ATE495478T1 - Verfahren zur herstellung einer flüssigkristallanzeige - Google Patents

Verfahren zur herstellung einer flüssigkristallanzeige

Info

Publication number
ATE495478T1
ATE495478T1 AT07253703T AT07253703T ATE495478T1 AT E495478 T1 ATE495478 T1 AT E495478T1 AT 07253703 T AT07253703 T AT 07253703T AT 07253703 T AT07253703 T AT 07253703T AT E495478 T1 ATE495478 T1 AT E495478T1
Authority
AT
Austria
Prior art keywords
film
forming area
width
liquid crystal
crystal display
Prior art date
Application number
AT07253703T
Other languages
English (en)
Inventor
Yoshikazu Yoshimoto
Original Assignee
Future Vision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Future Vision Inc filed Critical Future Vision Inc
Application granted granted Critical
Publication of ATE495478T1 publication Critical patent/ATE495478T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal Substances (AREA)
AT07253703T 2006-09-21 2007-09-19 Verfahren zur herstellung einer flüssigkristallanzeige ATE495478T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006255321 2006-09-21
JP2007122731A JP4235921B2 (ja) 2006-09-21 2007-05-07 液晶表示パネルの製造方法および液晶表示パネル

Publications (1)

Publication Number Publication Date
ATE495478T1 true ATE495478T1 (de) 2011-01-15

Family

ID=39224532

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07253703T ATE495478T1 (de) 2006-09-21 2007-09-19 Verfahren zur herstellung einer flüssigkristallanzeige

Country Status (8)

Country Link
US (1) US7626650B2 (de)
EP (1) EP1953588B1 (de)
JP (1) JP4235921B2 (de)
KR (1) KR100933396B1 (de)
CN (1) CN101149506B (de)
AT (1) ATE495478T1 (de)
DE (1) DE602007011882D1 (de)
TW (1) TW200828451A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4235921B2 (ja) * 2006-09-21 2009-03-11 株式会社フューチャービジョン 液晶表示パネルの製造方法および液晶表示パネル
US8114720B2 (en) 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI386689B (zh) * 2009-12-02 2013-02-21 Au Optronics Corp 彩色濾光片基板及其製造方法
KR101902922B1 (ko) 2011-03-03 2018-10-02 삼성전자주식회사 박막 트랜지스터 및 박막 트랜지스터의 제조 방법
TW201243665A (en) * 2011-04-22 2012-11-01 Young Lighting Technology Corp Fabrication method of touch device
JP5756422B2 (ja) * 2012-03-05 2015-07-29 富士フイルム株式会社 パターン形成方法
CA2990282C (en) * 2015-07-03 2023-08-08 National Research Council Of Canada Method of printing ultranarrow line

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251550B1 (en) 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Maskless photolithography system that digitally shifts mask data responsive to alignment data
JP3679943B2 (ja) 1999-03-02 2005-08-03 大日本印刷株式会社 パターン形成体の製造方法
JP2000340928A (ja) * 1999-05-28 2000-12-08 Mitsubishi Paper Mills Ltd プリント基板直描作製方法
KR100893564B1 (ko) * 2001-10-05 2009-04-17 캐보트 코포레이션 저점도 전구체 조성물 및 전도성 전자 형상의 증착 방법
JP3805273B2 (ja) * 2002-03-29 2006-08-02 Ｕｈｔ株式会社 積層型電子部品の製造装置
JP2003318193A (ja) 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP4098039B2 (ja) * 2002-08-30 2008-06-11 シャープ株式会社 パターン形成基材およびパターン形成方法
JP4170049B2 (ja) * 2002-08-30 2008-10-22 シャープ株式会社 パターン形成基材およびパターン形成方法
JP3821079B2 (ja) * 2002-09-24 2006-09-13 セイコーエプソン株式会社 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器並びに非接触型カード媒体
US7575965B2 (en) * 2003-12-02 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device
EP1622435A1 (de) * 2004-07-28 2006-02-01 ATOTECH Deutschland GmbH Verfahren zur Herstellung einer elektronischer Anordnung mittels Direktschreibtechniken
JP4399337B2 (ja) * 2004-09-13 2010-01-13 株式会社フューチャービジョン 平面パターンを有する基板およびそれを用いた表示装置
JP2006114585A (ja) * 2004-10-13 2006-04-27 Seiko Epson Corp 隔壁構造体、隔壁構造体の形成方法、デバイス、電気光学装置及び電子機器
JP2006147827A (ja) * 2004-11-19 2006-06-08 Seiko Epson Corp 配線パターンの形成方法、デバイスの製造方法、デバイス、及び電気光学装置、並びに電子機器
JP4792228B2 (ja) * 2005-01-28 2011-10-12 シャープ株式会社 表示装置
JP4235921B2 (ja) * 2006-09-21 2009-03-11 株式会社フューチャービジョン 液晶表示パネルの製造方法および液晶表示パネル

Also Published As

Publication number Publication date
KR20080027131A (ko) 2008-03-26
JP4235921B2 (ja) 2009-03-11
EP1953588B1 (de) 2011-01-12
TWI349971B (de) 2011-10-01
TW200828451A (en) 2008-07-01
JP2008102485A (ja) 2008-05-01
DE602007011882D1 (de) 2011-02-24
US20080074573A1 (en) 2008-03-27
US7626650B2 (en) 2009-12-01
EP1953588A1 (de) 2008-08-06
CN101149506A (zh) 2008-03-26
CN101149506B (zh) 2010-06-09
KR100933396B1 (ko) 2009-12-22

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