ATE515801T1 - Ladungsträger-extraktions-transistor - Google Patents

Ladungsträger-extraktions-transistor

Info

Publication number
ATE515801T1
ATE515801T1 AT01925702T AT01925702T ATE515801T1 AT E515801 T1 ATE515801 T1 AT E515801T1 AT 01925702 T AT01925702 T AT 01925702T AT 01925702 T AT01925702 T AT 01925702T AT E515801 T1 ATE515801 T1 AT E515801T1
Authority
AT
Austria
Prior art keywords
quantum well
layer
source
inalsb
substrate
Prior art date
Application number
AT01925702T
Other languages
English (en)
Inventor
Timothy Jonathan Phillips
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE515801T1 publication Critical patent/ATE515801T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4735—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having delta-doped or planar-doped donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT01925702T 2000-05-19 2001-05-02 Ladungsträger-extraktions-transistor ATE515801T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0012017A GB2362506A (en) 2000-05-19 2000-05-19 Field effect transistor with an InSb quantum well and minority carrier extraction
PCT/GB2001/001919 WO2001088995A1 (en) 2000-05-19 2001-05-02 Charge carrier extracting transistor

Publications (1)

Publication Number Publication Date
ATE515801T1 true ATE515801T1 (de) 2011-07-15

Family

ID=9891857

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01925702T ATE515801T1 (de) 2000-05-19 2001-05-02 Ladungsträger-extraktions-transistor

Country Status (10)

Country Link
US (1) US6770902B2 (de)
EP (1) EP1282918B1 (de)
JP (1) JP4972267B2 (de)
KR (1) KR100801955B1 (de)
CN (1) CN1220272C (de)
AT (1) ATE515801T1 (de)
AU (1) AU5238601A (de)
CA (1) CA2406642C (de)
GB (1) GB2362506A (de)
WO (1) WO2001088995A1 (de)

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* Cited by examiner, † Cited by third party
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GB0206572D0 (en) * 2002-03-20 2002-05-01 Qinetiq Ltd Field effect transistors
US6825506B2 (en) 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
US6995473B2 (en) * 2002-12-19 2006-02-07 Matsushita Electric Industrial Co., Ltd. Stacked semiconductor transistors
JP4469139B2 (ja) * 2003-04-28 2010-05-26 シャープ株式会社 化合物半導体ｆｅｔ
GB0326993D0 (en) * 2003-11-20 2003-12-24 Qinetiq Ltd Strained semiconductor devices
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US20060148182A1 (en) * 2005-01-03 2006-07-06 Suman Datta Quantum well transistor using high dielectric constant dielectric layer
CN101361189B (zh) * 2005-01-25 2011-02-16 莫克斯托尼克斯股份有限公司 高性能fet器件和方法
JP4474292B2 (ja) * 2005-01-28 2010-06-02 トヨタ自動車株式会社 半導体装置
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
WO2006130665A2 (en) * 2005-05-31 2006-12-07 Mears Technologies, Inc. Microelectromechanical systems (mems) device including a superlattice and associated methods
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US9024298B2 (en) * 2005-07-26 2015-05-05 Xerox Corporation Encapsulation layer for electronic devices
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7485503B2 (en) * 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same
US8143646B2 (en) * 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7429747B2 (en) * 2006-11-16 2008-09-30 Intel Corporation Sb-based CMOS devices
US8030664B2 (en) 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US7713803B2 (en) * 2007-03-29 2010-05-11 Intel Corporation Mechanism for forming a remote delta doping layer of a quantum well structure
US20090218563A1 (en) * 2008-02-28 2009-09-03 Bruce Alvin Gurney Novel fabrication of semiconductor quantum well heterostructure devices
US8362566B2 (en) * 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
WO2010074964A2 (en) * 2008-12-23 2010-07-01 Intel Corporation Group iii-v mosfet having metal diffusion regions
US8093584B2 (en) * 2008-12-23 2012-01-10 Intel Corporation Self-aligned replacement metal gate process for QWFET devices
GB2469448A (en) * 2009-04-14 2010-10-20 Qinetiq Ltd Strain Control in Semiconductor Devices
KR20120081072A (ko) * 2009-09-07 2012-07-18 스미또모 가가꾸 가부시키가이샤 전계 효과 트랜지스터, 반도체 기판, 전계 효과 트랜지스터의 제조 방법, 및 반도체 기판의 제조 방법
US8324661B2 (en) * 2009-12-23 2012-12-04 Intel Corporation Quantum well transistors with remote counter doping
CN102194859B (zh) * 2010-03-05 2013-05-01 中国科学院微电子研究所 高迁移率ⅲ-ⅴ族半导体mos界面结构
CN101995235B (zh) * 2010-10-21 2012-07-18 天津大学 一种基于微波二极管的动态应变测量装置
CN101982731B (zh) * 2010-10-21 2012-05-23 天津大学 一种柔性薄膜微波应变传感器
US8891573B2 (en) 2012-05-14 2014-11-18 Arizona Board Of Regents 6.1 angstrom III-V and II-VI semiconductor platform
CN107968679B (zh) * 2017-11-20 2021-11-05 南京艾凯特光电科技有限公司 可见光通信装置

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GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
US4860064A (en) * 1987-10-21 1989-08-22 American Telephone And Telegraph Company At&T Bell Laboratories Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
JP3298637B2 (ja) * 1990-11-30 2002-07-02 横河電機株式会社 Ａｂ効果素子を用いたａ／ｄ変換器
GB9100351D0 (en) 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device
JPH04372137A (ja) * 1991-06-21 1992-12-25 Nec Corp 電界効果トランジスタ
GB2331841A (en) 1997-11-28 1999-06-02 Secr Defence Field effect transistor

Also Published As

Publication number Publication date
HK1055352A1 (en) 2004-01-02
KR20030034072A (ko) 2003-05-01
JP4972267B2 (ja) 2012-07-11
CA2406642A1 (en) 2001-11-22
EP1282918B1 (de) 2011-07-06
KR100801955B1 (ko) 2008-02-12
US6770902B2 (en) 2004-08-03
US20030080332A1 (en) 2003-05-01
WO2001088995A1 (en) 2001-11-22
CA2406642C (en) 2012-12-18
EP1282918A1 (de) 2003-02-12
GB0012017D0 (en) 2000-07-05
AU5238601A (en) 2001-11-26
JP2003533887A (ja) 2003-11-11
CN1220272C (zh) 2005-09-21
CN1429408A (zh) 2003-07-09
GB2362506A (en) 2001-11-21

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