ATE499683T1 - Leseversatzverstärker für das lesen von speichern mit variablem widerstand - Google Patents
Leseversatzverstärker für das lesen von speichern mit variablem widerstandInfo
- Publication number
- ATE499683T1 ATE499683T1 AT04760935T AT04760935T ATE499683T1 AT E499683 T1 ATE499683 T1 AT E499683T1 AT 04760935 T AT04760935 T AT 04760935T AT 04760935 T AT04760935 T AT 04760935T AT E499683 T1 ATE499683 T1 AT E499683T1
- Authority
- AT
- Austria
- Prior art keywords
- variable resistance
- resistance memory
- memory reading
- read offset
- offset amplifier
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Investigating Or Analysing Biological Materials (AREA)
- Read Only Memory (AREA)
- Amplifiers (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/434,087 US6888771B2 (en) | 2003-05-09 | 2003-05-09 | Skewed sense AMP for variable resistance memory sensing |
| PCT/US2004/014391 WO2004102577A1 (en) | 2003-05-09 | 2004-05-07 | Skewed sense amp for variable resistance memory sensing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE499683T1 true ATE499683T1 (de) | 2011-03-15 |
Family
ID=33416613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04760935T ATE499683T1 (de) | 2003-05-09 | 2004-05-07 | Leseversatzverstärker für das lesen von speichern mit variablem widerstand |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6888771B2 (de) |
| EP (1) | EP1623429B1 (de) |
| JP (1) | JP2007502513A (de) |
| KR (1) | KR100679457B1 (de) |
| CN (1) | CN1820323B (de) |
| AT (1) | ATE499683T1 (de) |
| DE (1) | DE602004031520D1 (de) |
| TW (1) | TWI237275B (de) |
| WO (1) | WO2004102577A1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6888771B2 (en) * | 2003-05-09 | 2005-05-03 | Micron Technology, Inc. | Skewed sense AMP for variable resistance memory sensing |
| US7020035B1 (en) | 2003-10-10 | 2006-03-28 | Sun Microsystems, Inc. | Measuring and correcting sense amplifier and memory mismatches using NBTI |
| US7164612B1 (en) * | 2003-10-10 | 2007-01-16 | Sun Microsystems, Inc. | Test circuit for measuring sense amplifier and memory mismatches |
| DE102004045219B4 (de) * | 2004-09-17 | 2011-07-28 | Qimonda AG, 81739 | Anordnung und Verfahren zum Auslesen von Widerstandsspeicherzellen |
| JP5248019B2 (ja) * | 2007-01-09 | 2013-07-31 | エルピーダメモリ株式会社 | 半導体記憶装置、及びそのセンスアンプ回路 |
| KR101389202B1 (ko) * | 2007-08-29 | 2014-04-24 | 에이저 시스템즈 엘엘시 | 감지 증폭기, 집적 회로, 전자 시스템 및 오프셋을 감소시키는 방법 |
| US8315119B2 (en) * | 2009-02-26 | 2012-11-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sense amplifier scheme for low voltage SRAM and register files |
| US7893746B1 (en) * | 2009-10-14 | 2011-02-22 | Texas Instruments Incorporated | High speed intra-pair de-skew circuit |
| JP5359798B2 (ja) * | 2009-11-10 | 2013-12-04 | ソニー株式会社 | メモリデバイスおよびその読み出し方法 |
| KR101847890B1 (ko) * | 2010-10-12 | 2018-04-12 | 삼성세미콘덕터, 인코포레이티드 | 슈도 페이지 모드 메모리 아키텍쳐 및 방법 |
| US9070424B2 (en) * | 2012-06-29 | 2015-06-30 | Samsung Electronics Co., Ltd. | Sense amplifier circuitry for resistive type memory |
| KR102190868B1 (ko) | 2014-09-17 | 2020-12-15 | 삼성전자주식회사 | 비트라인 연결 배선 저항 차를 보상하는 반도체 메모리 장치 |
| US9911501B2 (en) * | 2016-05-24 | 2018-03-06 | Silicon Storage Technology, Inc. | Sensing amplifier comprising a built-in sensing offset for flash memory devices |
| US10354728B2 (en) | 2017-06-28 | 2019-07-16 | Sandisk Technologies Llc | Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory |
| US10256402B1 (en) | 2017-09-25 | 2019-04-09 | Sandisk Technologies Llc | ReRAM read state verification based on cell turn-on characteristics |
| KR102893570B1 (ko) * | 2020-09-09 | 2025-11-28 | 삼성전자주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 데이터 리드 방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0700049A1 (de) | 1994-08-31 | 1996-03-06 | STMicroelectronics S.r.l. | Leseschaltung für Speicherzellen |
| US5767862A (en) * | 1996-03-15 | 1998-06-16 | Rendition, Inc. | Method and apparatus for self-throttling video FIFO |
| US6473336B2 (en) | 1999-12-16 | 2002-10-29 | Kabushiki Kaisha Toshiba | Magnetic memory device |
| US6191989B1 (en) * | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| JP3985432B2 (ja) | 2000-06-19 | 2007-10-03 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| TW584976B (en) | 2000-11-09 | 2004-04-21 | Sanyo Electric Co | Magnetic memory device |
| US6567297B2 (en) | 2001-02-01 | 2003-05-20 | Micron Technology, Inc. | Method and apparatus for sensing resistance values of memory cells |
| JP4818519B2 (ja) * | 2001-02-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 磁気記憶装置 |
| US6504750B1 (en) | 2001-08-27 | 2003-01-07 | Micron Technology, Inc. | Resistive memory element sensing using averaging |
| US6873538B2 (en) * | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
| US6903965B2 (en) * | 2002-07-18 | 2005-06-07 | Renesas Technology Corp. | Thin film magnetic memory device permitting high precision data read |
| US6888771B2 (en) * | 2003-05-09 | 2005-05-03 | Micron Technology, Inc. | Skewed sense AMP for variable resistance memory sensing |
-
2003
- 2003-05-09 US US10/434,087 patent/US6888771B2/en not_active Expired - Lifetime
-
2004
- 2004-05-07 KR KR1020057021335A patent/KR100679457B1/ko not_active Expired - Lifetime
- 2004-05-07 WO PCT/US2004/014391 patent/WO2004102577A1/en not_active Ceased
- 2004-05-07 DE DE602004031520T patent/DE602004031520D1/de not_active Expired - Lifetime
- 2004-05-07 AT AT04760935T patent/ATE499683T1/de not_active IP Right Cessation
- 2004-05-07 CN CN2004800194571A patent/CN1820323B/zh not_active Expired - Lifetime
- 2004-05-07 EP EP04760935A patent/EP1623429B1/de not_active Expired - Lifetime
- 2004-05-07 JP JP2006532872A patent/JP2007502513A/ja active Pending
- 2004-05-07 TW TW093112972A patent/TWI237275B/zh not_active IP Right Cessation
-
2005
- 2005-03-24 US US11/089,132 patent/US7251177B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004102577A1 (en) | 2004-11-25 |
| KR20060009321A (ko) | 2006-01-31 |
| TWI237275B (en) | 2005-08-01 |
| JP2007502513A (ja) | 2007-02-08 |
| US20040223393A1 (en) | 2004-11-11 |
| EP1623429B1 (de) | 2011-02-23 |
| CN1820323A (zh) | 2006-08-16 |
| KR100679457B1 (ko) | 2007-02-06 |
| TW200504762A (en) | 2005-02-01 |
| US6888771B2 (en) | 2005-05-03 |
| CN1820323B (zh) | 2011-06-08 |
| EP1623429A1 (de) | 2006-02-08 |
| US7251177B2 (en) | 2007-07-31 |
| DE602004031520D1 (de) | 2011-04-07 |
| US20050180208A1 (en) | 2005-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |