ATE510302T1 - Vorrichtung mit einer halbleiteranordnung und auswerteschaltungen, und entsprechende verfahren - Google Patents
Vorrichtung mit einer halbleiteranordnung und auswerteschaltungen, und entsprechende verfahrenInfo
- Publication number
- ATE510302T1 ATE510302T1 AT03725509T AT03725509T ATE510302T1 AT E510302 T1 ATE510302 T1 AT E510302T1 AT 03725509 T AT03725509 T AT 03725509T AT 03725509 T AT03725509 T AT 03725509T AT E510302 T1 ATE510302 T1 AT E510302T1
- Authority
- AT
- Austria
- Prior art keywords
- voltage
- corresponding method
- semiconductor device
- determining
- semiconductor arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000011156 evaluation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/659—Lateral DMOS [LDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
Landscapes
- Thin Film Transistor (AREA)
- Measurement Of Current Or Voltage (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/152,235 US6717214B2 (en) | 2002-05-21 | 2002-05-21 | SOI-LDMOS device with integral voltage sense electrodes |
| PCT/IB2003/002142 WO2003098690A2 (en) | 2002-05-21 | 2003-05-20 | Soi-ldmos devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE510302T1 true ATE510302T1 (de) | 2011-06-15 |
Family
ID=29548459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03725509T ATE510302T1 (de) | 2002-05-21 | 2003-05-20 | Vorrichtung mit einer halbleiteranordnung und auswerteschaltungen, und entsprechende verfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6717214B2 (de) |
| EP (1) | EP1509955B1 (de) |
| JP (1) | JP2005526400A (de) |
| KR (1) | KR20040111631A (de) |
| CN (1) | CN100505305C (de) |
| AT (1) | ATE510302T1 (de) |
| AU (1) | AU2003228040A1 (de) |
| WO (1) | WO2003098690A2 (de) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4337983B2 (ja) * | 2005-02-17 | 2009-09-30 | 国立大学法人 東京大学 | 混在型半導体集積回路及びその製造方法 |
| DE102005039804B4 (de) * | 2005-08-22 | 2009-07-09 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit Driftstrecke und Potentialverteilungsstruktur, Verwendung des Halbleiterbauelements sowie Verfahren zur Herstellung desselben |
| DE102006001922B3 (de) * | 2006-01-14 | 2007-05-03 | Infineon Technologies Austria Ag | Lateraler Leistungstransistor und Verfahren zu dessen Herstellung |
| JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| ES2393679T3 (es) * | 2007-04-19 | 2012-12-27 | Stryker Trauma Gmbh | Dispositivo para fracturas de cadera con cilindro y tapa de extremo para control de carga |
| EP2134279B1 (de) | 2007-04-19 | 2017-01-04 | Stryker European Holdings I, LLC | Hüftbruchvorrichtung mit statischem verschlussmechanismus mit kompressionsmöglichkeit |
| US8174071B2 (en) * | 2008-05-02 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage LDMOS transistor |
| CN101593774B (zh) * | 2009-06-10 | 2012-05-23 | 苏州博创集成电路设计有限公司 | P型绝缘体上硅的横向双扩散金属氧化物半导体晶体管 |
| CN101714552B (zh) * | 2009-11-09 | 2011-05-25 | 苏州博创集成电路设计有限公司 | 等离子显示驱动芯片用高低压器件及制备方法 |
| CN102142460B (zh) * | 2010-12-29 | 2013-10-02 | 电子科技大学 | 一种soi型p-ldmos |
| US8901676B2 (en) | 2011-01-03 | 2014-12-02 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs |
| US8299547B2 (en) * | 2011-01-03 | 2012-10-30 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates |
| US8680615B2 (en) | 2011-12-13 | 2014-03-25 | Freescale Semiconductor, Inc. | Customized shield plate for a field effect transistor |
| US8829570B2 (en) | 2012-03-09 | 2014-09-09 | Analog Devices, Inc. | Switching device for heterojunction integrated circuits and methods of forming the same |
| US9142625B2 (en) | 2012-10-12 | 2015-09-22 | Nxp B.V. | Field plate assisted resistance reduction in a semiconductor device |
| US9245960B2 (en) | 2013-02-08 | 2016-01-26 | Globalfoundries Inc. | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates |
| US9275991B2 (en) | 2013-02-13 | 2016-03-01 | Analog Devices, Inc. | Apparatus for transceiver signal isolation and voltage clamp |
| CN103762156A (zh) * | 2013-12-31 | 2014-04-30 | 上海新傲科技股份有限公司 | 半导体衬底的制作方法、半导体衬底以及高压晶体管 |
| US9673187B2 (en) | 2015-04-07 | 2017-06-06 | Analog Devices, Inc. | High speed interface protection apparatus |
| US9831233B2 (en) | 2016-04-29 | 2017-11-28 | Analog Devices Global | Apparatuses for communication systems transceiver interfaces |
| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| US10249609B2 (en) | 2017-08-10 | 2019-04-02 | Analog Devices, Inc. | Apparatuses for communication systems transceiver interfaces |
| US10700056B2 (en) | 2018-09-07 | 2020-06-30 | Analog Devices, Inc. | Apparatus for automotive and communication systems transceiver interfaces |
| US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0020164B1 (de) * | 1979-05-30 | 1983-05-11 | Xerox Corporation | Monolithische Matrix mit Hochspannungs-MOS-Transistoren |
| US5378912A (en) * | 1993-11-10 | 1995-01-03 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
| US6310378B1 (en) * | 1997-12-24 | 2001-10-30 | Philips Electronics North American Corporation | High voltage thin film transistor with improved on-state characteristics and method for making same |
| US6346451B1 (en) * | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
| US6028337A (en) * | 1998-11-06 | 2000-02-22 | Philips North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift region |
| KR100416589B1 (ko) * | 2001-01-06 | 2004-02-05 | 삼성전자주식회사 | 스위칭 특성을 개선하고 누설전류를 감소시키는 전하펌프회로 및 이를 구비하는 위상동기 루프 |
| JP4796238B2 (ja) * | 2001-04-27 | 2011-10-19 | Ｏｋｉセミコンダクタ株式会社 | ワード線駆動回路 |
| US6627958B2 (en) * | 2001-12-10 | 2003-09-30 | Koninklijke Philips Electronics N.V. | Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same |
-
2002
- 2002-05-21 US US10/152,235 patent/US6717214B2/en not_active Expired - Lifetime
-
2003
- 2003-05-20 WO PCT/IB2003/002142 patent/WO2003098690A2/en not_active Ceased
- 2003-05-20 AU AU2003228040A patent/AU2003228040A1/en not_active Abandoned
- 2003-05-20 AT AT03725509T patent/ATE510302T1/de not_active IP Right Cessation
- 2003-05-20 EP EP03725509A patent/EP1509955B1/de not_active Expired - Lifetime
- 2003-05-20 KR KR10-2004-7018551A patent/KR20040111631A/ko not_active Ceased
- 2003-05-20 CN CNB038115719A patent/CN100505305C/zh not_active Expired - Fee Related
- 2003-05-20 JP JP2004506084A patent/JP2005526400A/ja not_active Withdrawn
-
2004
- 2004-02-13 US US10/779,093 patent/US6833726B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20030218211A1 (en) | 2003-11-27 |
| US6717214B2 (en) | 2004-04-06 |
| WO2003098690A3 (en) | 2004-04-22 |
| WO2003098690A2 (en) | 2003-11-27 |
| US6833726B2 (en) | 2004-12-21 |
| US20040164351A1 (en) | 2004-08-26 |
| KR20040111631A (ko) | 2004-12-31 |
| AU2003228040A8 (en) | 2003-12-02 |
| JP2005526400A (ja) | 2005-09-02 |
| CN1864269A (zh) | 2006-11-15 |
| EP1509955A2 (de) | 2005-03-02 |
| CN100505305C (zh) | 2009-06-24 |
| EP1509955B1 (de) | 2011-05-18 |
| AU2003228040A1 (en) | 2003-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |