ATE505815T1 - Übergitterstruktur zur photodetektion mit gekoppelten quantenpunkten - Google Patents

Übergitterstruktur zur photodetektion mit gekoppelten quantenpunkten

Info

Publication number
ATE505815T1
ATE505815T1 AT07112455T AT07112455T ATE505815T1 AT E505815 T1 ATE505815 T1 AT E505815T1 AT 07112455 T AT07112455 T AT 07112455T AT 07112455 T AT07112455 T AT 07112455T AT E505815 T1 ATE505815 T1 AT E505815T1
Authority
AT
Austria
Prior art keywords
quantum dots
photodetection
superlattice
columns
substrate
Prior art date
Application number
AT07112455T
Other languages
English (en)
Inventor
Linda Hoeglund
Jan Andersson
Henk Martijn
Original Assignee
Acreo Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acreo Ab filed Critical Acreo Ab
Application granted granted Critical
Publication of ATE505815T1 publication Critical patent/ATE505815T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
AT07112455T 2007-07-13 2007-07-13 Übergitterstruktur zur photodetektion mit gekoppelten quantenpunkten ATE505815T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07112455A EP2015366B1 (de) 2007-07-13 2007-07-13 Übergitterstruktur zur Photodetektion mit gekoppelten Quantenpunkten

Publications (1)

Publication Number Publication Date
ATE505815T1 true ATE505815T1 (de) 2011-04-15

Family

ID=38649949

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07112455T ATE505815T1 (de) 2007-07-13 2007-07-13 Übergitterstruktur zur photodetektion mit gekoppelten quantenpunkten

Country Status (3)

Country Link
EP (1) EP2015366B1 (de)
AT (1) ATE505815T1 (de)
DE (1) DE602007013887D1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6368594B2 (ja) * 2014-09-09 2018-08-01 シャープ株式会社 光電変換素子
CN112335059B (zh) * 2018-07-11 2022-06-17 斯坦福国际研究院 无过量噪声的线性模式雪崩光电二极管

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480591B (en) 2001-01-15 2002-03-21 Nat Science Council Manufacture method of quantum dot infrared sensor

Also Published As

Publication number Publication date
EP2015366B1 (de) 2011-04-13
EP2015366A1 (de) 2009-01-14
DE602007013887D1 (de) 2011-05-26

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