ATE490560T1 - Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter - Google Patents

Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter

Info

Publication number
ATE490560T1
ATE490560T1 AT08765059T AT08765059T ATE490560T1 AT E490560 T1 ATE490560 T1 AT E490560T1 AT 08765059 T AT08765059 T AT 08765059T AT 08765059 T AT08765059 T AT 08765059T AT E490560 T1 ATE490560 T1 AT E490560T1
Authority
AT
Austria
Prior art keywords
insulation film
oxide semiconductor
semiconductor layer
forming
gate
Prior art date
Application number
AT08765059T
Other languages
English (en)
Inventor
Hideyuki Omura
Ryo Hayashi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE490560T1 publication Critical patent/ATE490560T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dram (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Light Receiving Elements (AREA)
AT08765059T 2007-05-31 2008-05-28 Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter ATE490560T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007145186 2007-05-31
PCT/JP2008/060246 WO2008149873A1 (en) 2007-05-31 2008-05-28 Manufacturing method of thin film transistor using oxide semiconductor

Publications (1)

Publication Number Publication Date
ATE490560T1 true ATE490560T1 (de) 2010-12-15

Family

ID=39816905

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08765059T ATE490560T1 (de) 2007-05-31 2008-05-28 Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter

Country Status (9)

Country Link
US (1) US8193045B2 (de)
EP (1) EP2153468B1 (de)
JP (1) JP5361249B2 (de)
KR (1) KR101092483B1 (de)
CN (1) CN101681928B (de)
AT (1) ATE490560T1 (de)
DE (1) DE602008003796D1 (de)
TW (1) TWI373142B (de)
WO (1) WO2008149873A1 (de)

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