ATE490542T1 - Leitfähiges glas für photoelektrische umsetzungseinrichtung - Google Patents

Leitfähiges glas für photoelektrische umsetzungseinrichtung

Info

Publication number
ATE490542T1
ATE490542T1 AT03720892T AT03720892T ATE490542T1 AT E490542 T1 ATE490542 T1 AT E490542T1 AT 03720892 T AT03720892 T AT 03720892T AT 03720892 T AT03720892 T AT 03720892T AT E490542 T1 ATE490542 T1 AT E490542T1
Authority
AT
Austria
Prior art keywords
electrically conductive
grid
conductive film
transparent electrically
film
Prior art date
Application number
AT03720892T
Other languages
English (en)
Inventor
Kenichi Okada
Hiroshi Matsui
Nobuo Tanabe
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Application granted granted Critical
Publication of ATE490542T1 publication Critical patent/ATE490542T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005—Photoelectrochemical storage cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Non-Insulated Conductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Medicinal Preparation (AREA)
AT03720892T 2002-03-26 2003-03-25 Leitfähiges glas für photoelektrische umsetzungseinrichtung ATE490542T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002086859 2002-03-26
JP2002333598 2002-11-18
PCT/JP2003/003626 WO2003081609A1 (fr) 2002-03-26 2003-03-25 Verre conducteur et dispositif de conversion photoelectrique mettant en oeuvre ce verre

Publications (1)

Publication Number Publication Date
ATE490542T1 true ATE490542T1 (de) 2010-12-15

Family

ID=28456269

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03720892T ATE490542T1 (de) 2002-03-26 2003-03-25 Leitfähiges glas für photoelektrische umsetzungseinrichtung

Country Status (10)

Country Link
US (1) US8546683B2 (de)
EP (1) EP1489628B1 (de)
JP (1) JP4071719B2 (de)
KR (1) KR100612458B1 (de)
CN (1) CN1326158C (de)
AT (1) ATE490542T1 (de)
AU (1) AU2003236063B2 (de)
DE (1) DE60335179D1 (de)
TW (1) TWI234885B (de)
WO (1) WO2003081609A1 (de)

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JP4797324B2 (ja) * 2004-01-09 2011-10-19 株式会社ブリヂストン 色素増感型太陽電池用電極
JP4892197B2 (ja) * 2005-04-01 2012-03-07 関西パイプ工業株式会社 色素増感型太陽電池用電極基板、色素増感型太陽電池用光電極および対向電極、ならびに色素増感型太陽電池
JP2006294423A (ja) * 2005-04-11 2006-10-26 Ngk Spark Plug Co Ltd 色素増感型太陽電池
JP4966525B2 (ja) * 2005-08-10 2012-07-04 株式会社エンプラス 色素増感型太陽電池、その光電極基板およびその光電極基板の製造方法
FR2895206B1 (fr) * 2005-12-16 2008-03-21 Framatome Anp Sas Canne chauffante pour pressuriseur de circuit primaire d'un reacteur nucleaire a eau sous pression.
EP2037529B1 (de) * 2006-06-29 2013-11-06 National University Corporation Kyushu Institute Herstellungsprozess für eine farbstoffsensibilisierte solarzelle
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WO2008053464A2 (en) 2006-11-01 2008-05-08 Bar-Ilan University Nickel-cobalt alloys as current collectors and conductive interconnects and deposition thereof on transparent conductive oxides
EP2158612A4 (de) * 2007-05-15 2017-04-19 3GSolar Photovoltaics Ltd. Photovoltaische zelle
WO2008152889A1 (ja) * 2007-06-11 2008-12-18 Konica Minolta Holdings, Inc. 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器
JP5096064B2 (ja) * 2007-08-01 2012-12-12 シャープ株式会社 色素増感型太陽電池モジュール
JP5252929B2 (ja) * 2008-01-16 2013-07-31 ラピスセミコンダクタ株式会社 色素増感太陽電池及びその製造方法
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JP5273709B2 (ja) * 2008-07-02 2013-08-28 シャープ株式会社 色素増感太陽電池、その製造方法および色素増感太陽電池モジュール
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
WO2010107795A1 (en) * 2009-03-17 2010-09-23 Konarka Technologies, Inc. Metal substrate for a dye sensitized photovoltaic cell
EP2259329A1 (de) * 2009-05-26 2010-12-08 Institut de Ciències Fotòniques, Fundació Privada Transparente Metallleiter mit geringem Schichtwiderstand
US9139465B2 (en) 2009-08-04 2015-09-22 Lehigh University Conductive doped metal-glass compositions and methods
EP2309547B1 (de) * 2009-10-06 2012-12-12 Samsung SDI Co., Ltd. Photoelektrische Umwandlungsvorrichtung
EP2312641A1 (de) * 2009-10-13 2011-04-20 Ecole Polytechnique Fédérale de Lausanne (EPFL) Vorrichtung mit elektrischen Kontakten und deren Herstellungsverfahren
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CN102194898B (zh) * 2010-03-15 2013-03-27 常州天合光能有限公司 太阳能电池用导电镍浆
KR20130136431A (ko) * 2010-08-06 2013-12-12 아사히 가라스 가부시키가이샤 서포트 기판
KR101132032B1 (ko) * 2010-08-11 2012-04-02 삼성에스디아이 주식회사 광전 변환 소자용 전극, 이의 제조 방법 및 이를 포함하는 광전 변환 소자
KR20130102043A (ko) * 2010-09-01 2013-09-16 도요보 가부시키가이샤 광 확산 필름 적층체
TWI407579B (zh) 2010-09-08 2013-09-01 Ind Tech Res Inst 基板電極結構的製造方法
KR101091375B1 (ko) * 2010-09-16 2011-12-07 엘지이노텍 주식회사 태양 전지 및 이의 제조 방법
US9356172B2 (en) 2010-09-16 2016-05-31 Lg Innotek Co., Ltd. Solar cell and method for manufacturing same
CN101964398A (zh) * 2010-10-11 2011-02-02 福建钧石能源有限公司 柔性薄膜太阳能电池及其制造方法
US9401490B2 (en) * 2010-10-29 2016-07-26 Lintec Corporation Transparent conductive film, electronic device, and method for manufacturing electronic device
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CN103187119B (zh) 2013-02-06 2014-08-06 南昌欧菲光科技有限公司 导电膜及其制备方法以及包含该导电膜的触摸屏
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
KR20150031917A (ko) * 2013-09-17 2015-03-25 엘지이노텍 주식회사 전극 플레이트와 이를 이용하는 전기변색 플레이트, 전기변색 미러 및 디스플레이 장치
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JP6310312B2 (ja) * 2014-04-18 2018-04-11 キヤノン株式会社 光電変換素子およびその製造方法
JP6832658B2 (ja) * 2016-09-23 2021-02-24 スタンレー電気株式会社 光透過基板、表示装置、信号装置、および、照明装置
WO2019165234A1 (en) * 2018-02-23 2019-08-29 Ohio State Innovation Foundation Passivated conductive films, and electroactuators containing same
CN111129189B (zh) * 2019-12-11 2022-04-12 中国电子科技集团公司第十八研究所 一种空间用ito玻璃盖片及制备方法
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Also Published As

Publication number Publication date
EP1489628A4 (de) 2008-01-02
US20050034755A1 (en) 2005-02-17
EP1489628B1 (de) 2010-12-01
CN1643621A (zh) 2005-07-20
JP4071719B2 (ja) 2008-04-02
JPWO2003081609A1 (ja) 2005-07-28
TW200306014A (en) 2003-11-01
KR100612458B1 (ko) 2006-08-16
US8546683B2 (en) 2013-10-01
AU2003236063B2 (en) 2006-04-06
DE60335179D1 (de) 2011-01-13
WO2003081609A1 (fr) 2003-10-02
EP1489628A1 (de) 2004-12-22
KR20040095320A (ko) 2004-11-12
AU2003236063A1 (en) 2003-10-08
TWI234885B (en) 2005-06-21
CN1326158C (zh) 2007-07-11

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