ATE511206T1 - Ladungsträgerteilchenstrahlsystem - Google Patents

Ladungsträgerteilchenstrahlsystem

Info

Publication number
ATE511206T1
ATE511206T1 AT05075600T AT05075600T ATE511206T1 AT E511206 T1 ATE511206 T1 AT E511206T1 AT 05075600 T AT05075600 T AT 05075600T AT 05075600 T AT05075600 T AT 05075600T AT E511206 T1 ATE511206 T1 AT E511206T1
Authority
AT
Austria
Prior art keywords
ion generator
beam system
particle beam
chamber
charge carrier
Prior art date
Application number
AT05075600T
Other languages
English (en)
Inventor
Diane K Stewart
Ralph W Knowles
Brian T Kimball
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34838899&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE511206(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE511206T1 publication Critical patent/ATE511206T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H01J2237/0045—Neutralising arrangements of objects being observed or treated using secondary electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31798—Problems associated with lithography detecting pattern defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
AT05075600T 2004-03-16 2005-03-11 Ladungsträgerteilchenstrahlsystem ATE511206T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/801,981 US6979822B1 (en) 2002-09-18 2004-03-16 Charged particle beam system

Publications (1)

Publication Number Publication Date
ATE511206T1 true ATE511206T1 (de) 2011-06-15

Family

ID=34838899

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05075600T ATE511206T1 (de) 2004-03-16 2005-03-11 Ladungsträgerteilchenstrahlsystem

Country Status (4)

Country Link
US (1) US6979822B1 (de)
EP (1) EP1577927B1 (de)
JP (1) JP5586118B2 (de)
AT (1) ATE511206T1 (de)

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JP5352262B2 (ja) 2009-02-06 2013-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US9113540B2 (en) 2010-02-19 2015-08-18 Gigaphoton Inc. System and method for generating extreme ultraviolet light
JP2012009497A (ja) * 2010-06-22 2012-01-12 Nippon Telegr & Teleph Corp <Ntt> 微小構造体の製造方法
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US9159530B2 (en) 2011-03-04 2015-10-13 Hitachi High-Technologies Corporation Electron microscope sample holder and sample observation method
US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
WO2014022429A1 (en) * 2012-07-30 2014-02-06 Fei Company Environmental sem gas injection system
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
US9478390B2 (en) 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US9715724B2 (en) 2014-07-29 2017-07-25 Applied Materials Israel Ltd. Registration of CAD data with SEM images
EP3249676B1 (de) 2016-05-27 2018-10-03 FEI Company Ladungsträgerteilchenmikroskop mit zwei geladenen teilchenstrahlen und in situ-abscheidungsfunktionalität
JP7094752B2 (ja) * 2018-03-29 2022-07-04 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射装置
CN111103316B (zh) * 2018-10-25 2021-05-25 中国科学院上海硅酸盐研究所 一种非导体陶瓷材料无荷电平衡电压的计算方法
US11995512B2 (en) 2018-11-13 2024-05-28 Atom Computing Inc. Scalable neutral atom based quantum computing
US10504033B1 (en) 2018-11-13 2019-12-10 Atom Computing Inc. Scalable neutral atom based quantum computing
US11580435B2 (en) 2018-11-13 2023-02-14 Atom Computing Inc. Scalable neutral atom based quantum computing
CN110505742B (zh) * 2019-08-22 2023-04-07 上海华力微电子有限公司 晶圆表面电荷消除装置及方法
CA3174448A1 (en) 2020-03-02 2021-09-10 Atom Computing Inc. Scalable neutral atom based quantum computing
JP7732994B2 (ja) 2020-03-02 2025-09-02 アトム コンピューティング インク． スケーラブルな中性原子ベースの量子コンピューティング
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US20240105421A1 (en) * 2022-09-22 2024-03-28 Applied Materials Israel Ltd. Enhanced deposition rate by applying a negative voltage to a gas injection nozzle in fib systems
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Also Published As

Publication number Publication date
EP1577927A3 (de) 2008-11-26
US20050279934A1 (en) 2005-12-22
EP1577927B1 (de) 2011-05-25
US6979822B1 (en) 2005-12-27
JP2005268224A (ja) 2005-09-29
JP5586118B2 (ja) 2014-09-10
EP1577927A2 (de) 2005-09-21

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