ATE500619T1 - Halbleiteranordnung und optoelektronische platte - Google Patents
Halbleiteranordnung und optoelektronische platteInfo
- Publication number
- ATE500619T1 ATE500619T1 AT01130685T AT01130685T ATE500619T1 AT E500619 T1 ATE500619 T1 AT E500619T1 AT 01130685 T AT01130685 T AT 01130685T AT 01130685 T AT01130685 T AT 01130685T AT E500619 T1 ATE500619 T1 AT E500619T1
- Authority
- AT
- Austria
- Prior art keywords
- transmission region
- optical transmission
- semiconductor arrangement
- semiconductor device
- receiving part
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3608—Fibre wiring boards, i.e. where fibres are embedded or attached in a pattern on or to a substrate, e.g. flexible sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
- Led Device Packages (AREA)
- Optical Couplings Of Light Guides (AREA)
- Structure Of Printed Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000400966 | 2000-12-28 | ||
| JP2001379831A JP2002286959A (ja) | 2000-12-28 | 2001-12-13 | 半導体装置、光電融合基板、及びそれらの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE500619T1 true ATE500619T1 (de) | 2011-03-15 |
Family
ID=26607076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01130685T ATE500619T1 (de) | 2000-12-28 | 2001-12-21 | Halbleiteranordnung und optoelektronische platte |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6897430B2 (de) |
| EP (1) | EP1219994B1 (de) |
| JP (1) | JP2002286959A (de) |
| AT (1) | ATE500619T1 (de) |
| DE (1) | DE60144137D1 (de) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286959A (ja) * | 2000-12-28 | 2002-10-03 | Canon Inc | 半導体装置、光電融合基板、及びそれらの製造方法 |
| US8143108B2 (en) * | 2004-10-07 | 2012-03-27 | Stats Chippac, Ltd. | Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate |
| USRE44438E1 (en) | 2001-02-27 | 2013-08-13 | Stats Chippac, Ltd. | Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate |
| US20020121707A1 (en) * | 2001-02-27 | 2002-09-05 | Chippac, Inc. | Super-thin high speed flip chip package |
| US6936854B2 (en) * | 2001-05-10 | 2005-08-30 | Canon Kabushiki Kaisha | Optoelectronic substrate |
| EP1286194A3 (de) | 2001-08-21 | 2004-05-19 | Canon Kabushiki Kaisha | Optische Wellenleitervorrichtung |
| JP3768901B2 (ja) * | 2002-02-28 | 2006-04-19 | 松下電器産業株式会社 | 立体光導波路の製造方法 |
| JP3833131B2 (ja) * | 2002-03-25 | 2006-10-11 | キヤノン株式会社 | 光伝送装置 |
| JP3833132B2 (ja) * | 2002-03-25 | 2006-10-11 | キヤノン株式会社 | 光導波装置の製造方法 |
| JP3848210B2 (ja) * | 2002-05-29 | 2006-11-22 | キヤノン株式会社 | 電子回路基板 |
| JP2004031508A (ja) * | 2002-06-24 | 2004-01-29 | Nec Corp | 光電気複合モジュールおよびそのモジュールを構成要素とする光入出力装置 |
| TWI294262B (en) | 2002-06-28 | 2008-03-01 | Matsushita Electric Industrial Co Ltd | A light reception/emission device built-in module with optical and electrical wiring combined therein and method of making the same |
| US20040012978A1 (en) * | 2002-07-18 | 2004-01-22 | Yutaka Doi | Direct deposition waveguide mirror |
| JP2004069798A (ja) | 2002-08-02 | 2004-03-04 | Canon Inc | 光電融合ビアをもつ光電融合配線基板 |
| JP3927883B2 (ja) | 2002-08-02 | 2007-06-13 | キヤノン株式会社 | 光導波装置、およびそれを用いた光電融合基板 |
| JP3897688B2 (ja) * | 2002-12-11 | 2007-03-28 | キヤノン株式会社 | 光電融合配線基板 |
| JP2004317717A (ja) | 2003-04-15 | 2004-11-11 | Canon Inc | 再構成可能な光電融合回路 |
| JP4058764B2 (ja) * | 2003-06-26 | 2008-03-12 | 住友電気工業株式会社 | 通信モジュール |
| KR20050004005A (ko) * | 2003-07-01 | 2005-01-12 | 마츠시타 덴끼 산교 가부시키가이샤 | 실장체, 광 전송로 및 광 전기 회로기판 |
| JP4510532B2 (ja) * | 2003-07-01 | 2010-07-28 | パナソニック株式会社 | 実装体、光伝送路および光電気回路基板 |
| EP1668702A1 (de) * | 2003-09-05 | 2006-06-14 | Adrian H. Kitai | Sphärengetragene dünnfilm-leuchtschicht-elektrolumineszenz-einrichtungen |
| US7248757B2 (en) * | 2003-12-15 | 2007-07-24 | Canon Kabushiki Kaisha | Method, device and computer program for designing a circuit having electric wires and optical connections |
| AT413891B (de) * | 2003-12-29 | 2006-07-15 | Austria Tech & System Tech | Leiterplattenelement mit wenigstens einem licht-wellenleiter sowie verfahren zur herstellung eines solchen leiterplattenelements |
| US7251393B2 (en) * | 2004-03-30 | 2007-07-31 | Lockheed Martin Corporation | Optical router |
| JP2006053662A (ja) * | 2004-08-10 | 2006-02-23 | Matsushita Electric Ind Co Ltd | 多重プロセッサ |
| EP1679749A1 (de) * | 2005-01-11 | 2006-07-12 | Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 | Halbleiter Photodiode und Verfahren zur Herstellung |
| CN101421650B (zh) * | 2006-04-14 | 2014-05-14 | 欧姆龙株式会社 | 光传输模块、连接部件以及具有光传输模块的电子设备 |
| JP2007310016A (ja) * | 2006-05-16 | 2007-11-29 | Olympus Corp | 光学系 |
| JP5185683B2 (ja) * | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ｌｅｄモジュールの製造方法および照明器具の製造方法 |
| JP2009283801A (ja) * | 2008-05-26 | 2009-12-03 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
| JPWO2010038871A1 (ja) * | 2008-10-03 | 2012-03-01 | ソニー株式会社 | 半導体装置 |
| US8041230B2 (en) * | 2008-12-12 | 2011-10-18 | Fujitsu Limited | System and method for optoelectrical communication |
| US8041229B2 (en) * | 2008-12-12 | 2011-10-18 | Fujitsu Limited | System and method for optoelectrical communication |
| JPWO2010140604A1 (ja) * | 2009-06-05 | 2012-11-22 | 先端フォトニクス株式会社 | サブマウント、これを備えた光モジュール、及びサブマウントの製造方法 |
| JP2011053354A (ja) * | 2009-08-31 | 2011-03-17 | Toshiba Corp | 光電気配線フィルムおよび光電気配線モジュール |
| US8428401B2 (en) * | 2009-12-16 | 2013-04-23 | Telefonaktiebolaget L M Ericsson (Publ) | On-chip optical waveguide |
| JP2011138909A (ja) * | 2009-12-28 | 2011-07-14 | Clean Venture 21 Corp | 光電変換素子およびその製造方法、ならびに光電変換装置およびその製造方法 |
| US9852670B2 (en) | 2010-02-25 | 2017-12-26 | Luminator Holding Lp | System and method for wireless control of signs |
| JP6326379B2 (ja) | 2012-03-08 | 2018-05-16 | ディー−ウェイブ システムズ，インコーポレイテッド | 超伝導集積回路の製作のためのシステムおよび方法 |
| CN104977086B (zh) * | 2014-04-01 | 2018-08-24 | 热映光电股份有限公司 | 外接式温度感测模块及其温度感测方法、及温度感测系统 |
| US10627490B2 (en) | 2016-01-31 | 2020-04-21 | Velodyne Lidar, Inc. | Multiple pulse, LIDAR based 3-D imaging |
| JP7165587B2 (ja) | 2016-06-01 | 2022-11-04 | ベロダイン ライダー ユーエスエー，インコーポレイテッド | 多重ピクセル走査ｌｉｄａｒ |
| JP2018105925A (ja) * | 2016-12-22 | 2018-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| EP4142457B1 (de) | 2017-02-01 | 2024-07-10 | D-Wave Systems Inc. | Systeme und verfahren zur herstellung von supraleitenden integrierten schaltungen |
| WO2018183843A1 (en) * | 2017-03-31 | 2018-10-04 | Velodyne Lidar, Inc. | Integrated lidar illumination power control |
| CA3062701A1 (en) | 2017-05-08 | 2018-11-15 | Velodyne Lidar, Inc. | Lidar data acquisition and control |
| CN116772646A (zh) * | 2018-04-16 | 2023-09-19 | 罗米·M·费恩 | 被动辐射冷却的制造方法、结构及用途 |
| JP2019197126A (ja) * | 2018-05-09 | 2019-11-14 | 日本電信電話株式会社 | 光デバイスおよび光結合方法 |
| US10712434B2 (en) | 2018-09-18 | 2020-07-14 | Velodyne Lidar, Inc. | Multi-channel LIDAR illumination driver |
| US11885958B2 (en) | 2019-01-07 | 2024-01-30 | Velodyne Lidar Usa, Inc. | Systems and methods for a dual axis resonant scanning mirror |
| WO2020168097A1 (en) | 2019-02-15 | 2020-08-20 | D-Wave Systems Inc. | Kinetic inductance for couplers and compact qubits |
| JP6794498B1 (ja) | 2019-06-04 | 2020-12-02 | 浜松ホトニクス株式会社 | 発光装置、及び発光装置の製造方法 |
| FI4070392T3 (fi) | 2019-12-05 | 2026-04-13 | D Wave Systems Inc | Järjestelmiä ja menetelmiä suprajohtavien integroitujen piirien valmistamiseksi |
| US12376501B2 (en) | 2020-05-11 | 2025-07-29 | 1372934 B.C. Ltd. | Kinetic inductance devices, methods for fabricating kinetic inductance devices, and articles employing the same |
| CN113707787B (zh) * | 2020-05-22 | 2023-07-18 | 重庆康佳光电技术研究院有限公司 | 球形倒装微型led及其制造方法、显示面板 |
| JP7138149B2 (ja) * | 2020-11-11 | 2022-09-15 | 浜松ホトニクス株式会社 | 受光装置、及び受光装置の製造方法 |
| US12392823B2 (en) | 2021-11-05 | 2025-08-19 | D-Wave Systems Inc. | Systems and methods for on-chip noise measurements |
| CN115000282A (zh) * | 2022-05-19 | 2022-09-02 | 深圳市华星光电半导体显示技术有限公司 | Led芯片及其显示面板和制作方法 |
| CN118263248A (zh) * | 2024-02-21 | 2024-06-28 | 深圳大学 | 立体氮化镓基高集成hemt及其制备方法 |
| CN119509333B (zh) * | 2024-11-14 | 2026-04-17 | 江西万年芯微电子有限公司 | 基于金属固相扩散的传感器及加工方法 |
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-
2001
- 2001-12-13 JP JP2001379831A patent/JP2002286959A/ja active Pending
- 2001-12-21 DE DE60144137T patent/DE60144137D1/de not_active Expired - Lifetime
- 2001-12-21 EP EP20010130685 patent/EP1219994B1/de not_active Expired - Lifetime
- 2001-12-21 AT AT01130685T patent/ATE500619T1/de not_active IP Right Cessation
- 2001-12-26 US US10/025,928 patent/US6897430B2/en not_active Expired - Fee Related
-
2005
- 2005-03-11 US US11/076,991 patent/US6936808B2/en not_active Expired - Fee Related
- 2005-07-26 US US11/188,748 patent/US7141778B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6897430B2 (en) | 2005-05-24 |
| DE60144137D1 (de) | 2011-04-14 |
| EP1219994A3 (de) | 2004-11-10 |
| US20050151062A1 (en) | 2005-07-14 |
| US6936808B2 (en) | 2005-08-30 |
| JP2002286959A (ja) | 2002-10-03 |
| EP1219994B1 (de) | 2011-03-02 |
| EP1219994A2 (de) | 2002-07-03 |
| US20060001117A1 (en) | 2006-01-05 |
| US7141778B2 (en) | 2006-11-28 |
| US20020109074A1 (en) | 2002-08-15 |
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| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |