ATE501520T1 - Kaltfeldemitter - Google Patents

Kaltfeldemitter

Info

Publication number
ATE501520T1
ATE501520T1 AT08100824T AT08100824T ATE501520T1 AT E501520 T1 ATE501520 T1 AT E501520T1 AT 08100824 T AT08100824 T AT 08100824T AT 08100824 T AT08100824 T AT 08100824T AT E501520 T1 ATE501520 T1 AT E501520T1
Authority
AT
Austria
Prior art keywords
emitter
cold field
emmitters
coating
adsorption
Prior art date
Application number
AT08100824T
Other languages
English (en)
Inventor
Ii Tessner
Gregory Schwind
Lynwood Swanson
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE501520T1 publication Critical patent/ATE501520T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Bipolar Transistors (AREA)
  • Inorganic Insulating Materials (AREA)
AT08100824T 2007-01-24 2008-01-23 Kaltfeldemitter ATE501520T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US89736907P 2007-01-24 2007-01-24
US11/900,956 US7888654B2 (en) 2007-01-24 2007-09-14 Cold field emitter

Publications (1)

Publication Number Publication Date
ATE501520T1 true ATE501520T1 (de) 2011-03-15

Family

ID=39301320

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08100824T ATE501520T1 (de) 2007-01-24 2008-01-23 Kaltfeldemitter

Country Status (5)

Country Link
US (2) US7888654B2 (de)
EP (1) EP1950786B1 (de)
JP (1) JP5301168B2 (de)
AT (1) ATE501520T1 (de)
DE (1) DE602008005354D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888654B2 (en) * 2007-01-24 2011-02-15 Fei Company Cold field emitter
JP5203456B2 (ja) * 2008-06-20 2013-06-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及びその制御方法
DE102008049654B4 (de) 2008-09-30 2024-08-01 Carl Zeiss Microscopy Gmbh Elektronenstrahlquelle, Elektronenstrahlsystem mit derselben, Verfahren zur Herstellung der Elektronenstrahlquelle sowie deren Verwendung
WO2010144267A1 (en) * 2009-06-12 2010-12-16 Carl Zeiss Nts, Llc Method and system for heating a tip apex of a charged particle source
JP2011076753A (ja) * 2009-09-29 2011-04-14 Denki Kagaku Kogyo Kk 電子源及び電子機器
JP5455700B2 (ja) 2010-02-18 2014-03-26 株式会社日立ハイテクノロジーズ 電界放出電子銃及びその制御方法
JP5363413B2 (ja) * 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
WO2012017789A1 (ja) * 2010-08-06 2012-02-09 株式会社日立ハイテクノロジーズ ガス電解電離イオン源及びその使用方法、並びに、イオンビーム装置、並びに、エミッタチップ及びその製造方法
KR101027397B1 (ko) 2010-08-27 2011-04-11 손호섭 전기 및 전자 소자의 검사를 위한 초소형 전자칼럼용 텅스텐 ｃｆｅ의 제조 방법
US8736170B1 (en) 2011-02-22 2014-05-27 Fei Company Stable cold field emission electron source
US8536773B2 (en) * 2011-03-30 2013-09-17 Carl Zeiss Microscopy Gmbh Electron beam source and method of manufacturing the same
CN102629538B (zh) * 2012-04-13 2014-03-19 吴江炀晟阴极材料有限公司 具有低逸出功和高化学稳定性的电极材料
US10790403B1 (en) 2013-03-14 2020-09-29 nVizix LLC Microfabricated vacuum photodiode arrays for solar power
US10249471B2 (en) 2014-12-26 2019-04-02 Hitachi High-Technologies Corporation Composite charged particle beam apparatus and control method thereof
US9984846B2 (en) * 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment
CN109791862A (zh) * 2016-08-08 2019-05-21 Asml荷兰有限公司 电子发射器及其制造方法
US9847208B1 (en) * 2016-08-10 2017-12-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Electron beam device, cold field emitter, and method for regeneration of a cold field emitter
US10410827B2 (en) 2017-05-03 2019-09-10 Fei Company Gun lens design in a charged particle microscope
CN110709959B (zh) 2017-05-25 2022-05-13 新加坡国立大学 用于冷场电子发射的阴极结构及其制备方法
FR3074955B1 (fr) * 2017-12-07 2021-01-08 Thales Sa Source d'electrons a commande optique amelioree
CN109936906B (zh) * 2017-12-15 2024-03-08 中国科学院大连化学物理研究所 光阴极电子枪射频同步慢飘抑制装置
CN111048373B (zh) * 2018-10-12 2021-04-27 中国电子科技集团公司第三十八研究所 一种电子源再生方法
JP7161052B2 (ja) * 2019-07-02 2022-10-25 株式会社日立ハイテク 電子線装置
US11417492B2 (en) 2019-09-26 2022-08-16 Kla Corporation Light modulated electron source
EP3945539B1 (de) 2020-07-31 2023-06-07 Centre National de la Recherche Scientifique Gasionenkanone
US11823862B2 (en) 2021-12-29 2023-11-21 Nuflare Technology, Inc. Method and apparatus for usable beam current and brightness in Schottky thermal field emission (TFE)
US11651924B1 (en) 2022-06-22 2023-05-16 Fei Company Method of producing microrods for electron emitters, and associated microrods and electron emitters
US11848169B1 (en) * 2023-01-21 2023-12-19 Dazhi Chen Field-emission type electron source and charged particle beam device using the same

Family Cites Families (18)

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US3817592A (en) * 1972-09-29 1974-06-18 Linfield Res Inst Method for reproducibly fabricating and using stable thermal-field emission cathodes
GB1477458A (en) 1974-10-28 1977-06-22 Shah J Specimen stages for electron beam instruments
JPS5661733A (en) 1979-10-24 1981-05-27 Hitachi Ltd Field emission cathode and its manufacture
JPS5971232A (ja) * 1982-10-14 1984-04-21 Natl Inst For Res In Inorg Mater 表面酸化型炭化物フィールドエミッターの製造法
JPS61190830A (ja) * 1984-12-27 1986-08-25 Natl Inst For Res In Inorg Mater チタンオキシカーバイドエミッターの製造方法
DE3887891T2 (de) * 1988-11-01 1994-08-11 Ibm Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel.
US5449968A (en) * 1992-06-24 1995-09-12 Denki Kagaku Kogyo Kabushiki Kaisha Thermal field emission cathode
JPH08250054A (ja) * 1995-03-14 1996-09-27 Hitachi Ltd 拡散補給型電子線源およびそれを用いた電子線装置
US6680562B1 (en) * 1999-08-20 2004-01-20 Fei Company Schottky emitter having extended life
US6771013B2 (en) * 2000-10-17 2004-08-03 Fei Company Low power schottky emitter
JP2003100244A (ja) * 2001-09-26 2003-04-04 Jeol Ltd 電子ビーム源
US6798126B2 (en) * 2002-05-03 2004-09-28 Fei Company High angular intensity Schottky electron point source
EP1858047B1 (de) * 2005-01-14 2012-06-27 Denki Kagaku Kogyo Kabushiki Kaisha Herstellungsverfahren für eine elektronenquelle
CA2608548A1 (en) * 2005-06-17 2006-12-21 Sumitomo Electric Industries, Ltd. Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
EP1760761B1 (de) * 2005-09-05 2017-10-18 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Ladungsträgerstrahl-Emittiervorrichtung und Verfahren zum Betrieb einer Ladungsträgerstrahl-Emittiervorrichtung
EP1777730B1 (de) * 2005-10-19 2018-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Anordnung und Verfahren zum Kompensieren von Vibrationen von Emitterspitzen
US7544523B2 (en) * 2005-12-23 2009-06-09 Fei Company Method of fabricating nanodevices
US7888654B2 (en) * 2007-01-24 2011-02-15 Fei Company Cold field emitter

Also Published As

Publication number Publication date
DE602008005354D1 (de) 2011-04-21
JP5301168B2 (ja) 2013-09-25
US7888654B2 (en) 2011-02-15
US20080174225A1 (en) 2008-07-24
EP1950786A2 (de) 2008-07-30
EP1950786B1 (de) 2011-03-09
JP2008181876A (ja) 2008-08-07
EP1950786A3 (de) 2009-03-25
US8217565B2 (en) 2012-07-10
US20110101238A1 (en) 2011-05-05

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