ATE515033T1 - Polymerspeicher mit ferroelektrischem polymer- speichermaterial mit zellengrössen, die asymmetrisch sind - Google Patents

Polymerspeicher mit ferroelektrischem polymer- speichermaterial mit zellengrössen, die asymmetrisch sind

Info

Publication number
ATE515033T1
ATE515033T1 AT04781827T AT04781827T ATE515033T1 AT E515033 T1 ATE515033 T1 AT E515033T1 AT 04781827 T AT04781827 T AT 04781827T AT 04781827 T AT04781827 T AT 04781827T AT E515033 T1 ATE515033 T1 AT E515033T1
Authority
AT
Austria
Prior art keywords
polymer memory
lines
asymmetric
distance
cell sizes
Prior art date
Application number
AT04781827T
Other languages
English (en)
Inventor
Mark Isenberger
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE515033T1 publication Critical patent/ATE515033T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
AT04781827T 2003-08-25 2004-08-20 Polymerspeicher mit ferroelektrischem polymer- speichermaterial mit zellengrössen, die asymmetrisch sind ATE515033T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/648,538 US7084446B2 (en) 2003-08-25 2003-08-25 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
PCT/US2004/027218 WO2005022549A1 (en) 2003-08-25 2004-08-20 A polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric

Publications (1)

Publication Number Publication Date
ATE515033T1 true ATE515033T1 (de) 2011-07-15

Family

ID=34216750

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04781827T ATE515033T1 (de) 2003-08-25 2004-08-20 Polymerspeicher mit ferroelektrischem polymer- speichermaterial mit zellengrössen, die asymmetrisch sind

Country Status (7)

Country Link
US (2) US7084446B2 (de)
EP (1) EP1661141B8 (de)
KR (1) KR100850083B1 (de)
CN (1) CN1839445B (de)
AT (1) ATE515033T1 (de)
TW (1) TWI281157B (de)
WO (1) WO2005022549A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050083455A1 (en) * 2003-10-16 2005-04-21 Chung David B. Spatially integrated display and memory system
KR101286718B1 (ko) * 2006-11-22 2013-07-16 서울시립대학교 산학협력단 메모리 장치
SG147341A1 (en) * 2007-05-03 2008-11-28 Sony Corp Multi-stack ferroelectric polymer memory device and method for manufacturing same
US10269804B2 (en) 2016-05-11 2019-04-23 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US20170338282A1 (en) * 2016-05-20 2017-11-23 Intel Corporation Memory module with unpatterned storage material

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2588732B2 (ja) * 1987-11-14 1997-03-12 富士通株式会社 半導体記憶装置
WO1992019564A1 (en) 1991-05-01 1992-11-12 The Regents Of The University Of California Amorphous ferroelectric materials
US5375085A (en) * 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
JP3368002B2 (ja) * 1993-08-31 2003-01-20 三菱電機株式会社 半導体記憶装置
CN1189919A (zh) * 1995-07-05 1998-08-05 西门子公司 制造只读存储器单元阵列的方法
US5969380A (en) 1996-06-07 1999-10-19 Micron Technology, Inc. Three dimensional ferroelectric memory
US6034882A (en) * 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
NO315728B1 (no) * 2000-03-22 2003-10-13 Thin Film Electronics Asa Multidimensjonal adresseringsarkitektur for elektroniske innretninger
US6356477B1 (en) * 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents
JP2003007982A (ja) * 2001-06-22 2003-01-10 Nec Corp 磁気記憶装置及び磁気記憶装置の設計方法
US6858862B2 (en) * 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
NO315959B1 (no) * 2002-04-16 2003-11-17 Thin Film Electronics Asa Fremgangsmåter til lagring av data i et ikke-flyktig minne
JP4539007B2 (ja) * 2002-05-09 2010-09-08 日本電気株式会社 半導体記憶装置
US7049153B2 (en) * 2003-04-23 2006-05-23 Micron Technology, Inc. Polymer-based ferroelectric memory
US7026670B2 (en) * 2003-04-30 2006-04-11 Intel Corporation Ferroelectric memory device with a conductive polymer layer and a method of formation

Also Published As

Publication number Publication date
KR100850083B1 (ko) 2008-08-04
US20060208297A1 (en) 2006-09-21
CN1839445A (zh) 2006-09-27
WO2005022549A1 (en) 2005-03-10
EP1661141B8 (de) 2011-09-21
US20050045930A1 (en) 2005-03-03
EP1661141B1 (de) 2011-06-29
EP1661141A1 (de) 2006-05-31
TW200523926A (en) 2005-07-16
US7407819B2 (en) 2008-08-05
US7084446B2 (en) 2006-08-01
TWI281157B (en) 2007-05-11
KR20060056999A (ko) 2006-05-25
CN1839445B (zh) 2013-09-18

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