ATE498945T1 - Steuerverfahren und schaltung für leistungshalbleiterbauelemente - Google Patents

Steuerverfahren und schaltung für leistungshalbleiterbauelemente

Info

Publication number
ATE498945T1
ATE498945T1 AT07804437T AT07804437T ATE498945T1 AT E498945 T1 ATE498945 T1 AT E498945T1 AT 07804437 T AT07804437 T AT 07804437T AT 07804437 T AT07804437 T AT 07804437T AT E498945 T1 ATE498945 T1 AT E498945T1
Authority
AT
Austria
Prior art keywords
voltage
power semiconductor
semiconductor switching
switching device
diode
Prior art date
Application number
AT07804437T
Other languages
English (en)
Inventor
Patrick Reginald Palmer
Yalan Wang
Angus Toby Bryant
Original Assignee
Cambridge Entpr Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=37232833&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE498945(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cambridge Entpr Ltd filed Critical Cambridge Entpr Ltd
Application granted granted Critical
Publication of ATE498945T1 publication Critical patent/ATE498945T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08148Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Networks Using Active Elements (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Amplifiers (AREA)
AT07804437T 2006-09-13 2007-09-10 Steuerverfahren und schaltung für leistungshalbleiterbauelemente ATE498945T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0617990.7A GB0617990D0 (en) 2006-09-13 2006-09-13 Control of power semiconductor devices
PCT/GB2007/050531 WO2008032113A1 (en) 2006-09-13 2007-09-10 Control method and circuit for power semiconductor devices

Publications (1)

Publication Number Publication Date
ATE498945T1 true ATE498945T1 (de) 2011-03-15

Family

ID=37232833

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07804437T ATE498945T1 (de) 2006-09-13 2007-09-10 Steuerverfahren und schaltung für leistungshalbleiterbauelemente

Country Status (8)

Country Link
US (1) US8004317B2 (de)
EP (1) EP2089968B2 (de)
JP (1) JP5122571B2 (de)
CN (1) CN101617471B (de)
AT (1) ATE498945T1 (de)
DE (1) DE602007012576D1 (de)
GB (1) GB0617990D0 (de)
WO (1) WO2008032113A1 (de)

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DE102011077387A1 (de) 2011-06-10 2012-07-12 Siemens Aktiengesellschaft Schaltungsanordnung zum Schalten eines Stromes und Verfahren zum Betreiben derselben
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US8723491B2 (en) 2011-12-19 2014-05-13 Arctic Sand Technologies, Inc. Control of power converters with capacitive energy transfer
CN103166435B (zh) * 2011-12-19 2014-12-03 中国电力科学研究院 一种基于igbt串联损耗优化电压自适应控制方法
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TW201640796A (zh) 2015-03-13 2016-11-16 亞提克聖德技術股份有限公司 具有用於促進電容器間絕能耗電荷傳輸的電感器之直流對直流變壓器
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JP6819779B2 (ja) * 2017-05-16 2021-01-27 富士電機株式会社 制御装置及び半導体装置
CN107819461B (zh) * 2017-09-29 2021-02-12 杭州飞仕得科技有限公司 一种数控有源的igbt驱动电路
US10461732B1 (en) * 2018-06-18 2019-10-29 Infineon Technologies Austria Ag System and method of driving a power switch in combination with regulated DI/DT and/or DV/DT
CN108964643A (zh) * 2018-06-27 2018-12-07 深圳市汇北川电子技术有限公司 一种带电流镜像端的功率器件的驱动控制电路及控制方法
CN109240408B (zh) * 2018-10-31 2020-09-25 西安理工大学 SiCMOSFET门极驱动电压控制电路及其控制方法
CN109412394A (zh) * 2018-11-01 2019-03-01 湖南大学 抑制igbt和mosfet电磁干扰的开环有源电压驱动电路及方法
CN111262567B (zh) * 2018-11-30 2023-06-23 株洲中车时代半导体有限公司 一种有源栅极驱动控制电路和控制方法
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EP3849083A1 (de) * 2020-01-07 2021-07-14 Hamilton Sundstrand Corporation Gate-treiber
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CN111208410B (zh) * 2020-01-13 2025-03-28 北京华峰测控技术股份有限公司 一种电压电流源测试电路及测试方法
CN111313874A (zh) * 2020-03-18 2020-06-19 上海海事大学 一种用于SiC MOSFET的电流检测装置及短路保护方法
CN111294034B (zh) * 2020-03-23 2024-04-02 广东美的白色家电技术创新中心有限公司 栅极驱动电路、功率开关电路及电器设备
CN112953481B (zh) * 2021-01-27 2022-09-27 复旦大学 GaN晶体管的驱动模块、开关电路与电子设备
JP7592161B2 (ja) * 2021-06-01 2024-11-29 三菱電機株式会社 電力用半導体素子の駆動調整回路、パワーモジュール、および電力変換装置
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CN116106716A (zh) * 2023-02-28 2023-05-12 苏州鉴芯信息科技有限公司 一种面向电力电子桥臂组件中的器件关断时间检测系统
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Also Published As

Publication number Publication date
US20100060326A1 (en) 2010-03-11
EP2089968B1 (de) 2011-02-16
GB0617990D0 (en) 2006-10-18
JP5122571B2 (ja) 2013-01-16
EP2089968A1 (de) 2009-08-19
JP2010528570A (ja) 2010-08-19
CN101617471B (zh) 2012-12-19
WO2008032113A1 (en) 2008-03-20
DE602007012576D1 (de) 2011-03-31
US8004317B2 (en) 2011-08-23
EP2089968B2 (de) 2014-03-12
CN101617471A (zh) 2009-12-30

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