ATE507579T1 - Verfahren zur atomschichtabscheidung - Google Patents

Verfahren zur atomschichtabscheidung

Info

Publication number
ATE507579T1
ATE507579T1 AT03783399T AT03783399T ATE507579T1 AT E507579 T1 ATE507579 T1 AT E507579T1 AT 03783399 T AT03783399 T AT 03783399T AT 03783399 T AT03783399 T AT 03783399T AT E507579 T1 ATE507579 T1 AT E507579T1
Authority
AT
Austria
Prior art keywords
monolayer
substrate
precursor
composition
layer deposition
Prior art date
Application number
AT03783399T
Other languages
English (en)
Inventor
Trung Doan
Guy Blalock
Gurtej Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE507579T1 publication Critical patent/ATE507579T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/38—Borides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT03783399T 2002-11-12 2003-11-12 Verfahren zur atomschichtabscheidung ATE507579T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/293,072 US7022605B2 (en) 2002-11-12 2002-11-12 Atomic layer deposition methods
PCT/US2003/036223 WO2004044963A2 (en) 2002-11-12 2003-11-12 Atomic layer deposition methods

Publications (1)

Publication Number Publication Date
ATE507579T1 true ATE507579T1 (de) 2011-05-15

Family

ID=32229589

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03783399T ATE507579T1 (de) 2002-11-12 2003-11-12 Verfahren zur atomschichtabscheidung

Country Status (10)

Country Link
US (4) US7022605B2 (de)
EP (1) EP1561239B1 (de)
JP (1) JP2006505696A (de)
KR (3) KR100733181B1 (de)
CN (1) CN100483636C (de)
AT (1) ATE507579T1 (de)
AU (1) AU2003290815A1 (de)
DE (1) DE60336920D1 (de)
TW (1) TWI257438B (de)
WO (1) WO2004044963A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7097782B2 (en) * 2002-11-12 2006-08-29 Micron Technology, Inc. Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
US7022605B2 (en) * 2002-11-12 2006-04-04 Micron Technology, Inc. Atomic layer deposition methods
ATE546824T1 (de) * 2004-06-08 2012-03-15 Dichroic Cell S R L System zur plasmaunterstützten chemischen aufdampfung bei niedrigen energien
KR100589062B1 (ko) * 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US20050276922A1 (en) * 2004-06-10 2005-12-15 Henry Bernhardt Method of forming thin dielectric layers
JP4515191B2 (ja) * 2004-08-03 2010-07-28 東京エレクトロン株式会社 成膜方法
KR100653705B1 (ko) * 2004-10-13 2006-12-04 삼성전자주식회사 원자층증착법을 이용한 박막 형성방법
KR100714269B1 (ko) * 2004-10-14 2007-05-02 삼성전자주식회사 반도체 소자 제조에 사용되는 금속층 형성방법
US7435454B2 (en) * 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060210723A1 (en) * 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7314835B2 (en) * 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7338901B2 (en) * 2005-08-19 2008-03-04 Tokyo Electron Limited Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition
US7959985B2 (en) * 2006-03-20 2011-06-14 Tokyo Electron Limited Method of integrating PEALD Ta-containing films into Cu metallization
US7981815B2 (en) * 2006-07-20 2011-07-19 Hitachi Kokusai Electric Inc. Semiconductor device producing method and substrate processing apparatus
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US20090203197A1 (en) * 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
KR20110022036A (ko) * 2008-06-02 2011-03-04 맷슨 테크놀로지, 인크. 기판 처리방법
US20120263887A1 (en) * 2011-04-13 2012-10-18 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for ion-assisted atomic layer deposition
TW201306082A (zh) * 2011-04-18 2013-02-01 東京威力科創股份有限公司 電漿評估方法、電漿處理方法及電漿處理裝置
CN102344134B (zh) * 2011-09-23 2013-03-06 中国科学院微电子研究所 一种石墨的制备方法
US9194045B2 (en) 2012-04-03 2015-11-24 Novellus Systems, Inc. Continuous plasma and RF bias to regulate damage in a substrate processing system
JP2015012179A (ja) * 2013-06-28 2015-01-19 住友電気工業株式会社 気相成長方法
US9145607B2 (en) * 2013-10-22 2015-09-29 Lam Research Corporation Tandem source activation for cyclical deposition of films
WO2015180077A1 (zh) * 2014-05-28 2015-12-03 王东君 一种辅助增强原子层沉积方法
KR101736840B1 (ko) * 2015-10-12 2017-05-17 세메스 주식회사 안테나 및 이를 포함하는 기판 처리 장치
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US52323A (en) * 1866-01-30 File-clasp for documents
US119673A (en) * 1871-10-03 Improvement in combined latches and locks
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
JPH05343334A (ja) 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP3571129B2 (ja) * 1995-11-10 2004-09-29 株式会社半導体エネルギー研究所 プラズマｃｖｄ法および薄膜トランジスタの作製方法
KR970071945A (ko) * 1996-02-20 1997-11-07 가나이 쯔도무 플라즈마처리방법 및 장치
US5874706A (en) * 1996-09-26 1999-02-23 Tokyo Electron Limited Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field
US5976623A (en) * 1996-12-03 1999-11-02 Lucent Technologies Inc. Process for making composite films
KR100385946B1 (ko) * 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US6861356B2 (en) * 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US20010052323A1 (en) 1999-02-17 2001-12-20 Ellie Yieh Method and apparatus for forming material layers from atomic gasses
JP3430959B2 (ja) * 1999-03-04 2003-07-28 東京エレクトロン株式会社 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6486924B1 (en) * 2000-02-03 2002-11-26 Terk Technologies Corp. Television antenna with bypassable amplifier circuit
JP3477573B2 (ja) 2000-03-24 2003-12-10 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成導入部材及びスロット電極
US6369763B1 (en) 2000-04-05 2002-04-09 Asi Technology Corporation Reconfigurable plasma antenna
HUP0300413A2 (hu) * 2000-04-10 2003-06-28 Pfizer Products Inc. Amidcsoportot viselő benzolgyűrűs csoporttal helyettesített piperidint tartalmazó és rokonszerkezetű vegyületek, eljárás az előállításukra és ezeket tartalmazó gyógyszerkészítmények
US6409451B1 (en) 2000-04-13 2002-06-25 Ibp, Inc. Item handler and method for flow through storage
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6847003B2 (en) * 2000-10-13 2005-01-25 Tokyo Electron Limited Plasma processing apparatus
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
KR100385947B1 (ko) * 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6416822B1 (en) * 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
WO2002045871A1 (en) 2000-12-06 2002-06-13 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
KR100390831B1 (ko) 2000-12-18 2003-07-10 주식회사 하이닉스반도체 플라즈마 원자층 증착법에 의한 탄탈륨옥사이드 유전막형성 방법
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7250083B2 (en) * 2002-03-08 2007-07-31 Sundew Technologies, Llc ALD method and apparatus
US6845734B2 (en) 2002-04-11 2005-01-25 Micron Technology, Inc. Deposition apparatuses configured for utilizing phased microwave radiation
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7022605B2 (en) * 2002-11-12 2006-04-04 Micron Technology, Inc. Atomic layer deposition methods
US7097782B2 (en) * 2002-11-12 2006-08-29 Micron Technology, Inc. Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly

Also Published As

Publication number Publication date
US20060029738A1 (en) 2006-02-09
US7402518B2 (en) 2008-07-22
WO2004044963A2 (en) 2004-05-27
KR20060110378A (ko) 2006-10-24
KR100704086B1 (ko) 2007-04-06
CN100483636C (zh) 2009-04-29
JP2006505696A (ja) 2006-02-16
KR100719644B1 (ko) 2007-05-18
WO2004044963A3 (en) 2004-11-25
US20060172534A1 (en) 2006-08-03
AU2003290815A1 (en) 2004-06-03
US7115529B2 (en) 2006-10-03
KR20060105006A (ko) 2006-10-09
WO2004044963B1 (en) 2004-12-23
US20040092132A1 (en) 2004-05-13
EP1561239B1 (de) 2011-04-27
KR100733181B1 (ko) 2007-06-28
DE60336920D1 (de) 2011-06-09
US7022605B2 (en) 2006-04-04
TW200424350A (en) 2004-11-16
AU2003290815A8 (en) 2004-06-03
US7576012B2 (en) 2009-08-18
KR20050074581A (ko) 2005-07-18
TWI257438B (en) 2006-07-01
CN1739188A (zh) 2006-02-22
EP1561239A2 (de) 2005-08-10
US20050260854A1 (en) 2005-11-24

Similar Documents

Publication Publication Date Title
DE60336920D1 (de) Verfahren zur atomschichtabscheidung
ATE519870T1 (de) Verfahren zur abscheidung von metallschichten aus metallcarbonylvorläufern
WO2004001809A8 (en) Method for energy-assisted atomic layer deposition and removal
WO2008129508A3 (en) Deposition of transition metal carbide containing films
TW200506093A (en) System and method for forming multi-component films
DE60227350D1 (de) Verbessertes abscheidungsverfahren von halbleiterschichten
SG143230A1 (en) Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
MY139973A (en) Coated substrate with a curved surface, and a method for production of a coated substrate such as this
WO2004075248A3 (fr) Procede de revetement d'une surface, fabrication d'interconnexions en microelectronique utilisant ce procede, et circuits integres
TW200730661A (en) Method and system for performing plasma enhanced atomic layer deposition
DE60314640D1 (de) Methoden zur abscheidung von atomschichten
TW200606277A (en) System and method for forming multi-component dielectric films
ATE491227T1 (de) Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten
ATE511555T1 (de) Atomlagenabscheidungsverfahren zur bildung von siliciumdioxid enthaltenden schichten
WO2007048963A3 (fr) Procede de traitement d'un substrat
ATE460509T1 (de) Verfahren und vorrichtung zur beschichtung oder modifizierung von oberflächen
TW200626743A (en) Process of using microwave deposition of metal oxide onto an organic substrate
WO2002045147A3 (en) Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
FR2865508B1 (fr) Microsysteme pyrotechnique et procede de fabrication d'un microsysteme.
ATE355397T1 (de) Verfahren zur modifizierung einer metalloberfläche
WO2007046841A3 (en) Ceramic components, coated structures and methods for making same
WO2007003639A3 (fr) Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche
DE50101868D1 (de) Kompositstruktur für elektronische mikrosysteme sowie verfahren zur herstellung der kompositstruktur
TW200504866A (en) Semiconductor etch speed modification
DE60204025D1 (de) Verfahren zur herstellung von diamantbeschichteten verbundwerkstoffen

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties