ATE490597T1 - Hochspannungschnittstelle und steuerschaltung dafür - Google Patents

Hochspannungschnittstelle und steuerschaltung dafür

Info

Publication number
ATE490597T1
ATE490597T1 AT03368067T AT03368067T ATE490597T1 AT E490597 T1 ATE490597 T1 AT E490597T1 AT 03368067 T AT03368067 T AT 03368067T AT 03368067 T AT03368067 T AT 03368067T AT E490597 T1 ATE490597 T1 AT E490597T1
Authority
AT
Austria
Prior art keywords
circuit
external components
control circuit
high voltage
voltage interface
Prior art date
Application number
AT03368067T
Other languages
English (en)
Inventor
Horst Knoedgen
Original Assignee
Dialog Semiconductor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor Gmbh filed Critical Dialog Semiconductor Gmbh
Application granted granted Critical
Publication of ATE490597T1 publication Critical patent/ATE490597T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Dc-Dc Converters (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Details Of Television Scanning (AREA)
AT03368067T 2003-07-04 2003-07-04 Hochspannungschnittstelle und steuerschaltung dafür ATE490597T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03368067A EP1494354B1 (de) 2003-07-04 2003-07-04 Hochspannungschnittstelle und Steuerschaltung dafür

Publications (1)

Publication Number Publication Date
ATE490597T1 true ATE490597T1 (de) 2010-12-15

Family

ID=32865090

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03368067T ATE490597T1 (de) 2003-07-04 2003-07-04 Hochspannungschnittstelle und steuerschaltung dafür

Country Status (4)

Country Link
US (1) US6781423B1 (de)
EP (1) EP1494354B1 (de)
AT (1) ATE490597T1 (de)
DE (1) DE60335180D1 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1594164B1 (de) 2003-02-14 2012-05-09 Hitachi, Ltd. Integrierte schaltung zur ansteuerung eines halbleiterbauelements
JP4157484B2 (ja) * 2004-03-17 2008-10-01 株式会社日立製作所 半導体集積回路およびそれを用いた磁気記憶装置
DE102004049817A1 (de) * 2004-10-13 2006-04-27 Semikron Elektronik Gmbh & Co. Kg Integrierte Schaltungsanordnung zur Ansteuerung von Leistungshalbleiterschaltern
JP4682007B2 (ja) * 2004-11-10 2011-05-11 三菱電機株式会社 電力用半導体装置
WO2007003967A2 (en) * 2005-07-06 2007-01-11 Cambridge Semiconductor Limited Switch mode power supply control systems
GB2433363A (en) * 2005-12-16 2007-06-20 Cambridge Semiconductor Ltd A high side transistor drive circuit
US7710098B2 (en) * 2005-12-16 2010-05-04 Cambridge Semiconductor Limited Power supply driver circuit
US7733098B2 (en) * 2005-12-22 2010-06-08 Cambridge Semiconductor Limited Saturation detection circuits
GB0615029D0 (en) * 2005-12-22 2006-09-06 Cambridge Semiconductor Ltd Switch mode power supply controllers
JP2007288992A (ja) * 2006-03-20 2007-11-01 Hitachi Ltd 半導体回路
US7242149B1 (en) * 2006-08-09 2007-07-10 Cheng-Lung Ku Lamp driving circuit with floating power supply driver
JP4864622B2 (ja) * 2006-09-27 2012-02-01 株式会社ケーヒン 誘導性負荷の駆動装置
US8085009B2 (en) 2007-08-13 2011-12-27 The Powerwise Group, Inc. IGBT/FET-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation
US8619443B2 (en) 2010-09-29 2013-12-31 The Powerwise Group, Inc. System and method to boost voltage
WO2009029162A1 (en) * 2007-08-24 2009-03-05 The Powerwise Group, Inc., A Delaware Corporation System and method for providing constant loading in ac power applications
US8085010B2 (en) * 2007-08-24 2011-12-27 The Powerwise Group, Inc. TRIAC/SCR-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation
US8120307B2 (en) * 2007-08-24 2012-02-21 The Powerwise Group, Inc. System and method for providing constant loading in AC power applications
US8698447B2 (en) 2007-09-14 2014-04-15 The Powerwise Group, Inc. Energy saving system and method for devices with rotating or reciprocating masses
US8810190B2 (en) 2007-09-14 2014-08-19 The Powerwise Group, Inc. Motor controller system and method for maximizing energy savings
US8022746B1 (en) * 2008-02-07 2011-09-20 National Semiconductor Corporation Bootstrap circuit for H-bridge structure utilizing N-channel high-side fets
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8004255B2 (en) 2008-08-07 2011-08-23 The Powerwise Group, Inc. Power supply for IGBT/FET drivers
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7843237B2 (en) * 2008-11-17 2010-11-30 Infineon Technologies Austria Ag Circuit arrangement for actuating a transistor
US8300441B2 (en) * 2009-05-04 2012-10-30 Bc Systems, Inc Active centerpoint power bus balancing system
US8698446B2 (en) 2009-09-08 2014-04-15 The Powerwise Group, Inc. Method to save energy for devices with rotating or reciprocating masses
KR101816058B1 (ko) 2009-09-08 2018-01-08 더 파워와이즈 그룹, 인코포레이티드 매스 회전식 또는 왕복식 장치에 의한 에너지 세이브 시스템 및 방법
US8138529B2 (en) * 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
US8624662B2 (en) * 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
US9234943B2 (en) * 2011-12-16 2016-01-12 Lear Corporation Method and system for battery current measurement calibration
CN103178692A (zh) * 2011-12-22 2013-06-26 西门子电气传动有限公司 功率开关器件的驱动装置
US8847631B2 (en) * 2011-12-23 2014-09-30 General Electric Company High speed low loss gate drive circuit
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US9059076B2 (en) * 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
US9537425B2 (en) 2013-07-09 2017-01-03 Transphorm Inc. Multilevel inverters and their components
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
WO2016149146A1 (en) 2015-03-13 2016-09-22 Transphorm, Inc. Paralleling of switching devices for high power circuits
US10498326B2 (en) 2016-03-01 2019-12-03 Texas Instruments Incorporated Output driver with power down protection
US10158288B2 (en) * 2016-11-29 2018-12-18 Dialog Semiconductor (Uk) Limited Apparatus and method of a slope regulator and regulation slope of switching power FETs
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
RU2680343C1 (ru) * 2017-11-02 2019-02-19 Олег Георгиевич Егоров Способ формирования наносекундных импульсов трансформаторными индуктивными накопителями энергии на нагрузке
US11082038B1 (en) 2020-09-10 2021-08-03 Allegro Microsystems, Llc Gate driver isolating circuit
US11075622B1 (en) * 2020-09-10 2021-07-27 Allegro Microsystems, Llc Switch turn on in a gate driver circuit
JP7470084B2 (ja) * 2021-09-10 2024-04-17 株式会社東芝 電子回路、電子システム及び駆動方法
TWI810003B (zh) * 2022-04-27 2023-07-21 大陸商昂寶電子(上海)有限公司 半橋拓撲電路及其控制方法
CN116232011B (zh) * 2023-03-07 2024-01-26 禹创半导体(深圳)有限公司 一种具有能量回收机制的电压转换装置以及一种电源芯片

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE36480E (en) 1990-01-09 2000-01-04 Stmicroelectronics, S.A. Control and monitoring device for a power switch
US5502632A (en) * 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5373435A (en) * 1993-05-07 1994-12-13 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5666280A (en) * 1993-05-07 1997-09-09 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode
US5559402A (en) * 1994-08-24 1996-09-24 Hewlett-Packard Company Power circuit with energy recovery for driving an electroluminescent device
DE69731088D1 (de) 1997-10-31 2004-11-11 St Microelectronics Srl Ausgangsstufe mit hoher Versorgungsspannung zum Steuern einer elektrischen Last
JP3418672B2 (ja) 1998-02-10 2003-06-23 シャープ株式会社 同期整流回路
US6407593B1 (en) * 1999-06-30 2002-06-18 Denso Corporation Electromagnetic load control apparatus having variable drive-starting energy supply
JP4136287B2 (ja) * 2000-07-19 2008-08-20 富士通株式会社 ドライバ回路
US6636431B2 (en) * 2000-12-04 2003-10-21 Nec Tokin Corporation Symmetrical DC/DC converter
FR2819121B1 (fr) * 2000-12-28 2003-04-04 Capra Soc Utilisation d'un transformateur de retour pour la stabilisation d'un circuit resonant dans un convertisseur demi-pont
US6445623B1 (en) 2001-08-22 2002-09-03 Texas Instruments Incorporated Charge pumps with current sources for regulation
JP3983622B2 (ja) * 2002-08-08 2007-09-26 三菱電機株式会社 パワーデバイス駆動回路

Also Published As

Publication number Publication date
EP1494354B1 (de) 2010-12-01
EP1494354A1 (de) 2005-01-05
DE60335180D1 (de) 2011-01-13
US6781423B1 (en) 2004-08-24

Similar Documents

Publication Publication Date Title
DE60335180D1 (de) Hochspannungschnittstelle und Steuerschaltung dafür
US10854500B2 (en) Gate driver circuitry for power transistors
US10096705B2 (en) Integrated high side gate driver structure and circuit for driving high side power transistors
TWI261960B (en) Method and circuit for reducing losses in DC-DC converters
CN206135703U (zh) 驱动电路、集成半导体电路和用于驱动电路的器件
JP5499877B2 (ja) 電力用半導体装置
US9705489B2 (en) Cascode transistor circuit
US8514010B2 (en) Reference current generation circuit and power device using the same
TW200737671A (en) High voltage gate driver IC (HVIC) with internal charge pumping voltage source
TW200504978A (en) Semiconductor device and the power system
WO2005079447A3 (en) Switching power supply controller with built-in supply switching
EP1265254A3 (de) Halbleiteranordnung
CN104134662B (zh) 具有至少部分地集成的驱动器级的功率晶体管
JP2008182381A (ja) 高速ゲート駆動回路
US20090201078A1 (en) Single-chip common-drain JFET device and its applications
EP2442446A3 (de) Hochspannungsausgangstreiber
CN103326699A (zh) 半导体器件
CN111211681A (zh) 半导体装置
EP2073385A3 (de) Halbleiterausgabeschaltung zur Steuerung der Stromversorgung an eine Last
WO2011073095A3 (en) High voltage tolerant inverting charge pump
JP2003143000A5 (de)
JP2004072829A5 (de)
KR101215830B1 (ko) Ldmos 소자를 이용한 스위치 회로
US9525414B2 (en) Gate drive circuit providing constant driving current
JP2017112465A (ja) ゲート駆動回路

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties