ATE504106T1 - Halbleiterlaser mit interband-durchtunnelung und intersubband-übergang - Google Patents

Halbleiterlaser mit interband-durchtunnelung und intersubband-übergang

Info

Publication number
ATE504106T1
ATE504106T1 AT07122624T AT07122624T ATE504106T1 AT E504106 T1 ATE504106 T1 AT E504106T1 AT 07122624 T AT07122624 T AT 07122624T AT 07122624 T AT07122624 T AT 07122624T AT E504106 T1 ATE504106 T1 AT E504106T1
Authority
AT
Austria
Prior art keywords
interband
tunneling
transition
active region
intersubband
Prior art date
Application number
AT07122624T
Other languages
English (en)
Inventor
Gyungock Kim
In Gyoo Kim
Junghyung Pyo
Ki Seok Chang
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Application granted granted Critical
Publication of ATE504106T1 publication Critical patent/ATE504106T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
    • H01S5/3419—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT07122624T 2006-12-08 2007-12-07 Halbleiterlaser mit interband-durchtunnelung und intersubband-übergang ATE504106T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060125065A KR100842288B1 (ko) 2006-12-08 2006-12-08 인터밴드 터널링 부밴드 천이 반도체 레이저

Publications (1)

Publication Number Publication Date
ATE504106T1 true ATE504106T1 (de) 2011-04-15

Family

ID=39156620

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07122624T ATE504106T1 (de) 2006-12-08 2007-12-07 Halbleiterlaser mit interband-durchtunnelung und intersubband-übergang

Country Status (5)

Country Link
US (1) US7756176B2 (de)
EP (1) EP1931001B1 (de)
KR (1) KR100842288B1 (de)
AT (1) ATE504106T1 (de)
DE (1) DE602007013518D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8325774B2 (en) * 2010-08-12 2012-12-04 Wisconsin Alumni Research Foundation High power, high efficiency quantum cascade lasers with reduced electron leakage
WO2013106619A1 (en) * 2012-01-13 2013-07-18 Corning Incorporated Mid-ir multiwavelength concatenated distributed-feedback laser with an active core made of cascaded stages
US9209288B2 (en) * 2012-12-21 2015-12-08 Intel Corporation Reduced scale resonant tunneling field effect transistor
WO2016115302A1 (en) * 2015-01-16 2016-07-21 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Tunnel diode with broken-gap quantum well

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5570386A (en) 1994-04-04 1996-10-29 Lucent Technologies Inc. Semiconductor laser
US5457709A (en) 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5509025A (en) 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser
US5588015A (en) * 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures
US5727010A (en) 1996-03-20 1998-03-10 Lucent Technologies Inc. Article comprising an improved quantum cascade laser
US5799026A (en) * 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
US5745516A (en) 1996-11-06 1998-04-28 Lucent Technologies Inc. Article comprising a unipolar superlattice laser
US5936989A (en) 1997-04-29 1999-08-10 Lucent Technologies, Inc. Quantum cascade laser
GB9704987D0 (en) * 1997-03-11 1997-04-30 Isis Innovation Infrared radiation source
JP2001077466A (ja) 1999-09-03 2001-03-23 Rohm Co Ltd 半導体レーザ
JP3412007B2 (ja) * 1999-09-03 2003-06-03 東北大学長 サブバンド間発光素子
US6556604B1 (en) 2000-11-08 2003-04-29 Lucent Technologies Inc. Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters
JP2003046125A (ja) 2001-07-30 2003-02-14 Shin Etsu Handotai Co Ltd 発光素子
JP3857295B2 (ja) * 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子

Also Published As

Publication number Publication date
DE602007013518D1 (de) 2011-05-12
US7756176B2 (en) 2010-07-13
KR20080053094A (ko) 2008-06-12
US20080151956A1 (en) 2008-06-26
KR100842288B1 (ko) 2008-06-30
EP1931001A3 (de) 2010-03-10
EP1931001A2 (de) 2008-06-11
EP1931001B1 (de) 2011-03-30

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