ATE505434T1 - Herstellung eines hochreinen fluorgases und methode zur analyse von spuren in einem hochreinen fluorgas - Google Patents

Herstellung eines hochreinen fluorgases und methode zur analyse von spuren in einem hochreinen fluorgas

Info

Publication number
ATE505434T1
ATE505434T1 AT02738834T AT02738834T ATE505434T1 AT E505434 T1 ATE505434 T1 AT E505434T1 AT 02738834 T AT02738834 T AT 02738834T AT 02738834 T AT02738834 T AT 02738834T AT E505434 T1 ATE505434 T1 AT E505434T1
Authority
AT
Austria
Prior art keywords
fluorine gas
purity fluorine
compound
heating
production
Prior art date
Application number
AT02738834T
Other languages
English (en)
Inventor
Junichi Torisu
Hitoshi Atobe
Yasuyuki Hoshino
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001199731A external-priority patent/JP4744017B2/ja
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE505434T1 publication Critical patent/ATE505434T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00Halogens; Halogen acids
    • C01B7/19Fluorine; Hydrogen fluoride
    • C01B7/20Fluorine
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03Cuvette constructions
    • G01N21/0303Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N21/03Cuvette constructions
    • G01N21/09Cuvette constructions adapted to resist hostile environments or corrosive or abrasive materials
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02Column chromatography
    • G01N30/04Preparation or injection of sample to be analysed
    • G01N30/06Preparation
    • G01N30/14Preparation by elimination of some components
    • G01N2030/143Preparation by elimination of some components selective absorption
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • H01S3/036Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00Chemistry: analytical and immunological testing
    • Y10T436/19Halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
AT02738834T 2001-06-29 2002-06-27 Herstellung eines hochreinen fluorgases und methode zur analyse von spuren in einem hochreinen fluorgas ATE505434T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001199437 2001-06-29
JP2001199731A JP4744017B2 (ja) 2001-06-29 2001-06-29 高純度フッ素ガス中の微量不純物の分析方法
PCT/JP2002/006519 WO2003002454A2 (en) 2001-06-29 2002-06-27 High-purity fluorine gas, production and use thereof, and method for analyzing trace impurities in high-purity fluorine gas

Publications (1)

Publication Number Publication Date
ATE505434T1 true ATE505434T1 (de) 2011-04-15

Family

ID=29738262

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02738834T ATE505434T1 (de) 2001-06-29 2002-06-27 Herstellung eines hochreinen fluorgases und methode zur analyse von spuren in einem hochreinen fluorgas

Country Status (8)

Country Link
US (1) US6955801B2 (de)
EP (1) EP1399382B1 (de)
KR (2) KR100633870B1 (de)
CN (1) CN1639058A (de)
AT (1) ATE505434T1 (de)
DE (1) DE60239740D1 (de)
TW (1) TW546254B (de)
WO (1) WO2003002454A2 (de)

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US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20090001524A1 (en) * 2001-11-26 2009-01-01 Siegele Stephen H Generation and distribution of a fluorine gas
US20040037768A1 (en) * 2001-11-26 2004-02-26 Robert Jackson Method and system for on-site generation and distribution of a process gas
AU2002349510A1 (en) * 2001-12-17 2003-06-30 Toyo Tanso Co., Ltd. Apparatus for generating f2 gas and method for generating f2 gas, and f2 gas
US7638006B2 (en) * 2004-08-23 2009-12-29 Lockheed Martin Corporation Method of generating fluorine gas using coruscative reaction
US7498171B2 (en) * 2002-04-12 2009-03-03 Anthrogenesis Corporation Modulation of stem and progenitor cell differentiation, assays, and uses thereof
JP4440546B2 (ja) * 2003-01-10 2010-03-24 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ガス供給ライン構造
EP1807354B1 (de) * 2004-09-10 2008-11-12 Showa Denko Kabushiki Kaisha Verfahren zur herstellung von manganfluorid
JP4828185B2 (ja) * 2004-09-24 2011-11-30 昭和電工株式会社 フッ素ガスの製造方法
US7163036B2 (en) * 2004-12-22 2007-01-16 The Boc Group Plc Method of supplying fluorine
JP4642602B2 (ja) * 2005-08-24 2011-03-02 昭和電工株式会社 フッ素ガス中の含有ガス成分の定量分析方法およびこれに用いる装置
KR100836188B1 (ko) * 2006-09-28 2008-06-09 포항공과대학교 산학협력단 가스 크로마토그래프 자동 제어 장치와 데이터 통합 분석프로그램 및 데이터 통합 분석 방법
US8323364B2 (en) * 2007-07-31 2012-12-04 Purdue Research Foundation Control system for an on-demand gas generator
EP2488448A1 (de) * 2009-10-16 2012-08-22 Solvay Fluor und Derivate GmbH Hochreines fluorgas, seine herstellung und verwendung sowie verfahren zur überwachung der verunreinigungen in einem fluorgas
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101799458B (zh) * 2010-03-25 2013-06-19 广东电网公司电力科学研究院 一种分析电气设备中的sf6的分解产物的方法
CN102821825B (zh) * 2010-04-08 2015-12-02 索尔维公司 使用纯化过的氟制造电子器件的方法
TWI586842B (zh) * 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
JP5370319B2 (ja) * 2010-09-16 2013-12-18 株式会社島津製作所 赤外線吸収式ガス分析計
CN105510503A (zh) * 2015-12-31 2016-04-20 上海正帆科技股份有限公司 一种电子级氯气的分析装置和方法
CN105784863A (zh) * 2016-03-09 2016-07-20 广东华特气体股份有限公司 一种有毒有害气体的分析系统及使用方法
CN107337180B (zh) * 2017-07-10 2019-08-23 洛阳森蓝化工材料科技有限公司 一种纯化氟气的填料及其制备方法和应用
CN109187519B (zh) * 2018-08-14 2021-02-19 天津天赐高新材料有限公司 一种氟化氢气体定量分析装置及分析方法
CN113767281B (zh) * 2019-11-27 2025-01-17 株式会社力森诺科 由质谱仪测定含卤素氟化物气体中的氟气浓度的测定方法
CN111943142A (zh) * 2020-08-10 2020-11-17 福建瓮福蓝天氟化工有限公司 一种高纯度无水氟化氢纯化工艺
WO2022055654A1 (en) * 2020-09-10 2022-03-17 Cymer, Llc Apparatus for and method of fluorine measurement
KR102924126B1 (ko) * 2020-10-15 2026-02-06 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
JPWO2022080275A1 (de) * 2020-10-15 2022-04-21
CN112485348B (zh) * 2020-11-05 2023-08-08 北京高麦克仪器科技有限公司 Nf3中杂质分离分析方法
CN112540140B (zh) * 2020-12-16 2022-12-27 中船(邯郸)派瑞特种气体股份有限公司 一种气相色谱法测定hf中痕量杂质的设备及方法
CN112858553B (zh) * 2020-12-30 2024-02-09 四川红华实业有限公司 一种腐蚀性气体分析色谱仪及分析方法
CN112946125B (zh) * 2021-02-02 2021-11-16 福建德尔科技有限公司 氟气中氟化氢的分析装置及分析方法
CN115650174B (zh) * 2022-11-01 2023-08-25 福建德尔科技股份有限公司 高纯氟气的纯化装置
CN115598266A (zh) * 2022-12-12 2023-01-13 山东非金属材料研究所(Cn) 一种惰性气体分析方法

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US3989808A (en) * 1975-07-28 1976-11-02 The United States Of America As Represented By The United States Energy Research And Development Administration Method of preparing pure fluorine gas
US4292287A (en) * 1980-04-24 1981-09-29 The United States Of America As Represented By The United States Department Of Energy Method for directly recovering fluorine from gas streams
US4711680A (en) * 1983-05-23 1987-12-08 Rockwell International Corporation Pure fluorine gas generator
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DE19618119C2 (de) * 1995-05-12 2003-02-13 Lambda Physik Ag Verfahren zum Regeln der Energie von Strahlungspulsen eines Excimerlasers
US6280597B1 (en) * 1997-09-12 2001-08-28 Showa Denko K.K. Fluorinated metal having a fluorinated layer and process for its production
JP3094000B2 (ja) 1997-09-12 2000-10-03 昭和電工株式会社 フッ化表面層を有する金属材料もしくは金属皮膜ならびにフッ化方法
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Also Published As

Publication number Publication date
KR20040014989A (ko) 2004-02-18
EP1399382B1 (de) 2011-04-13
EP1399382A2 (de) 2004-03-24
DE60239740D1 (de) 2011-05-26
KR20050040947A (ko) 2005-05-03
CN1639058A (zh) 2005-07-13
US6955801B2 (en) 2005-10-18
KR100633870B1 (ko) 2006-10-13
KR100633872B1 (ko) 2006-10-16
US20040028600A1 (en) 2004-02-12
WO2003002454A3 (en) 2003-05-30
WO2003002454A2 (en) 2003-01-09
TW546254B (en) 2003-08-11

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