ATE507485T1 - Einrichtung auf der basis eines magnetoresistiven mischsensors ohne niederfrequenzrauschen und diesbezügliches verfahren - Google Patents

Einrichtung auf der basis eines magnetoresistiven mischsensors ohne niederfrequenzrauschen und diesbezügliches verfahren

Info

Publication number
ATE507485T1
ATE507485T1 AT07874008T AT07874008T ATE507485T1 AT E507485 T1 ATE507485 T1 AT E507485T1 AT 07874008 T AT07874008 T AT 07874008T AT 07874008 T AT07874008 T AT 07874008T AT E507485 T1 ATE507485 T1 AT E507485T1
Authority
AT
Austria
Prior art keywords
magnetoresistive
low frequency
device based
frequency noise
related method
Prior art date
Application number
AT07874008T
Other languages
English (en)
Inventor
Myriam Pannetier-Lecoeur
Hedwige Polovy
Claude Fermon
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE507485T1 publication Critical patent/ATE507485T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Electronic Switches (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
AT07874008T 2007-06-27 2007-06-27 Einrichtung auf der basis eines magnetoresistiven mischsensors ohne niederfrequenzrauschen und diesbezügliches verfahren ATE507485T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2007/003323 WO2009001162A2 (en) 2007-06-27 2007-06-27 Device based on a magneto-resistive mixed sensor without low frequency noise and associated method

Publications (1)

Publication Number Publication Date
ATE507485T1 true ATE507485T1 (de) 2011-05-15

Family

ID=40186090

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07874008T ATE507485T1 (de) 2007-06-27 2007-06-27 Einrichtung auf der basis eines magnetoresistiven mischsensors ohne niederfrequenzrauschen und diesbezügliches verfahren

Country Status (6)

Country Link
US (1) US8405390B2 (de)
EP (1) EP2165210B1 (de)
JP (1) JP2010531450A (de)
AT (1) ATE507485T1 (de)
DE (1) DE602007014265D1 (de)
WO (1) WO2009001162A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
RU2564383C1 (ru) * 2014-04-23 2015-09-27 федеральное государственное бюджетное учреждение "Научно-производственный комплекс "Технологический центр" МИЭТ Датчик переменного магнитного поля
US9812637B2 (en) 2015-06-05 2017-11-07 Allegro Microsystems, Llc Spin valve magnetoresistance element with improved response to magnetic fields
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
FR3067125B1 (fr) 2017-06-02 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Systeme et procede de suppression du bruit basse frequence de capteurs magneto-resistifs
FR3067116B1 (fr) 2017-06-02 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Systeme et procede de suppression du bruit basse frequence de capteurs magneto-resistifs a magnetoresistence tunnel
US10615887B1 (en) * 2018-09-24 2020-04-07 Seagate Technology Llc Mitigation of noise generated by random excitation of asymmetric oscillation modes
US12022749B2 (en) 2020-03-04 2024-06-25 International Business Machines Corporation Flux bias line local heating device
US11937516B2 (en) 2020-03-04 2024-03-19 International Business Machines Corporation Fabrication of a flux bias line local heating device
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227721A (en) 1987-12-25 1993-07-13 Sharp Kabushiki Kaisha Superconductive magnetic sensor having self induced magnetic biasing
JP2856463B2 (ja) 1989-12-15 1999-02-10 富士通株式会社 超伝導回路内磁束トラップ解除装置
US5173620A (en) 1989-12-15 1992-12-22 Fujitsu Limited Device for eliminating trap of magnetic flux in a superconduction circuit
JP3185883B2 (ja) 1998-12-25 2001-07-11 日本電気株式会社 安定発振検出回路、クロック信号発振器、安定発振検出方法
WO2004068158A1 (en) 2003-01-31 2004-08-12 Commissariat Energie Atomique Device for sensing a magnetic field
WO2004068152A1 (en) 2003-01-31 2004-08-12 Commissariat Energie Atomique Device for sensing rf field
WO2007095971A1 (en) 2006-02-24 2007-08-30 Commissariat A L'energie Atomique Method and device for non destructive evaluation of defects in a metallic object

Also Published As

Publication number Publication date
US8405390B2 (en) 2013-03-26
WO2009001162A3 (en) 2009-03-26
DE602007014265D1 (de) 2011-06-09
US20100164490A1 (en) 2010-07-01
WO2009001162A2 (en) 2008-12-31
EP2165210B1 (de) 2011-04-27
JP2010531450A (ja) 2010-09-24
EP2165210A2 (de) 2010-03-24

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