ATE488842T1 - Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand - Google Patents

Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand

Info

Publication number
ATE488842T1
ATE488842T1 AT05790410T AT05790410T ATE488842T1 AT E488842 T1 ATE488842 T1 AT E488842T1 AT 05790410 T AT05790410 T AT 05790410T AT 05790410 T AT05790410 T AT 05790410T AT E488842 T1 ATE488842 T1 AT E488842T1
Authority
AT
Austria
Prior art keywords
bus
memory cells
encoder
programmable resistor
check bits
Prior art date
Application number
AT05790410T
Other languages
English (en)
Inventor
Martijn Lankhorst
Franciscus Widdershoven
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE488842T1 publication Critical patent/ATE488842T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT05790410T 2004-09-30 2005-08-19 Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand ATE488842T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04104797 2004-09-30
PCT/IB2005/052730 WO2006035326A1 (en) 2004-09-30 2005-08-19 Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor

Publications (1)

Publication Number Publication Date
ATE488842T1 true ATE488842T1 (de) 2010-12-15

Family

ID=35457343

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05790410T ATE488842T1 (de) 2004-09-30 2005-08-19 Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand

Country Status (7)

Country Link
US (1) US8335103B2 (de)
EP (1) EP1797566B1 (de)
JP (1) JP2008515127A (de)
CN (1) CN100568390C (de)
AT (1) ATE488842T1 (de)
DE (1) DE602005024840D1 (de)
WO (1) WO2006035326A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679980B2 (en) * 2006-11-21 2010-03-16 Qimonda North America Corp. Resistive memory including selective refresh operation
US20100182044A1 (en) * 2007-03-13 2010-07-22 Easic Corporation Programming and circuit topologies for programmable vias
WO2009090589A1 (en) 2008-01-16 2009-07-23 Nxp B.V. Multilayer structure comprising a phase change material layer and a method of producing the same
US8294488B1 (en) * 2009-04-24 2012-10-23 Adesto Technologies Corporation Programmable impedance element circuits and methods
KR20120098326A (ko) * 2011-02-28 2012-09-05 에스케이하이닉스 주식회사 반도체 장치 및 데이터 처리방법
CN103592883B (zh) * 2013-12-02 2016-01-20 哈尔滨工业大学 基于dsp的多路精密可编程电阻模块及其控制方法
US11646079B2 (en) 2020-08-26 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell including programmable resistors with transistor components

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
GB8627488D0 (en) 1986-11-18 1986-12-17 British Petroleum Co Plc Memory matrix
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
JP4667594B2 (ja) 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
DE60137788D1 (de) 2001-12-27 2009-04-09 St Microelectronics Srl Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
WO2003085741A1 (en) * 2002-04-10 2003-10-16 Matsushita Electric Industrial Co., Ltd. Non-volatile flip-flop
JP4282314B2 (ja) * 2002-06-25 2009-06-17 シャープ株式会社 記憶装置
AU2003249507A1 (en) 2002-08-20 2004-03-11 Koninklijke Philips Electronics N.V. Ferroelectric device and method of manufacturing such a device
EP1537584B1 (de) 2002-09-11 2017-10-25 Ovonyx Memory Technology, LLC Programmierung eines phasenwechselmaterialspeicher
JP2004185755A (ja) 2002-12-05 2004-07-02 Sharp Corp 不揮発性半導体記憶装置
JP4124635B2 (ja) 2002-12-05 2008-07-23 シャープ株式会社 半導体記憶装置及びメモリセルアレイの消去方法
DE60335208D1 (de) 2002-12-19 2011-01-13 Nxp Bv Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung
KR100479810B1 (ko) 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
JP2004288282A (ja) * 2003-03-20 2004-10-14 Fujitsu Ltd 半導体装置
JP4254293B2 (ja) * 2003-03-25 2009-04-15 株式会社日立製作所 記憶装置
JP4113493B2 (ja) 2003-06-12 2008-07-09 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
US7180767B2 (en) 2003-06-18 2007-02-20 Macronix International Co., Ltd. Multi-level memory device and methods for programming and reading the same
JP3752589B2 (ja) 2003-06-25 2006-03-08 松下電器産業株式会社 不揮発性メモリを駆動する方法
JP4356542B2 (ja) 2003-08-27 2009-11-04 日本電気株式会社 半導体装置
DE10353641B4 (de) 2003-11-17 2016-12-01 Robert Bosch Gmbh Brennstoffeinspritzventil
JP2005183619A (ja) * 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
JP4646636B2 (ja) 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
CN101069241A (zh) 2007-11-07
EP1797566B1 (de) 2010-11-17
US20100214827A1 (en) 2010-08-26
DE602005024840D1 (de) 2010-12-30
JP2008515127A (ja) 2008-05-08
EP1797566A1 (de) 2007-06-20
CN100568390C (zh) 2009-12-09
WO2006035326A1 (en) 2006-04-06
US8335103B2 (en) 2012-12-18

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