ATE504105T1 - Laservorrichtung - Google Patents

Laservorrichtung

Info

Publication number
ATE504105T1
ATE504105T1 AT08828581T AT08828581T ATE504105T1 AT E504105 T1 ATE504105 T1 AT E504105T1 AT 08828581 T AT08828581 T AT 08828581T AT 08828581 T AT08828581 T AT 08828581T AT E504105 T1 ATE504105 T1 AT E504105T1
Authority
AT
Austria
Prior art keywords
cladding
stabilized
laser device
long wavelength
surface plasmon
Prior art date
Application number
AT08828581T
Other languages
English (en)
Inventor
Ryota Sekiguchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE504105T1 publication Critical patent/ATE504105T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Laser Surgery Devices (AREA)
  • Glass Compositions (AREA)
  • Lasers (AREA)
AT08828581T 2007-08-31 2008-08-27 Laservorrichtung ATE504105T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007226341A JP4871816B2 (ja) 2007-08-31 2007-08-31 レーザ素子
PCT/JP2008/065788 WO2009028715A1 (en) 2007-08-31 2008-08-27 Laser device

Publications (1)

Publication Number Publication Date
ATE504105T1 true ATE504105T1 (de) 2011-04-15

Family

ID=39971021

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08828581T ATE504105T1 (de) 2007-08-31 2008-08-27 Laservorrichtung

Country Status (7)

Country Link
US (2) US7881352B2 (de)
EP (1) EP2198491B1 (de)
JP (1) JP4871816B2 (de)
CN (1) CN101682162B (de)
AT (1) ATE504105T1 (de)
DE (1) DE602008005911D1 (de)
WO (1) WO2009028715A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5441470B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
JP5441469B2 (ja) * 2009-03-27 2014-03-12 キヤノン株式会社 共振器
CN101964500B (zh) * 2010-07-15 2012-01-11 中国科学院苏州纳米技术与纳米仿生研究所 一种单频太赫兹光源
KR20120087631A (ko) 2011-01-28 2012-08-07 삼성전자주식회사 나노 구조화된 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 홀로그래픽 디스플레이 장치
US8805147B2 (en) * 2011-05-17 2014-08-12 Canon Kabushiki Kaisha Waveguide, apparatus including the waveguide, and method of manufacturing the waveguide
DE102012219024B4 (de) * 2012-10-18 2015-04-09 Siemens Aktiengesellschaft Gehäuseverkleidungsmodul, Anordnung und Verfahren mit Kollisionserkennung für medizintechnische Geräte
JP6100024B2 (ja) * 2013-02-27 2017-03-22 キヤノン株式会社 発振素子
JP2016036128A (ja) * 2014-07-31 2016-03-17 キヤノン株式会社 発振素子
JP6921482B2 (ja) * 2015-05-22 2021-08-18 キヤノン株式会社 素子、これを有する発振器及び情報取得装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5426633A (en) 1992-06-02 1995-06-20 Nec Corporation System for processing synchronization signals with phase synchronization in a mobile communication network
US6301282B1 (en) * 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
US6501783B1 (en) 2000-02-24 2002-12-31 Lucent Technologies Inc. Distributed feedback surface plasmon laser
US6359520B1 (en) 2000-12-21 2002-03-19 Raytheon Company Optically powered resonant tunneling device
JP4857027B2 (ja) 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
JP4873746B2 (ja) 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
JP5127430B2 (ja) 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子

Also Published As

Publication number Publication date
US20100232457A1 (en) 2010-09-16
DE602008005911D1 (de) 2011-05-12
EP2198491B1 (de) 2011-03-30
US7881352B2 (en) 2011-02-01
EP2198491A1 (de) 2010-06-23
JP2009059922A (ja) 2009-03-19
CN101682162A (zh) 2010-03-24
JP4871816B2 (ja) 2012-02-08
WO2009028715A1 (en) 2009-03-05
US20110090926A1 (en) 2011-04-21
CN101682162B (zh) 2012-10-10
US7957443B2 (en) 2011-06-07

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Legal Events

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