ATE507578T1 - Vorrichtung zur chemischen behandlung dünner schichten von halbleitern - Google Patents

Vorrichtung zur chemischen behandlung dünner schichten von halbleitern

Info

Publication number
ATE507578T1
ATE507578T1 AT04754948T AT04754948T ATE507578T1 AT E507578 T1 ATE507578 T1 AT E507578T1 AT 04754948 T AT04754948 T AT 04754948T AT 04754948 T AT04754948 T AT 04754948T AT E507578 T1 ATE507578 T1 AT E507578T1
Authority
AT
Austria
Prior art keywords
chamber
processing
wafer
semiconductors
chemical treatment
Prior art date
Application number
AT04754948T
Other languages
English (en)
Inventor
Sophia Wen
Original Assignee
Sophia Wen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sophia Wen filed Critical Sophia Wen
Application granted granted Critical
Publication of ATE507578T1 publication Critical patent/ATE507578T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Weting (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT04754948T 2003-06-13 2004-06-10 Vorrichtung zur chemischen behandlung dünner schichten von halbleitern ATE507578T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47838403P 2003-06-13 2003-06-13
PCT/US2004/018516 WO2004114375A1 (en) 2003-06-13 2004-06-10 Method and apparatus for thin-layer chemical processing of semiconductor wafers

Publications (1)

Publication Number Publication Date
ATE507578T1 true ATE507578T1 (de) 2011-05-15

Family

ID=33539087

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04754948T ATE507578T1 (de) 2003-06-13 2004-06-10 Vorrichtung zur chemischen behandlung dünner schichten von halbleitern

Country Status (8)

Country Link
US (2) US7938906B2 (de)
EP (1) EP1639629B1 (de)
JP (1) JP2007502550A (de)
CN (1) CN100433243C (de)
AT (1) ATE507578T1 (de)
DE (1) DE602004032435D1 (de)
TW (1) TWI382447B (de)
WO (1) WO2004114375A1 (de)

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US8076244B2 (en) * 2006-02-10 2011-12-13 Micron Technology, Inc. Methods for causing fluid to flow through or into via holes, vents and other openings or recesses that communicate with surfaces of substrates of semiconductor device components
JP4751460B2 (ja) * 2009-02-18 2011-08-17 東京エレクトロン株式会社 基板搬送装置及び基板処理システム
EP2693461B1 (de) * 2011-04-15 2015-11-25 Wuxi Huaying Microelectronics Technology Co., Ltd. Halbleiterverarbeitungsvorrichtung
CN102738033B (zh) * 2011-04-15 2014-11-26 无锡华瑛微电子技术有限公司 包含改进立柱结构的半导体处理装置
CN102738032B (zh) * 2011-04-15 2014-12-31 无锡华瑛微电子技术有限公司 可校正工作面平整性的半导体处理装置
CN102738034B (zh) * 2011-04-15 2014-12-31 无锡华瑛微电子技术有限公司 包含处理流体泄漏回收结构的半导体处理装置
CN102737955B (zh) * 2011-04-15 2015-04-15 无锡华瑛微电子技术有限公司 一种半导体处理装置
CN102738031B (zh) * 2011-04-15 2015-02-04 无锡华瑛微电子技术有限公司 包含可抽拉腔室的半导体处理装置
CN102903605B (zh) * 2011-07-29 2015-03-18 无锡华瑛微电子技术有限公司 半导体处理装置及控制方法
CN103094152B (zh) * 2011-11-01 2015-02-04 无锡华瑛微电子技术有限公司 半导体处理装置及处理流体收集方法
CN102903604B (zh) * 2011-07-29 2015-03-18 无锡华瑛微电子技术有限公司 掀开式半导体处理装置
CN102903606B (zh) * 2011-07-29 2016-03-30 无锡华瑛微电子技术有限公司 多腔室半导体处理装置
WO2013016941A1 (zh) * 2011-07-29 2013-02-07 无锡华瑛微电子技术有限公司 可调式半导体处理装置及其控制方法
CN103187240B (zh) * 2011-12-30 2016-06-01 无锡华瑛微电子技术有限公司 半导体处理设备
CN103187338B (zh) * 2011-12-30 2015-08-19 无锡华瑛微电子技术有限公司 模块化半导体处理设备
US9679751B2 (en) 2012-03-15 2017-06-13 Lam Research Corporation Chamber filler kit for plasma etch chamber useful for fast gas switching
CN103367197B (zh) * 2012-03-29 2015-12-02 无锡华瑛微电子技术有限公司 晶圆表面处理系统
CN103454334B (zh) * 2012-05-29 2015-09-09 无锡华瑛微电子技术有限公司 晶圆表面的超微量阴阳离子检测系统
TWI489532B (zh) * 2012-06-14 2015-06-21 Wuxi Huaying Microelectronics Technology Co Ltd 半導體處理裝置
US20150041062A1 (en) * 2013-08-12 2015-02-12 Lam Research Corporation Plasma processing chamber with removable body
US9368378B2 (en) * 2013-12-31 2016-06-14 Sophia Wen Semiconductor wafer cleaning system
CN104485301B (zh) * 2014-12-19 2017-02-22 无锡华瑛微电子技术有限公司 包含防腐蚀立柱结构的半导体晶圆化学处理装置
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
US11333074B2 (en) * 2016-07-29 2022-05-17 Aerojet Rocketdyne, Inc. Liquid propellant rocket engine turbopump drain
WO2020048306A1 (zh) * 2018-09-07 2020-03-12 无锡华瑛微电子技术有限公司 半导体处理装置
US11684594B2 (en) 2020-05-12 2023-06-27 President And Fellows Of Harvard College Antifungal prophylaxis for cornea
WO2022057790A1 (zh) * 2020-09-15 2022-03-24 无锡华瑛微电子技术有限公司 半导体边缘处理装置和方法
US11938521B2 (en) * 2021-11-17 2024-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for semiconductor wafer cleaning
CN116206967B (zh) * 2021-12-01 2026-04-14 格科半导体(上海)有限公司 提高晶圆切割性能的方法及晶圆结构
US12103052B2 (en) 2022-06-14 2024-10-01 Tokyo Electron Limited Method and single wafer processing system for processing of semiconductor wafers

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US5169408A (en) * 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
JPH09502030A (ja) * 1993-06-29 1997-02-25 イマックス コーポレーション 光学表面の洗浄方法および装置
US6239038B1 (en) * 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6027602A (en) 1997-08-29 2000-02-22 Techpoint Pacific Singapore Pte. Ltd. Wet processing apparatus
JP2000133693A (ja) * 1998-08-19 2000-05-12 Shibaura Mechatronics Corp 真空装置用駆動機構および真空装置
JP4086216B2 (ja) * 1999-03-02 2008-05-14 株式会社エフテック パイプ材のハイドロフォーミング方法
US20030213772A9 (en) * 1999-07-09 2003-11-20 Mok Yeuk-Fai Edwin Integrated semiconductor substrate bevel cleaning apparatus and method
US6176934B1 (en) * 1999-09-16 2001-01-23 Semitool, Inc. Inflatable door seal
JP2001255540A (ja) * 2000-03-09 2001-09-21 Miyota Kk 液晶表示パネルの製造方法及びその装置
JP2003536270A (ja) * 2000-06-16 2003-12-02 アプライド マテリアルズ インコーポレイテッド 単一基板ウェット−ドライ一体型クラスター洗浄機
CN1446127A (zh) * 2000-08-04 2003-10-01 S·C·流体公司 带防护罩机构的倒置压力容器
KR100877044B1 (ko) * 2000-10-02 2008-12-31 도쿄엘렉트론가부시키가이샤 세정처리장치
JP3453366B2 (ja) * 2001-01-25 2003-10-06 株式会社半導体先端テクノロジーズ 基板の洗浄装置および洗浄方法
JP2002270568A (ja) * 2001-03-12 2002-09-20 Mimasu Semiconductor Industry Co Ltd 半導体ウエーハの製造方法および金属モニタリング装置
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JP2003215002A (ja) * 2002-01-17 2003-07-30 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP3852758B2 (ja) * 2002-03-01 2006-12-06 インターナショナル・ビジネス・マシーンズ・コーポレーション スラリー回収装置及びその方法

Also Published As

Publication number Publication date
US7938906B2 (en) 2011-05-10
JP2007502550A (ja) 2007-02-08
CN100433243C (zh) 2008-11-12
WO2004114375A1 (en) 2004-12-29
EP1639629A1 (de) 2006-03-29
EP1639629B1 (de) 2011-04-27
US20120115255A1 (en) 2012-05-10
TW200507028A (en) 2005-02-16
US20040253747A1 (en) 2004-12-16
CN1806312A (zh) 2006-07-19
DE602004032435D1 (de) 2011-06-09
TWI382447B (zh) 2013-01-11

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