동진쎄미켐 | 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 |
| US20150064911A1 (en) | 2013-08-27 | 2015-03-05 | Tokyo Electron Limited | Substrate processing method, substrate processing apparatus and storage medium |
| TWI584370B (zh) * | 2013-08-27 | 2017-05-21 | 東京威力科創股份有限公司 | A substrate processing method, a substrate processing apparatus, and a memory medium |
| JP6022490B2 (ja) * | 2013-08-27 | 2016-11-09 | 東京エレクトロン株式会社 | 基板処理方法、基板処理システムおよび記憶媒体 |
| US10072237B2 (en) * | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
| US10400167B2 (en) * | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
| TWI783640B (zh) * | 2016-03-01 | 2022-11-11 | 日商東京應化工業股份有限公司 | 半導體基板或裝置之洗淨液 |
| JP6561901B2 (ja) * | 2016-04-15 | 2019-08-21 | 信越化学工業株式会社 | 金属表面処理剤 |
| JP6674628B2 (ja) * | 2016-04-26 | 2020-04-01 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
| CN109686664A (zh) * | 2017-10-18 | 2019-04-26 | 无锡华瑛微电子技术有限公司 | 一种含有四烷基氢氧化铵的光刻胶去除液及光刻胶的去除方法 |
| US10761423B2 (en) | 2017-08-30 | 2020-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical composition for tri-layer removal |
| EP3502225B1 (de) * | 2017-12-22 | 2021-09-01 | Versum Materials US, LLC | Photolackentferner |
| US11353794B2 (en) | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
| TWI692679B (zh) * | 2017-12-22 | 2020-05-01 | 美商慧盛材料美國責任有限公司 | 光阻剝除劑 |
| JP7817815B2 (ja) * | 2020-11-30 | 2026-02-19 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
| WO2022191051A1 (ja) | 2021-03-08 | 2022-09-15 | 三菱瓦斯化学株式会社 | 半導体基板洗浄用組成物及び洗浄方法 |
| CN116218610B (zh) * | 2021-12-06 | 2024-07-09 | 上海新阳半导体材料股份有限公司 | 一种聚酰亚胺清洗液的制备方法 |
| CN115097703A (zh) * | 2022-06-27 | 2022-09-23 | 北京华卓精科科技股份有限公司 | 光刻胶清洗液及其制备方法和清洗方法 |
| JP7777163B2 (ja) * | 2024-02-29 | 2025-11-27 | 花王株式会社 | 樹脂マスクの剥離方法 |
| WO2025254054A1 (ja) * | 2024-06-03 | 2025-12-11 | 花王株式会社 | 剥離剤組成物 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3980587A (en) * | 1974-08-16 | 1976-09-14 | G. T. Schjeldahl Company | Stripper composition |
| DE3530282A1 (de) * | 1985-08-24 | 1987-03-05 | Hoechst Ag | Verfahren zum entschichten von lichtgehaerteten photoresistschichten |
| DE3638629A1 (de) * | 1986-11-11 | 1988-05-26 | Schering Ag | Mittel und verfahren zur entfernung von fotoresisten |
| US4964919A (en) * | 1988-12-27 | 1990-10-23 | Nalco Chemical Company | Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound |
| CN1051756A (zh) * | 1989-11-11 | 1991-05-29 | 孙启基 | 一种水基电子清洗制剂 |
| JP2836263B2 (ja) | 1991-01-24 | 1998-12-14 | 三菱化学株式会社 | 集積回路封止素子用洗浄液 |
| US5139607A (en) * | 1991-04-23 | 1992-08-18 | Act, Inc. | Alkaline stripping compositions |
| JP3264405B2 (ja) | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
| JP2950407B2 (ja) * | 1996-01-29 | 1999-09-20 | 東京応化工業株式会社 | 電子部品製造用基材の製造方法 |
| TW442864B (en) * | 1997-01-27 | 2001-06-23 | Mitsubishi Chem Corp | Surface treatment composition and method for treating surface of substrate by using the same |
| JPH10289891A (ja) | 1997-04-11 | 1998-10-27 | Mitsubishi Gas Chem Co Inc | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
| US6060439A (en) * | 1997-09-29 | 2000-05-09 | Kyzen Corporation | Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture |
| US5962197A (en) * | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
| US20010039251A1 (en) * | 1998-06-12 | 2001-11-08 | Krishna G. Sachdev | Removal of screening paste residue with quaternary ammonium hydroxide-based aqueous cleaning compositions |
| KR20000053521A (ko) * | 1999-01-20 | 2000-08-25 | 고사이 아끼오 | 금속 부식 방지제 및 세척액 |
| KR100360397B1 (ko) * | 1999-11-26 | 2002-11-18 | 삼성전자 주식회사 | 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법 |
| TWI243204B (en) * | 2000-02-04 | 2005-11-11 | Sumitomo Chemical Co | Electronic parts cleaning solution |
| JP2001244228A (ja) | 2000-02-29 | 2001-09-07 | Mitsubishi Materials Silicon Corp | 半導体基板の洗浄液及び洗浄方法 |
| AU2001267861A1 (en) * | 2000-06-30 | 2002-01-14 | Tokyo Electron Limited | Fabrication process of a semiconductor device |
| JP2002062668A (ja) * | 2000-08-14 | 2002-02-28 | Mitsubishi Gas Chem Co Inc | フォトレジストの剥離方法 |
| JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
| JP2002357908A (ja) | 2001-05-31 | 2002-12-13 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液 |
| JP4945857B2 (ja) * | 2001-06-13 | 2012-06-06 | Jsr株式会社 | 研磨パッド洗浄用組成物及び研磨パッド洗浄方法 |
| MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| JP3799026B2 (ja) * | 2002-03-29 | 2006-07-19 | 三洋化成工業株式会社 | アルカリ洗浄剤 |
-
2004
- 2004-06-10 US US10/864,394 patent/US7442675B2/en not_active Expired - Lifetime
- 2004-06-18 DE DE602004030121T patent/DE602004030121D1/de not_active Expired - Lifetime
- 2004-06-18 AT AT04746420T patent/ATE488569T1/de not_active IP Right Cessation
- 2004-06-18 TW TW093117540A patent/TWI275642B/zh not_active IP Right Cessation
- 2004-06-18 JP JP2006516850A patent/JP4609898B2/ja not_active Expired - Lifetime
- 2004-06-18 CN CN200480017132XA patent/CN1849386B/zh not_active Expired - Lifetime
- 2004-06-18 EP EP04746420A patent/EP1641908B1/de not_active Expired - Lifetime
- 2004-06-18 KR KR1020057024256A patent/KR100748903B1/ko not_active Expired - Lifetime
- 2004-06-18 WO PCT/JP2004/008951 patent/WO2004113486A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1849386A (zh) | 2006-10-18 |
| JP4609898B2 (ja) | 2011-01-12 |
| KR20060086844A (ko) | 2006-08-01 |
| CN1849386B (zh) | 2010-07-28 |
| KR100748903B1 (ko) | 2007-08-13 |
| US7442675B2 (en) | 2008-10-28 |
| US20040259761A1 (en) | 2004-12-23 |
| JP2006527783A (ja) | 2006-12-07 |
| EP1641908B1 (de) | 2010-11-17 |
| WO2004113486A1 (en) | 2004-12-29 |
| EP1641908A1 (de) | 2006-04-05 |
| TWI275642B (en) | 2007-03-11 |
| DE602004030121D1 (de) | 2010-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE488569T1 (de) | Reinigungsmittel, verfahren zur reinigung von halbleitersubstrat sowie verfahren zur ausbildung der leitungsbahnen auf halbleitersubstrat | |
| SG147486A1 (en) | Cleaning agent for substrate and cleaning method | |
| TW200509237A (en) | Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof | |
| DE60028962D1 (de) | Zusammensetzungen zur reinigung und entfernung von organischen sowie plasmaätzrückständen auf halbleitervorrichtungen | |
| DE602004009595D1 (de) | Ablös- und reinigungszusammensetzungen für die mikroelektronik | |
| WO2005057281A3 (en) | Resist, barc and gap fill material stripping chemical and method | |
| ATE495546T1 (de) | Zusammensetzung zum abziehen und reinigen und deren verwendung | |
| ATE505517T1 (de) | Verfahren zum schutz von substraten und zur entfernung von verunreinigungen aus solchen substraten | |
| TW200728454A (en) | Formulations for removing copper-containing post-etch residue from microelectronic devices | |
| EP1212150A4 (de) | Lactam-zusammensetzungen zum entfernen von organischen und plasma-geätzten rückständen auf halbleitern | |
| EP1178359A3 (de) | Entschichtungszusammensetzung | |
| DE602005018075D1 (de) | Reinigungsmittel für mikroelektronik-substrate | |
| EP1128222A3 (de) | Zusammensetzung zur Entschichtung von Photoresist | |
| AR021462A1 (es) | Composiciones acuosas alcalinas de limpieza y tratamiento de superficies duras. | |
| DE60323143D1 (de) | Aufüberkritischem kohlenstoffdioxid beruhende formulierung für die entfernung von gegebenenfalls veraschten aluminiumresten nach dem ätzen | |
| WO2007027522A3 (en) | Composition and method for removing thick film photoresist | |
| TW200707131A (en) | Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition | |
| SG152961A1 (en) | Flouride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction | |
| TW200801857A (en) | Photoresist stripping liquid and method for processing substrate using the liquid | |
| TW200732864A (en) | Composition for removing residue of a wiring substrate, and washing method thereof | |
| TW200519197A (en) | Tungsten metal removing solution and method for removing tungsten metal by use thereof | |
| JP2015230333A (ja) | レジスト剥離剤及びそれを用いたレジスト剥離方法 | |
| MY144723A (en) | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist | |
| WO2006052692A3 (en) | Post etch cleaning composition for use with substrates having aluminum | |
| WO2003064581A8 (en) | Methods and compositions for chemically treating a substrate using foam technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |