ATE515771T1 - Verfahren zur nichtrealen zeitprogrammierung eines nichtflüchtigen speichers zum erreichen einer festeren verteilung von schwellenspannungen - Google Patents

Verfahren zur nichtrealen zeitprogrammierung eines nichtflüchtigen speichers zum erreichen einer festeren verteilung von schwellenspannungen

Info

Publication number
ATE515771T1
ATE515771T1 AT07797758T AT07797758T ATE515771T1 AT E515771 T1 ATE515771 T1 AT E515771T1 AT 07797758 T AT07797758 T AT 07797758T AT 07797758 T AT07797758 T AT 07797758T AT E515771 T1 ATE515771 T1 AT E515771T1
Authority
AT
Austria
Prior art keywords
reprogramming
real time
read
achieve
volatile memory
Prior art date
Application number
AT07797758T
Other languages
English (en)
Inventor
Nima Mokhlesi
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/425,794 external-priority patent/US7489549B2/en
Priority claimed from US11/425,790 external-priority patent/US7486561B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE515771T1 publication Critical patent/ATE515771T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
AT07797758T 2006-06-22 2007-05-25 Verfahren zur nichtrealen zeitprogrammierung eines nichtflüchtigen speichers zum erreichen einer festeren verteilung von schwellenspannungen ATE515771T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/425,794 US7489549B2 (en) 2006-06-22 2006-06-22 System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
US11/425,790 US7486561B2 (en) 2006-06-22 2006-06-22 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
PCT/US2007/069711 WO2007149677A2 (en) 2006-06-22 2007-05-25 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages

Publications (1)

Publication Number Publication Date
ATE515771T1 true ATE515771T1 (de) 2011-07-15

Family

ID=38834212

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07797758T ATE515771T1 (de) 2006-06-22 2007-05-25 Verfahren zur nichtrealen zeitprogrammierung eines nichtflüchtigen speichers zum erreichen einer festeren verteilung von schwellenspannungen

Country Status (6)

Country Link
EP (1) EP2030205B1 (de)
JP (1) JP4994447B2 (de)
KR (1) KR101075253B1 (de)
AT (1) ATE515771T1 (de)
TW (1) TWI337746B (de)
WO (1) WO2007149677A2 (de)

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* Cited by examiner, † Cited by third party
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ITRM20080114A1 (it) * 2008-02-29 2009-09-01 Micron Technology Inc Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria.
US7924614B2 (en) 2009-01-19 2011-04-12 Macronix International Co., Ltd. Memory and boundary searching method thereof
US8504759B2 (en) * 2009-05-26 2013-08-06 Micron Technology, Inc. Method and devices for controlling power loss
JP2011159364A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置の駆動方法
JP2011198419A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 不揮発性半導体記憶装置およびその書き込み方法
KR20110126408A (ko) 2010-05-17 2011-11-23 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법
JP2012190523A (ja) 2011-03-14 2012-10-04 Toshiba Corp 不揮発性半導体記憶装置
US9092320B2 (en) 2012-10-15 2015-07-28 Hitachi, Ltd. Storage system which includes non-volatile semiconductor storage medium, and storage control method of storage system
US9257203B2 (en) 2012-12-06 2016-02-09 Micron Technology, Inc. Setting a default read signal based on error correction
KR102175039B1 (ko) * 2013-06-25 2020-11-05 삼성전자주식회사 불휘발성 메모리 장치의 데이터 기입 방법
KR20160032910A (ko) 2014-09-17 2016-03-25 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
JP6453718B2 (ja) * 2015-06-12 2019-01-16 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
US10460816B2 (en) 2017-12-08 2019-10-29 Sandisk Technologies Llc Systems and methods for high-performance write operations
FR3163658A1 (fr) 2024-06-24 2025-12-26 IFP Energies Nouvelles Injection d’hydrogène produit par électrolyse de l’eau sur une unité de production de biocarburants obtenus par conversion thermochimique de biomasse lignocellulosique avec valorisation du CO2 par réaction du gaz à l’eau inverse.
FR3163657A1 (fr) 2024-06-24 2025-12-26 IFP Energies Nouvelles Injection d’hydrogène produit par électrolyse de l’eau sur une unité de production de carburants durables obtenus par conversion thermochimique d’une charge plastique carbonée avec valorisation du CO2 par réaction du gaz à l’eau inverse.

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
KR100257868B1 (ko) * 1997-12-29 2000-06-01 윤종용 노어형 플래시 메모리 장치의 소거 방법
JP3957985B2 (ja) * 2001-03-06 2007-08-15 株式会社東芝 不揮発性半導体記憶装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
JP3863485B2 (ja) * 2002-11-29 2006-12-27 株式会社東芝 不揮発性半導体記憶装置
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
US7212436B2 (en) * 2005-02-28 2007-05-01 Micron Technology, Inc. Multiple level programming in a non-volatile memory device

Also Published As

Publication number Publication date
JP4994447B2 (ja) 2012-08-08
WO2007149677A3 (en) 2008-05-22
WO2007149677A2 (en) 2007-12-27
TWI337746B (en) 2011-02-21
TW200814084A (en) 2008-03-16
EP2030205A2 (de) 2009-03-04
KR101075253B1 (ko) 2011-10-20
JP2009541909A (ja) 2009-11-26
KR20090007298A (ko) 2009-01-16
EP2030205B1 (de) 2011-07-06

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