ATE497638T1 - Solarzellenmodul - Google Patents

Solarzellenmodul

Info

Publication number
ATE497638T1
ATE497638T1 AT07252876T AT07252876T ATE497638T1 AT E497638 T1 ATE497638 T1 AT E497638T1 AT 07252876 T AT07252876 T AT 07252876T AT 07252876 T AT07252876 T AT 07252876T AT E497638 T1 ATE497638 T1 AT E497638T1
Authority
AT
Austria
Prior art keywords
photovoltaic element
light receiving
surface side
protective member
receiving surface
Prior art date
Application number
AT07252876T
Other languages
English (en)
Inventor
Takeshi Nakashima
Eiji Maruyama
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of ATE497638T1 publication Critical patent/ATE497638T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
AT07252876T 2006-07-20 2007-07-19 Solarzellenmodul ATE497638T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006198721A JP4568254B2 (ja) 2006-07-20 2006-07-20 太陽電池モジュール

Publications (1)

Publication Number Publication Date
ATE497638T1 true ATE497638T1 (de) 2011-02-15

Family

ID=38657857

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07252876T ATE497638T1 (de) 2006-07-20 2007-07-19 Solarzellenmodul

Country Status (6)

Country Link
US (1) US7741558B2 (de)
EP (1) EP1881534B1 (de)
JP (1) JP4568254B2 (de)
AT (1) ATE497638T1 (de)
DE (1) DE602007012327D1 (de)
ES (1) ES2360141T3 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010009295A2 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
JP2010034275A (ja) * 2008-07-29 2010-02-12 Toyo Aluminium Kk 太陽電池モジュール用裏面保護シート
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
FR2936905B1 (fr) * 2008-10-02 2010-10-29 Commissariat Energie Atomique Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication.
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP5362379B2 (ja) * 2009-02-06 2013-12-11 三洋電機株式会社 太陽電池のｉ−ｖ特性の測定方法
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
EP2450961B1 (de) * 2009-07-03 2016-10-05 Kaneka Corporation Kristalline silicium-solarzelle und herstellungsverfahren dafür
KR101070024B1 (ko) * 2009-07-21 2011-10-04 삼성전기주식회사 박막형 태양전지 및 그 제조방법
JP5533878B2 (ja) * 2009-09-18 2014-06-25 三洋電機株式会社 太陽電池、太陽電池モジュールおよび太陽電池システム
EP2479797A4 (de) * 2009-09-18 2013-08-07 Sanyo Electric Co Solarbatterie, solarbatteriemodul und solarbatteriesystem
JP2011077454A (ja) * 2009-10-01 2011-04-14 Kaneka Corp 結晶シリコン系太陽電池とその製造方法
KR101113007B1 (ko) 2010-02-19 2012-03-13 한국과학기술원 유기 광전변환물질을 포함하는 탄뎀형 태양전지
CN102792387B (zh) * 2010-03-19 2014-09-10 住友金属矿山株式会社 透明导电膜
JP5541980B2 (ja) * 2010-06-24 2014-07-09 株式会社カネカ 結晶シリコン系太陽電池およびその製造方法
JPWO2012020682A1 (ja) * 2010-08-09 2013-10-28 株式会社カネカ 結晶シリコン系太陽電池
JP5764828B2 (ja) 2011-02-04 2015-08-19 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
JP5842170B2 (ja) * 2011-06-23 2016-01-13 パナソニックＩｐマネジメント株式会社 太陽電池モジュール
US20130180577A1 (en) * 2012-01-18 2013-07-18 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
ES2873473T5 (es) * 2012-07-02 2024-06-07 Meyer Burger Germany Gmbh Procedimientos de fabricación de células solares de heterounión con aislamiento de bordes
KR101979843B1 (ko) * 2013-03-13 2019-05-17 엘지전자 주식회사 태양전지
JP2015072938A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子及びその製造方法
JP2015072939A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
JP2015072936A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
JP2015070255A (ja) * 2013-10-01 2015-04-13 長州産業株式会社 光発電素子及びその製造方法
US9401438B2 (en) 2013-11-13 2016-07-26 Industrial Technology Research Institute Solar cell module and solar cell thereof
CN104638040A (zh) * 2013-11-13 2015-05-20 财团法人工业技术研究院 太阳能电池组
CN120379349B (zh) * 2025-06-26 2025-10-28 天合光能股份有限公司 太阳能电池、光伏组件和太阳能电池的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318724A (ja) 1993-05-07 1994-11-15 Canon Inc 電極及び光起電力素子
JPH0783131A (ja) 1993-09-20 1995-03-28 Hiroshi Maekawa 液体燃料改質装置
JPH07278791A (ja) 1994-04-15 1995-10-24 Hitachi Ltd 低抵抗透明導電膜
JPH0864848A (ja) * 1994-08-23 1996-03-08 Canon Inc 光電気変換装置、反射防止膜及び電極基板
DE69936526T3 (de) * 1998-06-01 2009-06-25 Kaneka Corp. Silizium dünnschicht photoelektrische vorrichtung
JP4661021B2 (ja) 2000-07-12 2011-03-30 株式会社カネカ 太陽電池モジュール、太陽電池モジュールの設置構造、及びその設置構造を有した発電機能付き屋根
JP2002335003A (ja) 2001-05-10 2002-11-22 Canon Inc 光起電力素子
JP3797317B2 (ja) * 2002-05-30 2006-07-19 住友金属鉱山株式会社 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子
JP4152197B2 (ja) 2003-01-16 2008-09-17 三洋電機株式会社 光起電力装置
JP2005175160A (ja) 2003-12-10 2005-06-30 Sanyo Electric Co Ltd 光起電力装置
JP4266840B2 (ja) 2004-01-29 2009-05-20 三洋電機株式会社 太陽電池モジュール
JP4229858B2 (ja) 2004-03-16 2009-02-25 三洋電機株式会社 光電変換装置

Also Published As

Publication number Publication date
JP4568254B2 (ja) 2010-10-27
ES2360141T3 (es) 2011-06-01
US7741558B2 (en) 2010-06-22
EP1881534B1 (de) 2011-02-02
EP1881534A2 (de) 2008-01-23
DE602007012327D1 (de) 2011-03-17
US20080023068A1 (en) 2008-01-31
JP2008028133A (ja) 2008-02-07
EP1881534A3 (de) 2009-02-25

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