ATE497608T1 - Antireflexionsbeschichtungszusammensetzung und verfahren zum belichten eines photoresists unter ihre anwendung - Google Patents

Antireflexionsbeschichtungszusammensetzung und verfahren zum belichten eines photoresists unter ihre anwendung

Info

Publication number
ATE497608T1
ATE497608T1 AT07825410T AT07825410T ATE497608T1 AT E497608 T1 ATE497608 T1 AT E497608T1 AT 07825410 T AT07825410 T AT 07825410T AT 07825410 T AT07825410 T AT 07825410T AT E497608 T1 ATE497608 T1 AT E497608T1
Authority
AT
Austria
Prior art keywords
coating composition
photoresist
exposing
reflection coating
alkyl
Prior art date
Application number
AT07825410T
Other languages
English (en)
Inventor
Wookyu Kim
Hengpeng Wu
David J Abdallah
Mark Neisser
Pinghung Lu
Ruzhi Zhang
M Rahman
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE497608T1 publication Critical patent/ATE497608T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT07825410T 2006-10-18 2007-10-15 Antireflexionsbeschichtungszusammensetzung und verfahren zum belichten eines photoresists unter ihre anwendung ATE497608T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/550,459 US7666575B2 (en) 2006-10-18 2006-10-18 Antireflective coating compositions
PCT/IB2007/003110 WO2008047217A2 (en) 2006-10-18 2007-10-15 Antireflective coating compositions

Publications (1)

Publication Number Publication Date
ATE497608T1 true ATE497608T1 (de) 2011-02-15

Family

ID=39253631

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07825410T ATE497608T1 (de) 2006-10-18 2007-10-15 Antireflexionsbeschichtungszusammensetzung und verfahren zum belichten eines photoresists unter ihre anwendung

Country Status (10)

Country Link
US (1) US7666575B2 (de)
EP (1) EP2082287B1 (de)
JP (2) JP5418906B2 (de)
KR (1) KR101420460B1 (de)
CN (2) CN103353706A (de)
AT (1) ATE497608T1 (de)
DE (1) DE602007012359D1 (de)
MY (1) MY145768A (de)
TW (1) TWI408185B (de)
WO (1) WO2008047217A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414893B (zh) * 2006-03-14 2013-11-11 Jsr Corp 底層膜形成用組成物及圖型之形成方法
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
KR101220074B1 (ko) * 2010-09-01 2013-01-08 금호석유화학 주식회사 유기 반사 방지막용 흡광제 및 이를 포함하는 유기 반사 방지막용 조성물
US8623589B2 (en) * 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
JP2018025649A (ja) * 2016-08-09 2018-02-15 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層反射防止膜形成組成物
US20200348592A1 (en) * 2019-04-30 2020-11-05 Rohm And Haas Electronic Materials Llc Resist underlayer compositions and methods of forming patterns with such compositions
CN112680052B (zh) 2020-12-23 2022-06-28 上海飞凯材料科技股份有限公司 一种抗反射涂料组合物及其应用
US12191147B2 (en) * 2021-05-27 2025-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Coating composition for photolithography
CN115403976B (zh) * 2022-08-19 2023-04-18 嘉庚创新实验室 一种抗反射涂层组合物
TW202519990A (zh) * 2023-08-30 2025-05-16 日商日產化學股份有限公司 用於自組裝材料之下層膜材料

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) * 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4251665A (en) * 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4200729A (en) * 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5187019A (en) * 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6114085A (en) * 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6368773B1 (en) * 1998-11-27 2002-04-09 Hyundai Electronics Industries Co., Ltd. Photoresist cross-linker and photoresist composition comprising the same
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
KR100400243B1 (ko) * 1999-06-26 2003-10-01 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100574482B1 (ko) * 1999-09-07 2006-04-27 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100427440B1 (ko) 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
KR100359862B1 (ko) * 1999-12-23 2002-11-09 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
KR100549574B1 (ko) * 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
KR20030076228A (ko) 2000-06-21 2003-09-26 아사히 가라스 가부시키가이샤 레지스트 조성물
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
WO2002065212A1 (en) * 2001-02-09 2002-08-22 Asahi Glass Company, Limited Resist composition
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7138218B2 (en) * 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
KR100636663B1 (ko) * 2002-06-24 2006-10-23 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
JP2005010486A (ja) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
US7081325B2 (en) * 2003-06-27 2006-07-25 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition including the same
KR100570206B1 (ko) 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
EP1743363A4 (de) * 2004-03-12 2010-08-11 Fujifilm Electronic Materials Wärmeausgehärtete grundbeschichtung für lithographische anwendung
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
KR100732763B1 (ko) * 2005-10-31 2007-06-27 주식회사 하이닉스반도체 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US20070298349A1 (en) * 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions

Also Published As

Publication number Publication date
CN101529336B (zh) 2013-08-21
US20080096125A1 (en) 2008-04-24
MY145768A (en) 2012-04-13
WO2008047217A3 (en) 2008-07-03
JP2013156647A (ja) 2013-08-15
WO2008047217A8 (en) 2009-04-23
JP2010506992A (ja) 2010-03-04
EP2082287A2 (de) 2009-07-29
CN101529336A (zh) 2009-09-09
KR101420460B1 (ko) 2014-07-28
JP5418906B2 (ja) 2014-02-19
TWI408185B (zh) 2013-09-11
US7666575B2 (en) 2010-02-23
DE602007012359D1 (de) 2011-03-17
EP2082287B1 (de) 2011-02-02
KR20090068332A (ko) 2009-06-26
CN103353706A (zh) 2013-10-16
WO2008047217A2 (en) 2008-04-24
TW200831621A (en) 2008-08-01

Similar Documents

Publication Publication Date Title
ATE497608T1 (de) Antireflexionsbeschichtungszusammensetzung und verfahren zum belichten eines photoresists unter ihre anwendung
EP2861638B1 (de) Negativ wirkende lackdickschicht
MY145421A (en) Antireflective composition for photoresists
JP2007188082A5 (de)
MY159841A (en) Antireflective compositions and methods of using same
TW200739268A (en) Antireflection film composition, substrate, and patterning process
JP2001520118A5 (de)
WO2007110773A3 (en) Negative photoresist compositions
KR950018340A (ko) 히드록실아민 및 알카놀아민을 포함하는 수성 스트립핑 조성물 및 그 사용방법
CN103562793A (zh) 感光性硅氧烷树脂组合物
TW200506520A (en) Novel photosensitive resin compositions
ATE550319T1 (de) Verfahren zur herstellung eines aminoacetylpyrrolidincarbonitrilderivats
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
WO2013042973A3 (ko) Ｉ-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법
WO2008090827A1 (ja) ポジ型感光性樹脂組成物
EP2329320A4 (de) Positive resistzusammensetzung für immersionsbelichtung und strukturformungsverfahren
CN103172518A (zh) 新的丙烯酸类单体、聚合物以及包含该聚合物的抗蚀剂组合物
CN107814694A (zh) 芴类引发剂、其制备方法、具有其的光固化组合物及其在光固化领域的应用
KR101758393B1 (ko) 감광성 수지 조성물, 패턴 형성 방법, 컬러 필터 및 표시 장치
WO2011014011A3 (ko) 가교성 경화 물질을 포함하는 포토레지스트 조성물
TWI272454B (en) Positive resist composition and method of forming a resist pattern
TWI818965B (zh) 負型超厚膜光阻組合物及在塗層中形成影像之方法
JP2021196577A (ja) 感放射線性組成物、硬化膜及びその製造方法、半導体素子並びに表示素子
TW200834244A (en) Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film
TW200519537A (en) Organic anti-reflective coating composition and method for forming photoresist pattern using the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties